208466 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors using static field induced regions, e.g. SIT, PBT
SIC STATIC INDUCTION TRANSISTOR WITH DOUBLE SIDE COOLING AND METHOD OF MANUFACTURE
#2Lateral fin static induction transistor
#3SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED SURFACE ROUGHNESS
#4Dynamically doped field-effect transistor and a method for controlling such
#5Crystalline semiconductor film, plate-like body and semiconductor device
#6Lateral fin static induction transistor
#7Insulated-gate semiconductor device and method of manufacturing the same
#8Crystalline semiconductor film, plate-like body and semiconductor device
#9HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
#10Lateral fin static induction transistor
#11Lateral fin static induction transistor
#12Programmable tunnel thermionic mode transistor
#13Switching circuit and high frequency module
#14Crystalline semiconductor film, plate-like body and semiconductor device
#15Semiconductor device
#16Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor
#17Crystalline multilayer structure and semiconductor device
#18Crystalline multilayer structure and semiconductor device
#19MEMS device and method of forming the same
#20SELF-ALIGNED SEMICONDUCTOR DEVICES WITH REDUCED GATE-SOURCE LEAKAGE UNDER REVERSE BIAS AND METHODS OF MAKING
#21STATIC INDUCTION TRANSISTOR WITH DIELECTRIC CARRIER SEPARATION LAYER
#22VOLTAGE SUSTAINING LAYER WIHT OPPOSITE-DOPED ISLAND FOR SEMINCONDUCTOR POWER DEVICES
#23Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
#24Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
#25Electronic device comprising static induction transistor and thin film transistor, method of manufacturing an electronic device and display panel
#26BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#27Semiconductor devices and methods for making the same
#28SILICON CARBIDE DUAL-MESA STATIC INDUCTION TRANSISTOR
#29Insulated gate silicon carbide semiconductor device and method for manufacturing the same
#30Semiconductor device having a junction of P type pillar region and N type pillar region
#31Semiconductor structure with an electric field stop layer for improved edge termination capability
#32Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
#33Single-chip common-drain JFET device and its applications
#34Single-chip common-drain JFET device and its applications
#35Single-chip common-drain JFET device and its applications
#36Single-chip common-drain JFET device and its applications
#37Single-chip common-drain JFET device and its applications
#38Vertical resistors
#39Method for forming voltage sustaining layer with opposite-doped islands for semiconductor power devices
#40Method for manufacturing junction semiconductor device
#41GaN-based permeable base transistor and method of fabrication
#42Insulated gate silicon carbide semiconductor device and method for manufacturing the same
#43Insulated gate silicon carbide semiconductor device
#44TUNGSTEN INTERCONNECT SUPER STRUCTURE FOR SEMICONDUCTOR POWER DEVICES
#45Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
#46Method of making a self aligned ion implanted gate and guard ring structure for use in a sit
#47Voltage sustaining layer with opposite-doped islands for semiconductor power devices
#48Semiconductor device having superjunction structure formed of p-type and n-type pillar regions
#49SEMICONDUCTOR DEVICE
#50Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove
#51Structure and method for a fast recovery rectifier structure
#52Semiconductor device with a conduction enhancement layer
#53Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
#54High-breakdown-voltage semiconductor device
#55Method for manufacturing junction semiconductor device
#56Junction semiconductor device and method for manufacturing the same
#57Voltage sustaining layer with opposite-doped islands for semiconductor power devices
#58GaN-based permeable base transistor and method of fabrication
#59Power semiconductor switching element
#60Semiconductor device including a vertical field effect transistor, having trenches, and a diode
#61High voltage FET switch with conductivity modulation
#62Semiconductor device
#63Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each groove
#64Short channel insulated-gate static induction transistor and method of manufacturing the same
#65Single-chip common-drain JFET device and its applications
#66Semiconductor device
#67Vertical resistors and band-gap voltage reference circuits
#68Semiconductor device
#69Transverse junction field effect transistor
#70Semiconductor high-voltage devices
#71High-breakdown-voltage semiconductor device
#72High-breakdown-voltage semiconductor device
#73Static induction transistor, method of manufacturing same and electric power conversion apparatus
#74Power semiconductor devices having linear transfer characteristics when regions therein are in velocity saturation modes and methods of forming and operating same
#75Power conversion apparatus
#76Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor