208436 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Transistor-type devices, i.e. able to continuously respond to applied control signals; Bipolar junction transistors Tunnel transistors
SEMICONDUCTOR DEVICE
#2ELECTRONIC COMPONENTS EMPLOYING FIELD IONIZATION
#3Tunneling Field Effect Transistor and Manufacturing Method Thereof, Display Panel and Display Apparatus
#4Bipolar nanocomposite semiconductors
#5TUNNELING TRANSISTOR
#6Tunneling field effect transistor and semiconductor device including the same
#7AMORPHOUS METAL THIN FILM TRANSISTORS
#8Vertical tunnel field-effect transistor with u-shaped gate and band aligner
#9VERTICAL TUNNELING FIELD-EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
#10Vertical tunnel field-effect transistor with U-shaped gate and band aligner
#11Staggered-type tunneling field effect transistor
#12Staggered-type tunneling field effect transistor
#13Staggered-type tunneling field effect transistor
#14Staggered-type tunneling field effect transistor
#15Amorphous metal thin film transistors
#16Tunneling Junction Transistor
#17Vertical transistor gated diode
#18Method for manufacturing tunnel field effect transistor
#19Graphene double-barrier resonant tunneling device
#20Semiconductor device including two-dimensional material
#21Staggered-type tunneling field effect transistor
#22Tunneling field effect transistor (TFET) with ultra shallow pockets formed by asymmetric ion implantation and method of making same
#23Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
#24Electronic device and method of manufacturing the same
#25DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICONDUCTOR DEVICE
#26Tunneling field effect transistor
#27Methods for producing a tunnel field-effect transistor
#28Gate tunable tunnel diode
#29Strip-shaped gate tunneling field effect transistor with double-diffusion and a preparation method thereof
#30Tunneling devices and methods of manufacturing the same
#31Amorphous multi-component metallic thin films for electronic devices
#32Tunneling field effect transistor (TFET) with ultra shallow pockets formed by asymmetric ion implantation and method of making same
#33Gate tunable tunnel diode
#34Gate tunable tunnel diode
#35Methods for producing a tunnel field-effect transistor
#36Methods for producing a tunnel field-effect transistor
#37Hybrid plasma-semiconductor electronic and optical devices
#38Amorphous multi-component metallic thin films for electronic devices
#39TUNNEL DEVICE
#40Method of manufacturing an electronic device including a PNP bipolar transistor
#41Method for producing a field-effect transistor, field-effect transistor and integrated circuit arrangement
#42Thin-Film Transistors Based on Tunneling Structures and Applications
#43Heterjunction bipolar transistor with tunnelling mis emitter junction
#44High speed electron tunneling devices
#45Thin-film transistors based on tunneling structures and applications
#46Vertical transistor gated diode