208321 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched Cathode or anode electrodes for thyristors
SEMICONDUCTOR DEVICE
#2POWER SEMICONDUCTOR DEVICE
#3SEMICONDUCTOR DEVICE
#4INSULATED GATE BIPOLAR TRANSISTOR AND DIODE
#5Insulated gate bipolar transistor and diode
#6Short-circuit semiconductor component and method for operating it
#7High voltage tolerant circuit architecture for applications subject to electrical overstress fault conditions
#8Die stack assembly using an edge separation structure for connectivity through a die of the stack
#9Insulated gate bipolar transistor and diode
#10Silicon controlled rectifier
#11Bypass thyristor device with gas expansion cavity within a contact plate
#12Apparatus for automotive and communication systems transceiver interfaces
#13Inverting circuit
#14Semiconductor device and power converter
#15Location displacement detection method, location displacement detection device, and display device
#16Insulated gate bipolar transistor and diode
#17Power component protected against overheating
#18Light emitting component, print head and image forming apparatus
#19Flat gate commutated thyristor
#20Semiconductor component, method for processing a substrate and method for producing a semiconductor component
#21Insulated gate bipolar transistor and diode
#22DIODE AND POWER CONVERTOR USING THE SAME
#23Bipolar SCR
#24Power component protected against overheating
#25Die stack assembly using an edge separation structure for connectivity through a die of the stack
#26Fin-based semiconductor devices and methods
#27Semiconductor device that facilitates a reduction in the occurrences of cracking in a semiconductor layer accompanying thermal stress
#28Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method
#29Rectifier structures with low leakage
#30Reverse conducting power semiconductor device
#31POWER SEMICONDUCTOR DEVICE
#32Semiconductor device
#33Coherent optical receiver
#34Ultra-fast breakover diode
#35Ultra-fast breakover diode
#36Preventing shorting dendritic migration between electrodes
#37Vertical conduction power electronic device and corresponding realization method
#38Profiled contact for semiconductor device
#39Isolated junction field-effect transistor
#40Thyristor semiconductor device and switching method thereof
#41Semiconductor device and manufacturing method of the same
#42High-withstand voltage wide-gap semiconductor device and power device
#43High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
#44Vertical conduction power electronic device and corresponding realization method
#45Thyristor-type memory device
#46Isolated HF-control SCR switch
#47Semiconductor device wiring structure
#48Gate structure of thyristor
#49Bipolar SCR
#50Fabrication methodology for optoelectronic integrated circuits