208374 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
Sub-classes:SYSTEM AND METHOD FOR TWO-DIMENSIONAL ELECTRONIC DEVICES
#2GRAPHENE TRANSISTOR
#3Metal substrate structure for a semiconductor power module
#4Doped encapsulation material for diamond semiconductors
#5Transistor with fluorinated graphene spacer
#6Vertical tunnel FET with self-aligned heterojunction
#7Field effect transistor and manufacturing method thereof
#8Transistor with fluorinated graphene spacer
#9Method for Planarizing Graphene Layer
#10Ternary barristor with schottky junction graphene semiconductor
#11Semiconductor structure having a single or multiple layer porous graphene film and the fabrication method thereof
#12Semiconductor device
#13Method of making a graphene base transistor with reduced collector area
#14Semiconductor device including two-dimensional material
#15Method of forming graphene nanopattern by using mask formed from block copolymer
#16Method for processing a carrier and an electronic component
#17Graphene base transistor and method for making the same
#18Method of making a graphene base transistor with reduced collector area
#19Vertical-channel type junction SiC power FET and method of manufacturing same
#20Semiconductor device and method for manufacturing same
#21Graphene device and method of manufacturing the same
#22Gate tunable tunnel diode
#23Semiconductor device and method of manufacturing the same
#24Method to fabricate micro and nano diamond devices
#25Transistor having graphene base
#26Semiconductor diode device
#27Method for processing a carrier and an electronic component
#28Vertical-channel type junction SiC power FET and method of manufacturing same
#29Graphene base transistor with reduced collector area
#30Method for etching atomic layer of graphene
#31Gate tunable tunnel diode
#32Gate tunable tunnel diode
#33Graphene semiconductor device, manufacturing method thereof, organic light emitting display, and memory including graphene semiconductor device
#34BORON-DOPED DIAMOND SEMICONDUCTOR
#35Methods of making heterojunction devices
#36Transistor having graphene base
#37Producing a diamond semiconductor by implanting dopant using ion implantation
#38Diamond semiconductor element and process for producing the same
#39Diamond semiconductor element and process for producing the same
#40Electrical switching device and method of embedding catalytic material in a diamond substrate
#41Field effect transistor using diamond and process for producing the same
#42Boron-doped diamond semiconductor
#43DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
#44Electrical switching device and method of embedding catalytic material in a diamond substrate
#45Diamond semiconductor element and process for producing the same
#46Diamond semiconductor element and process for producing the same
#47DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
#48Method of fabricating n-type semiconductor diamond, and semiconductor diamond
#49Boron-doped diamond semiconductor
#50All diamond self-aligned thin film transistor
#51Method of fabricating n-type semiconductor diamond, and semiconductor diamond
#52P-n diodes and p-n-p heterojunction bipolar transistors with diamond collectors and current tunneling layers
#53Sub-wavelength antenna enhanced bilayer graphene tunable photodetector