ClassID:

208428

H01L29/685 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched Hi-Lo semiconductor devices, e.g. memory devices

Recent Application in this class:
#1
20250040439
2025-01-30

POWER REGENERATION IN A MEMORY DEVICE

#2
20240332082
2024-10-03

STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES

#3
20240296319
2024-09-05

INTEGRATE-AND-FIRE NEURON CIRCUIT AND OPERATION METHOD THEREOF

#4
20240290873
2024-08-29

FET WITH MULTI-VALUE SWITCHING FUNCTION

#5
20240282661
2024-08-22

SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

#6
20240178279
2024-05-30

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#7
20240162035
2024-05-16

MULTILAYER STACKING WAFER BONDING STRUCTURE AND METHOD OF MANUFACTURING THE SAME

#8
20240063296
2024-02-22

LOGIC GATE DEVICE

#9
20230411322
2023-12-21

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

#10
20230343859
2023-10-26

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

#11
20230268396
2023-08-24

Field effect transistor with controllable resistance

#12
20230253503
2023-08-10

Semiconductor device and method

#13
20230231039
2023-07-20

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING SAME

#14
20230065314
2023-03-02

Power regeneration in a memory device

#15
20220310827
2022-09-29

Memory device including vertical stack structure and method of manufacturing the same

#16
20220165871
2022-05-26

Semiconductor device and method

#17
20220069126
2022-03-03

Method for fabricating semiconductor device with programmable element

#18
20220045212
2022-02-10

Semiconductor device with programmable element and method for fabricating the same

#19
20210408240
2021-12-30

Field effect transistor with controllable resistance

#20
20210399116
2021-12-23

Structure providing charge controlled electronic fuse

#21
20210127454
2021-04-29

Method for regulating a resistive element intended for deicing and/or demisting a support, and the associated device

#22
20210098611
2021-04-01

Dual-gated memtransistor crossbar array, fabricating methods and applications of same

#23
20200152741
2020-05-14

Field effect transistor with controllable resistance

#24
20190312108
2019-10-10

Field effect transistor with controllable resistance

#25
20190198617
2019-06-27

Field effect transistor with controllable resistance

#26
20180294406
2018-10-11

Nonvolatile memory comprising variable resistance transistors and method for operating the same

#27
20180286874
2018-10-04

Non-volatile memory structures having multi-layer conductive channels

#28
20180158955
2018-06-07

Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers

#29
20180114840
2018-04-26

Semiconductor memory device and fabrication method thereof

#30
20170365781
2017-12-21

ReRAM using stack of iron oxide and graphene oxide films

#31
20170330976
2017-11-16

Semiconductor device structure

#32
20170084619
2017-03-23

Method of fabricating synapse memory device

#33
20150302932
2015-10-22

Memory device, semiconductor unit and method of operating the same, and electronic apparatus

#34
20150123078
2015-05-07

Graphene device and method of manufacturing the same

#35
20150041748
2015-02-12

Nonvolatile memory element and method of manufacturing the same

#36
20150013588
2015-01-15

Crystallization processing for semiconductor applications

#37
20140077273
2014-03-20

Mechanical memory transistor

#38
20140061773
2014-03-06

Semiconductor memory device

#39
20140050036
2014-02-20

Graphene-based non-volatile memory

#40
20130299764
2013-11-14

LOCALIZED DEVICE

#41
20130249017
2013-09-26

Nonvolatile memory device and method of fabricating the same

#42
20130223166
2013-08-29

Graphene-based memory devices and methods therefor

#43
20130175490
2013-07-11

Nonvolatile semiconductor memory device and method of manufacturing the same

#44
20130119340
2013-05-16

Multi-bit resistive-switching memory cell and array

#45
20130026558
2013-01-31

SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE MATERIAL AND METHODS OF FABRICATING THE SAME

#46
20130020631
2013-01-24

Memory cell and method of manufacturing a memory cell

#47
20120292707
2012-11-22

Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates

#48
20120280301
2012-11-08

Phase transition memories and transistors

#49
20120212999
2012-08-23

Methods of forming programmed memory cells

#50
20120091414
2012-04-19

Semiconductor device and method for manufacturing the same

#51
20120063198
2012-03-15

Methods of forming memory cells and methods of forming programmed memory cells

#52
20120037872
2012-02-16

Amorphous semiiconductor layer memory device

#53
20110266605
2011-11-03

Memristive transistor memory

#54
20110194339
2011-08-11

Microelectronic programmable device and methods of forming and programming the same

#55
20110188290
2011-08-04

Semiconductor devices including variable resistance materials and methods of operating the same

#56
20110129959
2011-06-02

Crystallization processing for semiconductor applications

#57
20110127486
2011-06-02

Phase-change memory device, phase-change channel transistor and memory cell array

#58
20110095256
2011-04-28

Memory cells

#59
20110063905
2011-03-17

Multi-valued ROM using carbon-nanotube and nanowire FET

#60
20110032765
2011-02-10

Memory formed by using defects

#61
20100314609
2010-12-16

Nanowire memory

#62
20100283028
2010-11-11

NON-VOLATILE RESISTANCE SWITCHING MEMORIES AND METHODS OF MAKING SAME

#63
20100187502
2010-07-29

Enclosed nanotube structure and method for forming

#64
20100135071
2010-06-03

Microelectronic programmable device and methods of forming and programming the same

#65
20100135064
2010-06-03

Switch and method of forming the same

#66
20100117042
2010-05-13

High level integration phase change memory device having an increased diode junction area and method for manufacturing the same

#67
20090196096
2009-08-06

Methods of forming memory cells, and methods of forming programmed memory cells

#68
20090186444
2009-07-23

Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines

#69
20090146226
2009-06-11

Mechanical memory transistor

#70
20090003083
2009-01-01

Memory cell with voltage modulated sidewall poly resistor

#71
20080265285
2008-10-30

Microelectric programmable device and methods of forming and programming the same

#72
20080251777
2008-10-16

Field Effect Device with a Channel with a Switchable Conductivity

#73
20080211011
2008-09-04

NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

#74
20080130349
2008-06-05

Non-volatile memory device, method of manufacturing the same, and method of operating the same

#75
20080106926
2008-05-08

Non-volatile resistance switching memories and methods of making same

#76
20080049490
2008-02-28

Phase-change memory device, phase-change channel transistor, and memory cell array

#77
20070297231
2007-12-27

Non-volatile memory structure

#78
20070099347
2007-05-03

Array of cells including a selection bipolar transistor and fabrication method thereof

#79
20070069284
2007-03-29

Method and apparatus for operating a string of charge trapping memory cells

#80
20070007579
2007-01-11

Memory cell comprising a thin film three-terminal switching device having a metal source and /or drain region

#81
20060289908
2006-12-28

Field effect device with a channel with a switchable conductivity

#82
20060243973
2006-11-02

Thin film diode integrated with chalcogenide memory cell

#83
20060175653
2006-08-10

Nonvolatile nanochannel memory device using mesoporous material

#84
20060108639
2006-05-25

Transistor and method of operating transistor

#85
20060071298
2006-04-06

Polysilicon memory element

#86
20060071244
2006-04-06

Switching or amplifier device, in particular transistor

#87
20060049448
2006-03-09

Method and apparatus for operating a string of charge trapping memory cells

#88
20060049392
2006-03-09

Process for manufacturing an array of cells including selection bipolar junction transistors

#89
20050247969
2005-11-10

Nonvolatile semiconductor memory device

#90
20050219901
2005-10-06

Non-volatile memory structure

#91
20050208699
2005-09-22

Phase change memory cell on silicon-on insulator substrate

#92
20050111252
2005-05-26

Field effect device with a channel with a switchable conductivity

#93
20050101084
2005-05-12

Thin film diode integrated with chalcogenide memory cell

#94
20050059187
2005-03-17

Non-volatile memory structure

#95
20050056910
2005-03-17

Non-volatile memory structure

#96
20050032276
2005-02-10

Semiconductor element and process for manufacturing the same

#97
20050019699
2005-01-27

Resistance variable device

#98
17412485
2022-10-11

Reconfigurable logic-in-memory device using silicon transistor

#99
16210306
2020-04-21

Three-dimensional memory device containing capacitor pillars and methods of making the same