Patents-Review.com
ClassID:

208305 ⎘

H01L29/30 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface

Sub-classes:
Recent Application in this class:
#1
20240426025
2024-12-26

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

 #2
20240183074
2024-06-06

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

 #3
20240133076
2024-04-25

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

 #4
20240063272
2024-02-22

SEMICONDUCTOR STRUCTURE WITH ROUGHENED SIDEWALL AND METHOD OF MANUFACTURING THEREOF

 #5
20230407522
2023-12-21

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

 #6
20220112623
2022-04-14

Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot

 #7
20220025543
2022-01-27

Silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot

 #8
20220025542
2022-01-27

Silicon carbide seed crystal and method of manufacturing silicon carbide ingot

 #9
20210327886
2021-10-21

Semiconductor device having a programming element

 #10
20200263321
2020-08-20

Oxygen-doped group III metal nitride and method of manufacture

 #11
20200227268
2020-07-16

Indium phosphide wafer having pits on the back side, method and etching solution for manufacturing the same

 #12
20200190696
2020-06-18

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

 #13
20200105912
2020-04-02

Skyrmion diode and method of manufacturing the same

 #14
20180195206
2018-07-12

Oxygen-doped group III metal nitride and method of manufacture

 #15
20180182630
2018-06-28

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

 #16
20180151379
2018-05-31

ELECTRODES FOR LOCALIZED CONTROL FACILITATING THE INTEGRATION OF POROUS SILICON FORMED BY GALVANIC ETCHING

 #17
20180118568
2018-05-03

SYSTEMS AND METHODS FOR GROWING A NON-PHASE SEPARATED GROUP-III NITRIDE SEMICONDUCTOR ALLOY

 #18
20170263633
2017-09-14

Semiconductor device and method for manufacturing same

 #19
20170263501
2017-09-14

ELEMENT CHIP AND METHOD FOR MANUFACTURING THE SAME

 #20
20170256633
2017-09-07

Skyrmion diode and method of manufacturing the same

 #21
20170243781
2017-08-24

Process flow for manufacturing semiconductor on insulator structures in parallel

 #22
20170194137
2017-07-06

Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber

 #23
20170178891
2017-06-22

Methods for improving wafer planarity and bonded wafer assemblies made from the methods

 #24
20170077237
2017-03-16

Semiconductor device

 #25
20160322496
2016-11-03

Semiconductor device and method of forming the same

 #26
20160160388
2016-06-09

SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR

 #27
20160043182
2016-02-11

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS

 #28
20160009556
2016-01-14

Systems and methods for growing a non-phase separated group-III nitride semiconductor alloy

 #29
20150371966
2015-12-24

Semiconductor device having a device fixed on a substrate with an adhesive

 #30
20150041861
2015-02-12

III-N device structures and methods

 #31
20140264765
2014-09-18

Semiconductor wafer and method of producing same

 #32
20140126165
2014-05-08

Packaged nano-structured component and method of making a packaged nano-structured component

 #33
20140117380
2014-05-01

Flat SiC semiconductor substrate

 #34
20140103492
2014-04-17

Silicon wafer and method for producing the same

 #35
20140027787
2014-01-30

SiC single crystal, SiC wafer, and semiconductor device

 #36
20140015105
2014-01-16

Semiconductor device and manufacturing method therefor

 #37
20130334667
2013-12-19

Alkaline Etching Liquid for Texturing a Silicon Wafer Surface

 #38
20130320357
2013-12-05

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME

 #39
20130264690
2013-10-10

Method of producing epitaxial wafer and the epitaxial wafer having a highly flat rear surface

 #40
20130193545
2013-08-01

SEMICONDUCTOR APPARATUS AND IMAGE SENSOR PACKAGE USING THE SAME

 #41
20130154059
2013-06-20

Semiconductor device manufacturing method and semiconductor device

 #42
20130075867
2013-03-28

Group III nitride crystal substrate

 #43
20130032814
2013-02-07

Method and system for formation of P-N junctions in gallium nitride based electronics

 #44
20120193677
2012-08-02

III-N device structures and methods

 #45
20120112321
2012-05-10

ALKALINE ETCHING LIQUID FOR TEXTURING A SILICON WAFER SURFACE

 #46
20110121206
2011-05-26

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

 #47
20100248478
2010-09-30

Method of processing a surface of group III nitride crystal and group III nitride crystal substrate

 #48
20100025821
2010-02-04

Ion implanting apparatus and ion implanting method

 #49
20090014842
2009-01-15

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

 #50
20080296588
2008-12-04

Method of treating substrate

 #51
20070254401
2007-11-01

Method of processing a surface of group III nitride crystal and group III nitride crystal substrate

 #52
20060079062
2006-04-13

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

 #53
14312910
2015-11-24

Metal oxide semiconductor field effect transistor with reduced surface field folding