208430 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices Double base diodes
ELECTRONIC COMPONENTS EMPLOYING FIELD IONIZATION
#2Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#3Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#4Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#5Current switching transistor
#6Methods of producing bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations
#7Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations