208309 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material Planar doping, e.g. atomic-plane doping, delta-doping
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
#2SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#3SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer preliminary class
#4SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#5SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
#6METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
#7Semiconductor device and method for manufacturing the same
#8Semiconductor device
#9Solar cell and solar cell module
#10Semiconductor device
#11Silicon carbide semiconductor substrate
#12P-N junction based devices with single species impurity for P-type and N-type doping
#13Tipless transistors, short-tip transistors, and methods and circuits therefor
#14Nitride semiconductor substrate, semiconductor device, and method for manufacturing nitride semiconductor substrate
#15Enhancement-mode device and method for manufacturing the same
#16Method for producing nitride crystal and nitride crystal
#17P-N junction based devices with single species impurity for P-type and N-type doping
#18METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A DOPING SPIKE
#19Method for manufacturing semiconductor structure
#20Nanotube semiconductor devices
#21Methods for fabricating III-nitride tunnel junction devices
#22Semiconductor device
#23Semiconductor device and method for manufacturing the same
#24High electron mobility transistor devices and method for fabricating the same
#25High electron mobility transistor devices
#26Termination structure for nanotube semiconductor devices
#27Semiconductor structure and manufacturing method thereof
#28III-nitride tunnel junction with modified P-N interface
#29Ga2O3 SEMICONDUCTOR ELEMENT
#30Semiconductor heterostructures and methods for forming same
#31Secured electronic chip
#32Tipless transistors, short-tip transistors, and methods and circuits therefor
#33Epitaxial silicon wafer
#34Quantum doping method and use in fabrication of nanoscale electronic devices
#35Diamond based current aperture vertical transistor and methods of making and using the same
#36Semiconductor device having high linearity-transconductance
#37Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate
#38Methods of forming a bipolar transistor having a collector with a doping spike
#39NANOSCALE WIRES WITH TIP-LOCALIZED JUNCTIONS
#40GaO-based crystal film, and crystal multilayer structure
#41Semiconductor devices with germanium-rich active layers and doped transition layers
#42COMPACT MEMORY STRUCTURE INCLUDING TUNNELING DIODE
#43III-N material structure for gate-recessed transistors
#44Partially biased isolation in semiconductor devices
#45Method for producing nitride crystal and nitride crystal
#46Semiconductor devices with germanium-rich active layers and doped transition layers
#47Semiconductor device and semiconductor device manufacturing method
#48Bipolar transistor having collector with doping spike
#49Semiconductor device using diamond
#50Enhancement mode III-N HEMTs
#51Transistor with threshold voltage set notch and method of fabrication thereof
#52GaO-based semiconductor element
#53FinFETs having strained channels, and methods of fabricating finFETs having strained channels
#54System and method for substrate wafer back side and edge cross section seals
#55FIELD-EFFECT COMPOUND SEMICONDUCTOR DEVICE
#56Nitride semiconductor element and nitride semiconductor wafer
#57Deposited material and method of formation
#58Layered structure of a P-TFET
#59Enhancement mode III-N HEMTs
#60Semiconductor devices with germanium-rich active layers and doped transition layers
#61Transistor design
#62Integrated circuit structure and method with solid phase diffusion
#63High-mobility semiconductor heterostructures
#64Source/drain profile engineering for enhanced p-MOSFET
#65Compact memory structure including tunneling diode
#66NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
#67Contacts for transistors
#68Bipolar transistor having collector with doping spike
#69Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
#70Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel
#71Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material
#72Forming arsenide-based complementary logic on a single substrate
#73Transistor design
#74Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
#75Semiconductor device and method for manufacturing the same
#76Field effect semiconductor device
#77III-V device with overlapped extension regions using replacement gate
#78Nanotube semiconductor devices
#79Semiconductor component
#80Strained InGaAs quantum wells for complementary transistors
#81Enhancement mode III-N HEMTs
#82Transistor with threshold voltage set notch and method of fabrication thereof
#83GaOsemiconductor element
#84METHOD OF FABRICATING A SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND APPARATUS FOR FABRICATING A SEMICONDUCTOR DEVICE
#85Nitride-based semiconductor device and manufacturing method thereof
#86Semiconductor structure and method
#87Apparatus and methods for improving parallel conduction in a quantum well device
#88Heavily doped semiconductor nanoparticles
#89Bipolar transistor having collector with doping spike
#90GROUP III NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR
#91SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#92Method for producing nitride crystal and nitride crystal
#93Deposited material and method of formation
#94Variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
#95Fabrication of field-effect transistors with atomic layer doping
#96FinFET field-effect transistors with atomic layer doping
#97Nanotube semiconductor devices and nanotube termination structures
#98Apparatus and methods for improving parallel conduction in a quantum well device
#99POWER SEMICONDUCTOR DEVICE
#100Apparatus and methods for improving parallel conduction in a quantum well device
#101Transistor with threshold voltage set notch and method of fabrication thereof
#102Surface passivation by quantum exclusion using multiple layers
#103Nitride semiconductor device and method for fabricating the same
#104Semiconductor device and method of manufacturing the same
#105Methods and apparatus for antimonide-based backward diode millimeter-wave detectors
#106Remote Doped High Performance Transistor Having Improved Subthreshold Characteristics
#107System and method for substrate wafer back side and edge cross section seals
#108Nanotube semiconductor devices
#109Apparatus and methods for improving parallel conduction in a quantum well device
#110Group III-V devices with delta-doped layer under channel region
#111Boron aluminum nitride diamond heterostructure
#112Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures
#113Enhancement mode III-N HEMTs
#114Semiconductor transistor with P type re-grown channel layer
#115Semiconductor device and method for fabricating the same
#116Power rectifiers and method of making same
#117Method for dopant calibration of delta doped multilayered structure
#118Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependence
#119High efficiency rectifier
#120Forming arsenide-based complementary logic on a single substrate
#121Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures
#122Boron aluminum nitride diamond heterostructure
#123Bipolar transistor and method of manufacturing the same
#124High-breakdown-voltage insulated gate semiconductor device
#125Silicon-based backward diodes for zero-biased square law detection and detector arrays of same
#126High-breakdown-voltage insulated gate semiconductor device
#127Field effect transistor having nitride semiconductor layer
#128Semiconductor device and method for manufacturing same
#129Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
#130Semiconductor device and method for fabricating the same
#131Gallium nitride electromagnetic pulse arrestor
#132P-N junction based devices with single species impurity for P-type and N-type doping
#133Tipless transistors, short-tip transistors, and methods and circuits therefor
#134Quantum doping method and use in fabrication of nanoscale electronic devices