208365 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed; Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET; Insulating materials associated therewith with cavities, e.g. containing a gas
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#2METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER
#3CONDUCTIVE CAPPING FOR WORK FUNCTION LAYER AND METHOD FORMING SAME
#4AIR SPACER FOR A GATE STRUCTURE OF A TRANSISTOR
#5SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS
#6Microfluidic channels sealed with directionally-grown plugs
#7TRANSISTOR SPACER STRUCTURES
#8Method for fabricating semiconductor device with graphene-based element
#9Air spacers in transistors and methods forming same
#10Semiconductor structure with air gap and method sealing the air gap
#11Gate spacer structure and method of forming same
#12SEALED CAVITY EMBEDDED IN A SEMICONDUCTOR WAFER
#13TRANSISTOR STRUCTURE HAVING AN AIR SPACER AND METHOD FOR MAKING THE SAME
#14Method for forming air gap between gate dielectric layer and spacer
#15Air spacer for a gate structure of a transistor
#16Semiconductor device
#17SONOS ONO STACK SCALING
#18Semiconductor device with air-gap spacers
#19Gate spacer structure and method of forming same
#20Semiconductor structure with air gap and method sealing the air gap
#21Conductive capping for work function layer and method forming same
#22Semiconductor device and manufacturing method of semiconductor device
#23Method for manufacturing semiconductor memory having reduced interference between bit lines and word lines
#24Method for fabricating semiconductor device with graphene-based element
#25Semiconductor device with graphene-based element and method for fabricating the same
#26Solid-state image-capturing element having floation diffusion and hollow regions
#27Semiconductor device and manufacturing method of semiconductor device
#28Semiconductor device and manufacturing method of a semiconductor device
#29Method of forming semiconductor structure
#30Transistor spacer structures
#31Methods of forming a replacement gate structure for a transistor device
#32Non-volatile memory structure and manufacturing method thereof
#33Transistors with a sectioned epitaxial semiconductor layer
#34Transistor with insulator
#35Semiconductor device
#36Air spacers in transistors and methods forming same
#37Semiconductor structure and method of forming the same
#38Semiconductor device structure with gate stack and method for forming the same
#39SONOS ONO STACK SCALING
#40Gate spacer structure and method of forming same
#41Transistor spacer structures
#42Semiconductor structure with air gap and method sealing the air gap
#43Device including air gapping of gate spacers and other dielectrics and process for providing such
#44Transistor with airgap spacer
#45Semiconductor device and manufacturing method thereof
#46Transistor with airgap spacer and tight gate pitch
#47Cavity structures under shallow trench isolation regions
#48Integrated electronic circuit with airgaps
#49Air spacer for a gate structure of a transistor
#50Semiconductor memory device and method of manufacturing semiconductor memory device
#51Contact over active gate employing a stacked spacer
#52Contact over active gate employing a stacked spacer
#53Semiconductor structure and manufacturing method thereof
#54Gaseous spacer and methods of forming same
#55Semiconductor structure with air gap and method sealing the air gap
#56Air spacers in transistors and methods forming same
#57Gaseous spacer and methods of forming same
#58Sealed cavity structures with a planar surface
#59Asymmetric air spacer gate-controlled device with reduced parasitic capacitance
#60Air spacers in transistors and methods forming same
#61Contact over active gate employing a stacked spacer
#62Sealed cavity structures with a planar surface
#63Method for manufacturing semiconductor structure
#64Semiconductor memory having reduced interference between bit lines and word lines
#65Manufacturing method of semiconductor device
#66SONOS ONO stack scaling
#67Semiconductor device having a triple insulating film surrounded void
#68Method for fabricating metal gate structure
#69FinFET isolation structure and method for fabricating the same
#70Etch stop for airgap protection
#71Semiconductor device and fabrication method thereof
#72NEMS devices with series ferroelectric negative capacitor
#73Semiconductor memory device and method for manufacturing same
#74Method for manufacturing semiconductor structure
#75Semiconductor device and manufacturing method thereof
#76Semiconductor device
#77Etch stop for airgap protection
#78METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#79NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#80SONOS ONO stack scaling
#81Method for forming a stress-reduced field-effect semiconductor device
#82Semiconductor device and method of manufacturing the same
#83Trenched gate with sidewall airgap spacer
#84NEMS devices with series ferroelectric negative capacitor
#85Nonvolatile semiconductor memory device and method of manufacturing the same
#86Vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer and method of forming a VMGFET
#87Methods of forming isolated channel regions for a FinFET semiconductor device and the resulting device
#88Flash gate air gap
#89Air-gap offset spacer in FinFET structure
#90Stress-reduced field-effect semiconductor device and method for forming therefor
#91AIR-SPACER MOS TRANSISTOR
#92SEMICONDUCTOR DEVICES INCLUDING VERTICAL CHANNEL TRANSISTORS AND METHODS OF FABRICATING THE SAME
#93ADHESION LAYER AND MULTIPHASE ULTRA-LOW k DIELECTRIC MATERIAL
#94MEMORY ARRAYS WITH AIR GAPS BETWEEN CONDUCTORS AND THE FORMATION THEREOF
#95SONOS ONO stack scaling
#96Stress-reduced field-effect semiconductor device and method for forming therefor
#97Semiconductor device having plural memory cells with cavities formed therein, and method of manufacturing the same
#98Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD
#99Semiconductor device and method for fabricating the device
#100EMS tunable transistor
#101Semiconductor devices including vertical channel transistors and methods of fabricating the same
#102Method for MEMS threshold sensor packaging
#103SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#104NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#105Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation
#106Suspended-gate MOS transistor with non-volatile operation
#107Field effect transistor (FET) having nano tube and method of manufacturing the FET
#108Semiconductor device and method for manufacturing the same
#109Ultra high voltage MOS transistor device and method of making the same
#110Semiconductor device
#111Air tunnel floating gate memory cell
#112Method for the elimination of the effects of defects on wafers
#113Semiconductor device and method for manufacturing the same
#114Trench MIS device and method for manufacturing trench MIS device
#115Semiconductor device and method of fabricating the same
#116Semiconductor memory device and manufacturing method thereof
#117Metal resistor structure in at least one cavity in dielectric over TS contact and gate structure
#118Semiconductor device having void between gate electrode and sidewall spacer and manufacturing method thereof
#119Trenched power semiconductor element
#120FinFET isolation structure and method for fabricating the same