208314 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Resistive arrangements, e.g. resistive or semi-insulating field plates
FIELD-PLATED RESISTOR
#2SEMICONDUCTOR DEVICE
#3QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES
#4Power semiconductor device and manufacturing method thereof
#5Semiconductor device
#6SEMICONDUCTOR DEVICE
#7Semiconductor device including an isolation region having an edge being covered and manufacturing method for the same
#8MOS DEVICE WITH RESISTIVE FIELD PLATE FOR REALIZING CONDUCTANCE MODULATION FIELD EFFECT AND PREPARATION METHOD THEREOF
#9HIGH VOLTAGE RESISTOR WITH HIGH VOLTAGE JUNCTION TERMINATION
#10SHARED-DIELECTRIC MOSFET DEVICE WITH RESISTIVE-FIELD-PLATE AND PREPARATION METHOD THEREOF
#11Semiconductor device
#12TERMINATION STRUCTURE OF SUPER-JUNCTION POWER DEVICE
#13Diode and Power Circuit
#14SEMICONDUCTOR DEVICE
#15SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#16SEMICONDUCTOR DEVICES HAVING GATE RESISTORS WITH LOW VARIATION IN RESISTANCE VALUES
#17SEMICONDUCTOR UNIT, SEMICONDUCTOR MODULE, AND ELECTRONIC APPARATUS
#18SEMICONDUCTOR DEVICE
#19SEMICONDUCTOR DEVICE
#20SEMICONDUCTOR DIE INCLUDING A DEVICE
#21Semiconductor device including an isolation region having an edge being covered and manufacturing method for the same
#22Semiconductor device
#23Semiconductor device
#24Semiconductor devices having gate resistors with low variation in resistance values
#25Bidirectional switches with active substrate biasing
#26SEMICONDUCTOR DEVICE
#27Transistor having resistive field plate
#28Semiconductor device with insulated gate transistor cell and rectifying junction
#29Semiconductor device
#30SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#31Semiconductor device
#32Series resistor over drain region in high voltage device
#33Transistor device with a field electrode that includes two layers
#34HIGH-VOLTAGE N-CHANNEL HEMT DEVICE
#35Semiconductor device
#36High voltage resistor with high voltage junction termination
#37Semiconductor device
#38Method for manufacturing compound semiconductor device
#39Transistor device with a field electrode that includes two layers
#40Vertical resistor adjacent inactive gate over trench isolation
#41Transistors with ion- or fixed charge-based field plate structures
#42Oxide semiconductor device and method of manufacturing oxide semiconductor device
#43Semiconductor device and method of manufacturing the same
#44Cellular insulated gate power device with edge design to prevent failure near edge
#45Series resistor over drain region in high voltage device
#46Series resistor over drain region in high voltage device
#47Semiconductor device and electronic apparatus
#48Power semiconductor device having different channel regions
#49Vertical gallium nitride Schottky diode
#50Semiconductor device
#51Power semiconductor device with optimized field-plate design
#52Complementary metal-oxide-semiconductor (CMOS) voltage-controlled resistor
#53Superjunction transistor arrangement and method of producing thereof
#54Semiconductor structure having field plate and associated fabricating method
#55Transistor device with a field electrode that includes two layers
#56Method for forming a lateral super-junction MOSFET device and termination structure
#57Power semiconductor device having a field electrode
#58High voltage termination structure of a power semiconductor device
#59Enclosed gate runner for eliminating miller turn-on
#60Semiconductor device and manufacturing method thereof
#61Semiconductor device
#62Semiconductor device, starter circuit, and switched-mode power-supply circuit
#63High-voltage LDMOSFET devices having polysilicon trench-type guard rings
#64Enclosed gate runner for eliminating miller turn-on
#65Semiconductor cell structure and power semiconductor device
#66Insulated gate bipolar transistor (IGBT) with high avalanche withstand
#67Power semiconductor device having different channel regions
#68FIELD EFFECT TRANSISTOR WHICH CAN BE BIASED TO ACHIEVE A UNIFORM DEPLETION REGION
#69Semiconductor device
#70Termination structure for gallium nitride Schottky diode including junction barriar diodes
#71Lateral insulated gate bipolar transistor and method of eliminating the transistor tail current
#72Semiconductor device
#73Method for forming a lateral super-junction MOSFET device and termination structure
#74Series resistor over drain region in high voltage device
#75Semiconductor device
#76Field effect transistor which can be biased to achieve a uniform depletion region
#77Semiconductor device including trenches formed in transistor or diode portions
#78Power semiconductor device termination structure
#79High voltage termination structure of a power semiconductor device
#80Power MOSFET with metal filled deep sinker contact for CSP
#81Semiconductor device and power control device
#82Transistor device with a field electrode that includes two layers
#83Trench Edge Termination Structure for Power Semiconductor Devices
#84Power semiconductor device having a field electrode
#85Manufacturing method of semiconductor device having a voltage resistant structure
#86Lateral super-junction MOSFET device and termination structure
#87High-voltage semiconductor devices
#88Semiconductor device
#89Termination structure for gallium nitride Schottky diode
#90High voltage integrated circuit with high voltage junction termination region
#91Semiconductor structure having field plate and associated fabricating method
#92Semiconductor device and method of manufacturing same
#93Lateral power integrated devices having low on-resistance
#94Method of forming a semiconductor structure having integrated snubber resistance
#95Semiconductor device including a heat sink structure
#96Semiconductor device
#97HIGH VOLTAGE DMOS AND THE METHOD FOR FORMING THEREOF
#98Semiconductor device
#99Semiconductor device having a voltage resistant structure
#100Switching device
#101Semiconductor device with two-dimensional electron gas
#102Field-plate structures for semiconductor devices
#103Lateral super-junction MOSFET device and termination structure
#104Termination structure for gallium nitride schottky diode
#105ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE
#106Enhanced integration of DMOS and CMOS semiconductor devices
#107Lateral/vertical semiconductor device
#108Geometry for a Bidirectional Bipolar Transistor with Trenches that Surround the Emitter/Collector Regions
#109Semiconductor device
#110High voltage resistor with high voltage junction termination
#111System and method for fabricating high voltage power MOSFET
#112Circuit including semiconductor device with multiple individually biased space-charge control electrodes
#113Semiconductor device with low-conducting field-controlling element
#114Semiconductor device
#115Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
#116Semiconductor device
#117Semiconductor device with breakdown preventing layer
#118N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)
#119Power semiconductor devices having a semi-insulating field plate
#120Semiconductor device
#121Semiconductor device and manufacturing method thereof
#122Field plate structure for power semiconductor device and manufacturing method thereof
#123Split gate power semiconductor field effect transistor
#124Semiconductor device and manufacturing method thereof
#125Semiconductor device
#126Lateral power device having low specific on-resistance and using high-dielectric constant socket structure and manufacturing method therefor
#127Semiconductor heterojunction device
#128Group III-V transistor with semiconductor field plate
#129Electric field management for a group III-nitride semiconductor device
#130Semiconductor device with multiple space-charge control electrodes
#131Semiconductor device
#132Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device
#133High breakdown voltage semiconductor device
#134Semiconductor device
#135Integrated power device on a semiconductor substrate having an improved trench gate structure
#136Lateral insulated gate bipolar transistor
#137Lateral semiconductor device
#138High electron mobility transistors with field plate electrode
#139Lateral High-Voltage Transistor with Buried Resurf Layer and Associated Method for Manufacturing the Same
#140Vertical gallium nitride Schottky diode
#141Semiconductor device having lateral element
#142Semiconductor Device with Low-Conducting Field-controlling Element
#143Lateral high-voltage transistor and associated method for manufacturing
#144High-voltage transistor device
#145High voltage resistor with high voltage junction termination
#146Semiconductor device
#147SEMICONDUCTOR DEVICE
#148Method for manufacturing an integrated power device having gate structures within trenches
#149Compound semiconductor device
#150Semiconductor device with low-conducting field-controlling element
#151Semiconductor device comprising an isolation trench including semiconductor islands
#152Diode
#153Semiconductor device
#154Semiconductor component including a lateral transistor component
#155Lateral insulated-gate bipolar transistor
#156Integrated circuit having an edge passivation and oxidation resistant layer and method
#157SEMICONDUCTOR DEVICE
#158Semiconductor device having lateral diode
#159Current sensor, inverter circuit, and semiconductor device having the same
#160LATERAL INSULATED GATE BIPOLAR TRANSISTOR
#161FIELD EFFECT TRANSISTOR WITH TRENCH FILLED WITH INSULATING MATERIAL AND STRIPS OF SEMI-INSULATING MATERIAL ALONG TRENCH SIDEWALLS
#162Bipolar Junction Transistor Having a Carrier Trapping Layer
#163Semiconductor device having SOI substrate
#164SILICON DIE FLOORPLAN WITH APPLICATION TO HIGH-VOLTAGE FIELD EFFECT TRANSISTORS
#165High voltage junction field effect transistor with spiral field plate
#166Power semiconductor component including a potential probe
#167Semiconductor device, method of manufacturing the same and power-supply device using the same
#168Transistor component having an amorphous channel control layer
#169High-voltage semiconductor device
#170Method of sensing a high voltage
#171Semiconductor component including a lateral transistor component
#172Integrated power device on a semiconductor substrate having an improved trench gate structure
#173Field Effect Transistor
#174SEMICONDUCTOR DEVICE
#175Method of forming a high voltage sense element
#176Semiconductor device
#177Method for manufacturing semiconductor device
#178Semiconductor integrated circuit device and a manufacturing method for the same
#179Semiconductor device
#180High voltage sensor device and method therefor
#181Semiconductor device, integrated circuit including the semiconductor device, control IC for switching power supply and the switching power supply
#182Electronic device and heterojunction FET
#183Semiconductor apparatus
#184Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same
#185Dielectric isolation type semiconductor device and manufacturing method therefor
#186Semiconductor device
#187SEMICONDUCTOR DEVICE
#188Surface-stabilized semiconductor device
#189Semiconductor device, integrated circuit including the semiconductor device, control IC for switching power supply and the switching power supply
#190High voltage sensor device
#191Method of forming a Schottky diode and structure therefor
#192Field effect transistor with trench filled with insulating material and strips of semi-insulating material along trench sidewalls
#193Integrated circuit having an edge passivation and oxidation resistant layer and method
#194Trench semiconductor device and method of manufacturing it
#195Vertical semiconductor device
#196Lateral thin-film SOI device having a field plate with isolated metallic regions
#197Semiconductor integrated circuit device and a manufacturing method for the same
#198Reduced leakage power devices by inversion layer surface passivation
#199Terminations for semiconductor devices with floating vertical series capacitive structures
#200Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
#201Dielectric isolation type semiconductor device and manufacturing method therefor
#202Semiconductor device and method for manufacturing the same
#203High voltage sensor device and method therefor
#204Power semiconductor switching element
#205III-nitride power semiconductor with a field relaxation feature
#206Electronic device and heterojunction FET
#207RF decoupled field plate for FETs
#208Dielectric isolation type semiconductor device
#209Termination design with multiple spiral trench rings
#210Semiconductor device with enhanced breakdown voltage
#211Method for improving time dependent dielectric breakdown lifetimes
#212Vertical charge control semiconductor device with low output capacitance
#213Integrated circuits employing a field gate(s) without dielectric layers and/or work function metal layers for reduced gate layout parasitic resistance, and related methods
#214Transistors with field plates on fully depleted silicon-on-insulator platform and method of making the same
#215Resistive field structures for semiconductor devices and uses therof