208425 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor Devices using spin polarized carriers
Magnetic Memory Element Including Perpendicular Enhancement Layer and Oxide Cap Layer
#2TIN AS NUCLEAR SPIN QUBIT IN SILICON
#3MEMORY DEVICE WITH MAGNETIC TUNNEL JUNCTION
#4ELECTRONIC DEVICE AND ASSOCIATED SYSTEM, IN PARTICULAR MEMORY, LOGIC DEVICE OR NEUROMORPHIC DEVICE
#5ELECTRICAL CONTROL OF A QUANTUM PROCESSING ELEMENT
#6ULTRAVIOLET SPIN BASED SYSTEM AND METHOD
#7TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC
#8Spin-based gate-all-around transistors
#9Antisite Defect Qubits in Monolayer Transition Metal Dichalcogenides
#10Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers
#11VERTICAL BIT DATA PATHS FOR INTEGRATED CIRCUITS
#12METHOD FOR DETERMINING A SPIN/CHARGE CONVERSION OPERATING POINT, METHOD FOR DETERMINING AN OPERATING POINT ASSOCIATED WITH CHARGING OF A SINGLET STATE AND SYSTEM THEREFOR
#13Memory device and forming method thereof
#14Gating a semiconductor layer into a quantum spin hall insulator state
#15Device for storing controlling and manipulating quantum information (qubits) on a semiconductor
#16Magnetic memory element incorporating dual perpendicular enhancement layers
#17MAGNETOELECTRIC SPIN ORBIT LOGIC TRANSISTOR WITH A SPIN FILTER
#18SYSTEMS, DEVICES, AND METHODS TO INTERACT WITH QUANTUM INFORMATION STORED IN SPINS
#19DEVICE COMPRISING ELECTROSTATIC CONTROL GATES DISTRIBUTED ON TWO OPPOSITE FACES OF A SEMICONDUCTOR PORTION
#20Monolithic qubit integrated circuits
#21Reprogrammable quantum processor architecture incorporating quantum error correction
#22Interlayer exchange coupling logic cells
#23Secure non-deterministic, self-modifiable computing machine
#24Quantum well stacks for quantum dot devices
#25Spin to photon transducer
#26Quantum well stacks for quantum dot devices
#27Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets
#28Quantum processing system
#29Two-dimensional materials integrated with multiferroic layers
#30Spin qubit quantum device read by impedance measurement
#31Magnetic memory element incorporating dual perpendicular enhancement layers
#32Device for electric field induced local magnetization
#33Systems and methods of fabricating gate electrode on trenched bottom electrode based molecular spintronics device
#34Reprogrammable quantum processor architecture incorporating quantum error correction
#35Graphene spin transistor and graphene Rashba spin logic gate for all-electrical operation at room temperature
#36Quantum well stacks for quantum dot devices
#37Quantum well stacks for quantum dot devices
#38Growth of Single Atom Chains for Nano-Electronics and Quantum Circuits
#39Method for producing an electronic component with double quantum dots
#40Magnetoresistance effect element, magnetic sensor and spin transistor
#41Magnetic memory element incorporating perpendicular enhancement layer
#42Method for controlling a spin qubit quantum device
#43Magnetic contacts for spin qubits
#44Monolithic qubit integrated circuits
#45Skyrmion diode and method of manufacturing the same
#46Semiconductor element, magnetoresistance effect element, magnetic sensor and spin transistor
#47Perpendicular spin injection via spatial modulation of spin orbit coupling
#48Semiconductor controlled quantum swap interaction gate
#49Semiconductor controlled quantum interaction gates
#50Classic-quantum injection interface device
#51Semiconductor controlled quantum Pauli interaction gate
#52FinFET quantum structures utilizing quantum particle tunneling through oxide
#53Finfet quantum structures utilizing quantum particle tunneling through local depleted well
#54Reprogrammable quantum processor architecture incorporating calibration loops
#55Reprogrammable quantum processor architecture
#56Quantum structure incorporating electric and magnetic field control
#57Quantum structure incorporating phi angle control
#58Quantum structure incorporating theta angle control
#59Quantum-classic detection interface device
#60Planar quantum structures utilizing quantum particle tunneling through local depleted well
#61Non-equilibrium polaronic quantum phase-condensate based electrical devices
#62Apparatus and method for boosting signal in magnetoelectric spin orbit logic
#63Magnetoelectric spin orbit logic transistor with a spin filter
#64Tunnel magnetoresistive effect element and magnetic memory
#65Magnetoresistance effect element, magnetic sensor and spin transistor
#66Magnetoresistance effect element, magnetic sensor and spin transistor
#67Quantum device comprising FET transistors and qubits co-integrated on the same substrate
#68Magnetic memory element including magnesium perpendicular enhancement layer
#69Methods and apparatus to perform complex number generation and operation on a chip
#70Transistors with metal source and drain contacts including a Heusler alloy
#71Quantum device with spin qubits coupled in modulatable manner
#72Wafer-scale integration of dopant atoms for donor- or acceptor-based spin qubits
#73Reconfigurable logic device using electrochemical potential
#74Magnetic random access memory with perpendicular enhancement layer
#75Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory
#76Quantum device with spin qubits
#77Systems, devices, and methods to interact with quantum information stored in spins
#78Magnetic tunnel diode and magnetic tunnel transistor
#79Circuits and devices based on enhanced spin Hall effect for efficient spin transfer torque
#80Magneto-electric logic devices using semiconductor channel with large spin-orbit coupling
#81Advanced processing apparatus comprising a plurality of quantum processing elements
#82Thermoelectric conversion element and method of manufacturing the same, and heat radiation fin
#83Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
#84Two-dimensional materials integrated with multiferroic layers
#85Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
#86Magnetic memory element with perpendicular enhancement layer
#87Magnetic memory element with iridium anti-ferromagnetic coupling layer
#88Magnetic majority gate device
#89Nanoscale electronic spin filter
#90Semiconductor device
#91Fast magnetoelectric device based on current-driven domain wall propagation
#92Spin control electronic device operable at room temperature
#93Data reader with spin filter
#94Skyrmion diode and method of manufacturing the same
#95Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making
#96Magnetic state element and circuits
#97Data reader with spin filter
#98Magnetic memory element with composite perpendicular enhancement layer
#99Extremely large spin hall angle in topological insulator pn junction
#100Spin filter device, method for its manufacture and its use
#101Magnetoresistive element and spin-transport element
#102Magnetoresistive element, spin MOSFET, magnetic sensor, and magnetic head
#103Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
#104Spin transistor memory
#105Negative capacitance logic device, clock generator including the same and method of operating clock generator
#106Magnetic random access memory with perpendicular interfacial anisotropy
#107Magnetic random access memory with tri-layer reference layer
#108Spintronic logic element
#109Emitter-coupled spin-transistor logic
#110Spin wave device and logic circuit using spin wave device
#111Coherent spin field effect transistor
#112Magnetic memory, spin element, and spin MOS transistor
#113Thermoelectric conversion element and method for making the same
#114All-electric spin field effect transistor
#115Current induced spin-momentum transfer stack with dual insulating layers
#116Phase transition devices and smart capacitive devices
#117Thermoelectric conversion element and manufacturing method for the same
#118High performance topological insulator transistors
#119Magnetic memory element with composite fixed layer
#120Spin valve element
#121SPIN MOSFET
#122Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making
#123Magnetic random access memory with perpendicular enhancement layer
#124Spintronic device
#125Magnetic random access memory element having tantalum perpendicular enhancement layer
#126Versatile spin-polarized electron source
#127Spin motor and rotary member
#128Voltage switchable non-local spin-FET and methods for making same
#129Spin polarization transistor element
#130Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer
#131Magnetic random access memory with perpendicular enhancement layer
#132Magnetic random access memory with perpendicular interfacial anisotropy
#133Electric field ferromagnetic resonance excitation method and magnetic function element employing same
#134Magnetic field effect transistor
#135Spin transistor, and semiconductor device, memory device, microprocessor, processor, system, data storage system and memory system including the spin transistor
#136Magnetic memory, spin element, and spin MOS transistor
#137SPIN FET AND MAGNETORESISTIVE ELEMENT
#138Device for achieving multi-photon interference from nitrogen-vacancy defects in diamond material
#139Complementary spin device having a gate, a source, a first and second drain electrode
#140Bipolar spin-transfer switching
#141Magneto-electric voltage controlled spin transistors
#142Thermoelectric conversion element and method of manufacturing the same, and heat radiation fin
#143MR enhancing layer (MREL) for spintronic devices
#144MR enhancing layer (MREL) for spintronic devices
#145Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#146Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#147Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#148Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer
#149Coherent spin field effect transistor
#150Rectifying device, transistor, and rectifying method
#151Voltage controlled spin transport channel
#152Magnetic random access memory having perpendicular composite reference layer
#153BEOL structures incorporating active devices and mechanical strength
#154Beol structures incorporating active devices and mechanical strength
#155Stacked structure, spin transistor, and reconfigurable logic circuit
#156Spin filter and driving method thereof
#157Magnetic random access memory having perpendicular enhancement layer
#158Perpendicular STTMRAM device with balanced reference layer
#159Emitter-coupled spin-transistor logic
#160Spin logic based on persistent spin helices
#161Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications
#162Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods
#163Spin torque transfer memory cell structures and methods
#164Spin field effect logic devices
#165Spin transistors and memory
#166Method for the thermal photoswitching of spin-transition materials, and uses thereof
#167Coherent spin field effect transistor
#168Spin device, driving method of the same, and production method of the same
#169Electric current-spin current conversion device
#170Complementary logic device using spin injection
#171Scalable quantum computer architecture with coupled donor-quantum dot qubits
#172Magnetization switching through magnonic spin transfer torque
#173Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit
#174Spin transistor and memory
#175Graphene valley singlet-triplet qubit device and the method of the same
#176BEOL structures incorporating active devices and mechanical strength
#177Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#178Bipolar spin-transfer switching
#179Spin torque transfer memory cell structures and methods
#180Tunneling magnetoresistive effect element and spin MOS field-effect
#181Spin transport device
#182Nuclear-spin polarization detection device and nuclear-spin polarization detection method
#183Staggered magnetic tunnel junction
#184SPIN DEVICE, AND MAGNETIC SENSOR AND SPIN FET USING THE SAME
#185Spin filter device, method for its manufacture and its use
#186Magnetic random access memory with field compensating layer and multi-level cell
#187Magnetic element with improved out-of-plane anisotropy for spintronic applications
#188Spin transport device
#189Semiconductor device and method of manufacturing the same
#190Magnetic phase change logic
#191Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor
#192INTEGRATED CIRCUIT
#193INTEGRATED CIRCUIT
#194Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
#195Spin injection source and manufacturing method thereof
#196Spin injection electrode structure, spin transport element, and spin transport device
#197Spin MOSFET and reconfigurable logic circuit
#198Magnetic tunnel junction device
#199SPIN TRANSISTOR AND INTEGRATED CIRCUIT
#200Spin transistor using N-type and P-type double carrier supply layer structure
#201MR enhancing layer (MREL) for spintronic devices
#202Spin transistor, programmable logic circuit, and magnetic memory
#203Spin wave element
#204Spin transistor having multiferroic gate dielectric
#205Spin memory and spin transistor
#206Sidewall coating for non-uniform spin momentum-transfer magnetic tunnel junction current flow
#207PHASE TRANSITION DEVICES AND SMART CAPACITIVE DEVICES
#208Programmable device
#209Control and readout of electron or hole spin
#210Magnetic random access memory and initializing method for the same
#211Spin memory and spin FET
#212Epitaxial growth of single crystalline MgO on germanium
#213Spin filter junction and method of fabricating the same
#214Magneto-electric field effect transistor for spintronic applications
#215Reconfigurable logic device using spin accumulation and diffusion
#216Device and method for manipulating direction of motion of current carriers
#217Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
#218Staggered magnetic tunnel junction
#219Spin torque transfer MRAM design with low switching current
#220Spin transport device
#221Magnetic nanotransistor
#222Sidewall coating for non-uniform spin momentum-transfer magnetic tunnel junction current flow
#223Spin transistor and method of operating the same
#224Electronic device using quantum dot
#225Magnetic tunnel junction transistor
#226Magnetic tunnel junction transistor
#227Spin MOSFET and reconfigurable logic circuit
#228Chromium doped diamond-like carbon
#229Manufacturing method of silicon spin transport device and silicon spin transport device
#230Spin transistor and method of manufacturing the same
#231Spin device
#232Staggered STRAM cell
#233Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
#234Spin field effect logic devices
#235Method of forming ferromagnetic material, transistor and method of manufacturing the same
#236Spin-polarised charge-carrier device
#237Nanodevices for spintronics and methods of using same
#238Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor
#239Method for changing spin relaxation, method for detecting spin current and spintronics device using spin relaxation
#240Spin transistor, programmable logic circuit, and magnetic memory
#241EPR pair generation
#242Spin transistor using double carrier supply layer structure
#243Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same
#244Spin transistor, integrated circuit, and magnetic memory
#245Spin MOSFET and reconfigurable logic circuit using the spin MOSFET
#246AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE
#247Programmable device
#248Magnetic tunnel junction transistor
#249Spin injector
#250Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using the same
#251Semiconductor device including a plurality of different functional elements and method of manufacturing the same
#252Semiconductor device having a magnetization configuration of source and drain ferromagnetic electrodes and method of manufacturing the same
#253Tunneling magnetoresistive effect element and spin MOS field-effect transistor
#254Non-volatile memory element and method of operation therefor
#255Spin transistor using epitaxial ferromagnet-semiconductor junction
#256Non-magnetic semiconductor spin transistor
#257SPIN FILTER SPINTRONIC DEVICES
#258MULTILEVEL LOGIC BALLISTIC DEFLECTION TRANSISTOR
#259Spin field effect transistor using half metal and method of manufacturing the same
#260Spin-wave architectures
#261Structure and method for manipulating spin quantum state through dipole polarization switching
#262Double density MRAM with planar processing
#263Spin transistor and magnetic memory
#264Spin transistor and method of manufacturing same
#265SPIN FET AND MAGNETORESISTIVE ELEMENT
#266Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
#267Logic circuit and single-electron spin transistor
#268Spin transistor using ferromagnet
#269Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities
#270Tunnel transistor having spin-dependent transfer characteristics and non-volatile memory using the same
#271Spin transistor using perpendicular magnetization
#272SPIN DETECTION DEVICE AND METHODS FOR USE THEREOF
#273Spin transistor, programmable logic circuit, and magnetic memory
#274Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions
#275Spin FET, magnetoresistive element and spin memory
#276Vertical spin transistor and method of manufacturing the same
#277Method and calculator for modeling non-equilibrium spin polarized charge transport in nano-structures
#278Spin transistor using stray magnetic field
#279Spin transistor
#280MgO-based tunnel spin injectors
#281Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
#282Spin memory and spin FET
#283Semiconductor circuit that varies a drain current value by utilizing a degree of freedom of an electron spin and semiconductor device using same
#284Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
#285Spin MOSFET
#286Spin memory with write pulse
#287Multi-bit spin memory
#288Spintronic transistor
#289SPINTRONIC DEVICES WITH CONSTRAINED SPINTRONIC DOPANT
#290Magnetic storage device which includes a three terminal magnetic sensor having a collector region electrically isolated from a slider body
#291Spin-wave architectures
#292Methods of making spintronic devices with constrained spintronic dopant
#293Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same
#294Device and method for manipulating direction of motion of current carriers
#295Spin based memory coupled to CMOS amplifier
#296Spin based magnetic sensor
#297Spin transistor and manufacturing method thereof
#298Spin fet and spin memory
#299Spin polarization amplifying transistor
#300Spin-injection FET