208337 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched; Gate electrodes for field effect devices for charge coupled devices
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE
#2Memory device having 2-transistor vertical memory cell and wrapped data line structure
#3Non-volatile memory systems based on single nanoparticles for compact and high data storage electronic devices
#4Image pickup apparatus having wiring board with alternately arranged flying leads
#5Semiconductor device, memory circuit, method of manufacturing semiconductor device
#6Semiconductor device including image pick up device
#7Memory device having 2-transistor vertical memory cell and wrapped data line structure