208297 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds further characterised by the doping material
Crystalline oxide semiconductor film and semiconductor device
#2OXYGEN GETTERS FOR ACTIVATION OF GROUP V DOPANTS IN II-VI SEMICONDUCTOR MATERIALS
#3Crystalline oxide semiconductor film and semiconductor device
#4Source and drain formation using self-aligned processes
#5TWO-DIMENSIONAL ELECTRONIC DEVICES AND RELATED FABRICATION METHODS
#6ACTIVE SWITCH ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND DISPLAY PANEL USING THE SAME
#7Hemt having heavily doped N-type regions and process of forming the same
#8Array substrate for thin-film transistor and display device of the same
#9SOI substrate and manufacturing method thereof
#10SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF
#11Method for manufacturing transistor according to selective printing of dopant
#12Oxide thin film transistor, array substrate and display device
#13Reduction of defect induced leakage in III-V semiconductor devices
#14HEMT HAVING HEAVILY DOPED N-TYPE REGIONS AND PROCESS OF FORMING THE SAME
#15Doped zinc oxide as n+ layer for semiconductor devices
#16Thermal doping by vacancy formation in nanocrystals
#17Quantum rod and method of fabricating the same
#18P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure
#19Semiconductor device and manufacturing method thereof
#20Crystals of semiconductor material having a tuned band gap energy and method for preparation thereof
#21P-TYPE DOPING OF II-VI MATERIALS WITH RAPID VAPOR DEPOSITION USING RADICAL NITROGEN
#22Quantum rod and method of fabricating the same
#23Heavily doped semiconductor nanoparticles
#24Method of manufacturing P-type ZnO nanowires and method of manufacturing energy conversion device
#25N-type doping of zinc telluride
#26N-TYPE DOPING OF ZINC TELLURIDE
#27II-VI core-shell semiconductor nanowires
#28Bipolar transistor structure and method including emitter-base interface impurity
#29Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate, substrates obtained, and electronic, electro-optic or optoelectronic devices comprising them
#30LOW-TEMPERATURE SURFACE DOPING/ALLOYING/COATING OF LARGE SCALE SEMICONDUCTOR NANOWIRE ARRAYS
#31Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device
#32Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal
#33Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device
#34Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device
#35Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device
#36Copper Doped Magnetic Semiconductors
#37Manganese Doped Magnetic Semiconductors
#38Electronic devices formed of high-purity molybdenum oxide
#39P-type group II-VI semiconductor compounds
#40Molecular-doped transistor and sensor
#41Source and drain formation using self-aligned processes