ClassID:

208303

H01L29/263 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , , e.g. alloys Amorphous materials

Recent Application in this class:
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20250006807
2025-01-02

SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER

#2
20240421231
2024-12-19

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

#3
20240290843
2024-08-29

SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SEMICONDUCTOR ELEMENT

#4
20230387225
2023-11-30

Semiconductor structure with wraparound backside amorphous layer

#5
20230352596
2023-11-02

METHOD FOR MANUFACTURING TELLURIUM-BASED SEMICONDUCTOR DEVICE, TELLURIUM-BASED SEMICONDUCTOR DEVICE MANUFACTURED THEREBY, AND THIN FILM TRANSISTOR

#6
20230299207
2023-09-21

Semiconductor device comprising silicon and oxide semiconductor in channel formation region

#7
20230126031
2023-04-27

FDSOI device structure and preparation method thereof

#8
20220384590
2022-12-01

Semiconductor structure with wraparound backside amorphous layer

#9
20220301869
2022-09-22

Semiconductor memory device and method of manufacturing the same

#10
20220093799
2022-03-24

FDSOI device structure and preparation method thereof

#11
20220069089
2022-03-03

Silicon carbide semiconductor device

#12
20210202746
2021-07-01

Semiconductor device comprising oxide semiconductor with c-axis-aligned crystals

#13
20210151564
2021-05-20

Leakage-free implantation-free ETSOI transistors

#14
20210135013
2021-05-06

Semiconductor device provided with oxide semiconductor TFT

#15
20200212222
2020-07-02

Semiconductor device

#16
20200006385
2020-01-02

Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizes

#17
20190348505
2019-11-14

Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target

#18
20190172952
2019-06-06

Semiconductor device

#19
20190019893
2019-01-17

ARRAY SUBSTRATE, MANUFACTURING METHOD, AND LCD PANEL

#20
20180166580
2018-06-14

Method for manufacturing semiconductor device and method for manufacturing liquid crystal display panel

#21
20180040741
2018-02-08

Method for manufacturing semiconductor device

#22
20170317171
2017-11-02

Leakage-free implantation-free ETSOI transistors

#23
20170213832
2017-07-27

Semiconductor device including write access transistor whose oxide semiconductor layer including channel formation region

#24
20170179304
2017-06-22

Leakage-free implantation-free ETSOI transistors

#25
20170110546
2017-04-20

Reduction of defect induced leakage in III-V semiconductor devices

#26
20170033177
2017-02-02

Leakage-free implantation-free ETSOI transistors

#27
20170012133
2017-01-12

Oxide semiconductor film including indium, tungsten and zinc and thin film transistor device

#28
20160372608
2016-12-22

Method for manufacturing semiconductor device

#29
20160336457
2016-11-17

Semiconductor device

#30
20160336408
2016-11-17

Reduction of defect induced leakage in III-V semiconductor devices

#31
20160163871
2016-06-09

Semiconductor device and manufacturing method thereof

#32
20160163839
2016-06-09

Semiconductor device and method for manufacturing the same

#33
20160079438
2016-03-17

Method for manufacturing semiconductor device

#34
20150279841
2015-10-01

Semiconductor device including write access transistor having channel region including oxide semiconductor

#35
20150214381
2015-07-30

Semiconductor device

#36
20150177311
2015-06-25

Methods and Systems for Evaluating IGZO with Respect to NBIS

#37
20150171227
2015-06-18

IGZO devices with composite channel layers and methods for forming the same

#38
20150103977
2015-04-16

Method of producing thin film transistor, thin film transistor, display device, image sensor, and X-ray sensor

#39
20150014679
2015-01-15

Semiconductor device

#40
20140346501
2014-11-27

Semiconductor device

#41
20140231800
2014-08-21

Method for manufacturing semiconductor device

#42
20140169100
2014-06-19

Method for driving semiconductor device

#43
20140117348
2014-05-01

Active-matrix Panel Display Device, TFT and Method for Forming the Same

#44
20140103339
2014-04-17

Semiconductor device and method for manufacturing the same

#45
20140084283
2014-03-27

Thin film transistor and method for manufacturing the same

#46
20140048801
2014-02-20

Semiconductor device and manufacturing method thereof

#47
20130313548
2013-11-28

Oxide semiconductor field effect transistor and method for manufacturing the same

#48
20130146870
2013-06-13

Method for manufacturing semiconductor device

#49
20130140558
2013-06-06

Semiconductor memory device with transistor having oxide semiconductor channel formation region

#50
20130140557
2013-06-06

Method for manufacturing semiconductor device

#51
20130126862
2013-05-23

Method for manufacturing semiconductor device

#52
20120273858
2012-11-01

Semiconductor memory device

#53
20120168910
2012-07-05

Multi-nary group IB and VIA based semiconductor

#54
20120112184
2012-05-10

Semiconductor device and manufacturing method thereof

#55
20110263085
2011-10-27

Method for manufacturing semiconductor device

#56
20110134683
2011-06-09

Semiconductor device

#57
20110127523
2011-06-02

Semiconductor device

#58
20100276688
2010-11-04

Oxide semiconductor field effect transistor and method for manufacturing the same

#59
20100035379
2010-02-11

Method for manufacturing semiconductor device

#60
20050196975
2005-09-08

Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal

#61
14814142
2017-01-03

MOSFET with ultra low drain leakage