208433 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Transistor-type devices, i.e. able to continuously respond to applied control signals; Bipolar junction transistors structurally associated with other devices
SEMICONDUCTOR DEVICE AND POWER AMPLIFIER INCLUDING THE SAME
#2Memory Device Having Electrically Floating Body Transistor
#3HEATER TERMINAL CONTACTS
#4Integrated circuit structure with diode over lateral bipolar transistor
#5A NOVEL TRANSISTOR DEVICE
#6POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
#7FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN)
#8MANAGING SEMICONDUCTOR LAYERS FOR A BIPOLAR-JUNCTION TRANSISTOR IN A PHOTONIC PLATFORM
#9Fin-based lateral bipolar junction transistor with reduced base resistance and method
#10Method for manufacturing an integrated circuit comprising an N-type laterally diffused metal oxide semiconductor (NLDMOS) transistor
#11Memory device having electrically floating body transistor
#12Memory cell comprising first and second transistors and methods of operating
#13Power device integration on a common substrate
#14High Voltage ESD Protection Apparatus
#15Semiconductor device with insulated gate bipolar transistor region and diode region provided on semiconductor substrate and adjacent to each other
#16Device having bipolar junction transistors and finFET transistors on the same substrate
#17Diode triggered compact silicon controlled rectifier
#18Memory device having electrically floating body transistor
#19Integrated circuit comprising an NLDMOS transistor
#20Semiconductor device and method of forming the same
#21Semiconductor device
#22Memory cell comprising first and second transistors and methods of operating
#23Integrated chemical sensor
#24Semiconductor device
#25Back ballasted vertical NPN transistor
#26Heavily doped buried layer to reduce MOSFET off capacitance
#27Memory device having electrically floating body transistor
#28Semiconductor device
#29Silicon carbide semiconductor device integrating clamper circuit for clamping voltage
#30Gate Contact Structure for a Semiconductor Device
#31Driver for driving a capacitive load
#32Power device integration on a common substrate
#33Semiconductor device and method of manufacturing semiconductor device
#34Back ballasted vertical NPN transistor
#35Memory device having electrically floating body transistor
#36Memory cell comprising first and second transistors and methods of operating
#37High voltage ESD protection apparatus
#38Hybrid cascode constructions with multiple transistor types
#39Semiconductor integrated circuit for driving switching device with integrated negative voltage clamp diode
#40Semiconductor device including a gate contact structure
#41Memory device having electrically floating body transistor
#42Power device integration on a common substrate
#43Avalanche diode having an enhanced defect concentration level and method of making the same
#44Semiconductor device
#45Power device on bulk substrate
#46Memory cell comprising first and second transistors and methods of operating
#47Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base
#48FET—bipolar transistor combination
#49Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors
#50Hybrid bipolar junction transistor
#51Electronic circuits including diode-connected bipolar junction transistors
#52Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer
#53Power device integration on a common substrate
#54High voltage ESD protection apparatus
#55Avalanche diode having an enhanced defect concentration level and method of making the same
#56Hybrid bipolar junction transistor
#57Surrounded emitter bipolar device
#58Integrated transistor structure having a power transistor and a bipolar transistor
#59Vertical bipolar junction transistor and manufacturing method thereof
#60Hybrid bipolar junction transistor
#61Diode-connected bipolar junction transistors and electronic circuits including the same
#62Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
#63TRANSIENT VOLTAGE SUPPRESSION DEVICE AND MANUFACTURING METHOD THEREOF
#64Semiconductor array having temperature-compensated breakdown voltage
#65Triode
#66Triode
#67Techniques for providing a direct injection semiconductor memory device
#68High-voltage metal-insulator-semiconductor field effect transistor structures
#69Programmable SCR for ESD protection
#70Layout structure of heterojunction bipolar transistors
#71Avalanche diode having an enhanced defect concentration level and method of making the same
#72Power device integration on a common substrate
#73SEMICONDUCTOR DEVICE
#74Semiconductor device comprising a diode and a method for producing such a device
#75Semiconductor structures and methods of manufacture
#76Power device integration on a common substrate
#77Tunnel transistor with high current by bipolar amplification
#78Semiconductor device
#79Bipolar junction transistor with improved avalanche capability
#80Power bipolar structure, in particular for high voltage applications
#81Semiconductor device
#82High voltage ESD protection apparatus
#83High voltage bipolar transistor with trench field plate
#84Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
#85Techniques for controlling a direct injection semiconductor memory device
#86High-voltage bipolar transistor with trench field plate
#87Semiconductor device
#88DRAM memory cell having a vertical bipolar injector
#89Integrated circuit
#90Memory cell with a channel buried beneath a dielectric layer
#91Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
#92Power switching devices having controllable surge current capabilities
#93Techniques for controlling a direct injection semiconductor memory device
#94Techniques for providing a direct injection semiconductor memory device having ganged carrier injection lines
#95Techniques for providing a direct injection semiconductor memory device
#96Semiconductor device
#97Avalanche diode having an enhanced defect concentration level and method of making the same
#98Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
#99Emitter-switched power actuator with integrated Zener diode between source and base
#100Bipolar power transistor and related integrated device with clamp means of the collector voltage
#101A hybrid bypolar-mos trench gate semiconductor device
#102Semiconductor device
#103Semiconductor device and method of manufacturing the same
#104Integrated circuit
#105Bipolar transistor, oscillation circuit, and voltage controlled oscillator
#106III-V lateral bipolar integration with silicon
#107Parasitic lateral bipolar transistor with improved ideality and leakage currents
#108Semiconductor device having field plate disposed on isolation feature and method for forming the same
#109Semiconductor device
#110Semiconductor device