208372 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Sub-classes:QUANTUM DEVICE INCLUDING MODERATE FLUORIATED GRAPHENE AND METHOD FOR FABRICATING SAME
#2VARACTOR COMPRISING HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL
#3SEMICONDUCTOR DEVICE
#4Approach to preventing atomic diffusion and preserving electrical conduction using two dimensional crystals and selective atomic layer deposition
#5Apparatus and method of fabricating lighting apparatus using organic light emitting device
#6Graphene device and method of fabricating a graphene device
#7Methods of forming graphene-containing switches
#8Methods of forming graphene-containing switches
#9Graphene device and method of fabricating a graphene device
#10Method of fabricating n-type semiconductor diamond, and semiconductor diamond
#11Method of fabricating n-type semiconductor diamond, and semiconductor diamond
#12Layered structures