208435 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Transistor-type devices, i.e. able to continuously respond to applied control signals; Bipolar junction transistors Schottky transistors
SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES
#2Asymmetric semiconductor memory device having electrically floating body transistor
#3Bipolar junction device
#4SEMICONDUCTOR TRIODE
#5Bipolar junction device
#6Bipolar junction device
#7Asymmetric semiconductor memory device having electrically floating body transistor
#8Asymmetric semiconductor memory device having electrically floating body transistor
#9Semiconductor triode
#10Asymmetric semiconductor memory device having electrically floating body transistor
#11Asymmetric semiconductor memory device having electrically floating body transistor
#12Methods of manufacturing superjunction devices
#13Method for manufacturing a silicon carbide device and a silicon carbide device
#14Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
#15Asymmetric semiconductor memory device having electrically floating body transistor
#16Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production
#17Schottky barrier quantum well resonant tunneling transistor
#18Nanometer-scale semiconductor devices and method of making
#19Power semiconductor packaging and manufacturing method thereof