208349 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
Field effect transistor and semiconductor device, and method for manufacturing same
#302SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A TENSILE STRESSED OVERLAYER
#303Semiconductor structure and method for manufacturing the same
#304Test structure for detection of gap in conductive layer of multilayer gate stack
#305Method for forming a semiconductor device including replacing material of dummy gate stacks with other conductive material
#306Self-aligned contacts for high k/metal gate process flow
#307Method for forming metal gate
#308Semiconductor device and method of manufacturing the same
#309Methods of manufacturing a semiconductor device
#310Self-aligned contact for replacement gate devices
#311Replacement metal gate structures providing independent control on work function and gate leakage current
#312Structure and method to fabricate a body contact
#313Method of fabricating gate and method of manufacturing semiconductor device using the same
#314Replacement gate MOSFET with a high performance gate electrode
#315Reacted conductive gate electrodes and methods of making the same
#316SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF
#317Methods of forming gate dielectric material
#318Methods of forming gates of semiconductor devices
#319Method of fabricating dual high-k metal gate for MOS devices
#320Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor
#321SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#322Semiconductor device with isolation structures and gate insulating film that contain an element for threshold reduction and method of manufacturing the same
#323Method of fabricating integrated circuit device, including removing at least a portion of a spacer
#324Semiconductor device and method for driving the same
#325Metal gate structures and methods for forming thereof
#326RECESSED CHANNEL ARRAY TRANSISTOR (RCAT) IN REPLACEMENT METAL GATE (RMG) LOGIC FLOW
#327Semiconductor devices including gate structures comprising colossal magnetocapacitive materials
#328Dual metal and dual dielectric integration for metal high-K FETs
#329Wafer level chip scale package and process of manufacture
#330Superior fill conditions in a replacement gate approach by using a tensile stressed overlayer
#331LDMOS using a combination of enhanced dielectric stress layer and dummy gates
#332Hybrid plasma-semiconductor electronic and optical devices
#333Transistor component having an amorphous channel control layer
#334Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
#335Recessed channel array transistor (RCAT) in replacement metal gate (RMG) logic flow
#336Dual metal and dual dielectric integration for metal high-k FETs
#337Method for forming a high-K gate stack with reduced effective oxide thickness
#338BANDGAP ENGINEERED MOS-GATED POWER TRANSISTORS
#339Gate of trench type MOSFET device and method for forming the gate
#340Integrated circuit transistors with multipart gate conductors
#341NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR PACKAGE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
#342Ultra-shallow junctions using atomic-layer doping
#343Method of fabricating dual high-k metal gates for MOS devices
#344Semiconductor device gate structure including a gettering layer
#345Transistor device and a method of manufacturing the same
#346Changing effective work function using ion implantation during dual work function metal gate integration
#347Low power circuit structure with metal gate and high-k dielectric
#348Method for fabricating a dual workfunction semiconductor device and the device made thereof
#349Manufacturing Method for Semiconductor Devices and Substrate Processing Apparatus
#350Wafer level chip scale package and process of manufacture
#351Resonant structure comprising wire and resonant tunneling transistor
#352Semiconductor device and method for fabricating the same including a gate insulation layer and conductive layer surrounding a pillar pattern
#353Semiconductor device and method of fabricating the same
#354Low power circuit structure with metal gate and high-k dielectric
#355CHANNEL STRESS MODIFICATION BY CAPPED METAL-SEMICONDUCTOR LAYER VOLUME CHANGE
#356Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow
#357Channel strain engineering in field-effect-transistor
#358TRANSISTOR, INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT
#359FIELD EFFECT TRANSISTOR WITH INVERTED T SHAPED GATE ELECTRODE AND METHODS FOR FABRICATION THEREOF
#360Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structures
#361Forming a semiconductor device having a metal electrode and structure thereof
#362Field effect transistor (FET) having nano tube and method of manufacturing the FET
#363Semiconductor device and method of fabricating the same
#364FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
#365Semiconductor device and method for fabricating semiconductor device
#366LDMOS using a combination of enhanced dielectric stress layer and dummy gates
#367Telecommunications cable enclosure
#368ULTRA-THIN Si MOSFET DEVICE STRUCTURE AND METHOD OF MANUFACTURE
#369CMOS SEMICONDUCTOR DEVICES HAVING DUAL WORK FUNCTION METAL GATE STACKS
#370Semiconductor device and manufacturing method thereof
#371Semiconductor device
#372Circuits and Integrated Circuits Including Field Effect Transistors Having Differing Body Effects
#373Power trench MOSFETs having SiGe/Si channel structure
#374Structure and method of forming a notched gate field effect transistor
#375Semiconductor device and method of fabricating semiconductor device using oxidation
#376Bandgap engineered MOS-gated power transistors
#377Trailer cover system
#378ISFET using PbTiOas sensing film
#379Telecommunications cable enclosure
#380Vertical field-effect transistor, method of manufacturing the same, and display device having the same
#381ISFET using PbTiO as sensing film
#382Structure and method of forming a notched gate field effect transistor
#383Methods of forming reacted conductive gate electrodes
#384Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
#385Semiconductor device and manufacturing method thereof
#386Ultra-thin Si MOSFET device structure and method of manufacture
#387Trailer cover system
#388Reacted conductive gate electrodes
#389Suppression of MOSFET gate leakage current
#390Super-fast transient response (STR) AC/DC converter for high power density charging application
#391Method of forming field effect transistors with replacement metal gates and contacts and resulting structure
#392Tunneling field effect transistor and method of fabricating the same
#393Method of forming field effect transistors with replacement metal gates and contacts and resulting structure
#394Semiconductor devices comprising nitrogen-doped gate dielectric
#395Metal semiconductor field effect transistor with carbon nanotube gate
#396Fabrication of a vertical fin field effect transistor having a consistent channel width
#397Semiconductor package with isolation wall
#398Structure and method for replacement gate integration with self-aligned contacts
#399Semiconductor device having metal gate and fabrication method thereof
#400Method to form stacked germanium nanowires and stacked III-V nanowires
#401Semiconductor device and method for fabricating the same
#402Nanostructure-based vacuum channel transistor
#403Method of fabricating integrated circuit transistors with multipart gate conductors
#404Anodization of gate with laser vias and cuts
#405Method and apparatus for adjusting threshold voltage in a replacement metal gate integration