208437 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Transistor-type devices, i.e. able to continuously respond to applied control signals; Bipolar junction transistors Avalanche transistors
Latch-up test structure
#2Single electron transistor triggered by photovoltaic diode
#3Semiconductor device including semiconductor substrate, silicon carbide semiconductor layer, first electrode and second electrode
#4Power device on bulk substrate
#5Semiconductor device for measuring ultra small electrical currents and small voltages
#6Radiation-emitting semiconductor device and method of manufacturing such a device