208467 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with delta-doped channel
LACING SYSTEM WITH GUIDE ELEMENTS
#2LACING SYSTEM WITH GUIDE ELEMENTS
#3Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)
#4Quantum doping method and use in fabrication of nanoscale electronic devices
#5Diamond based current aperture vertical transistor and methods of making and using the same
#6Process of making a III-V compound semiconductor heterostructure MOSFET
#7III-V compound semiconductor heterostructure MOSFET device
#8Semiconductor device including a superlattice having at least one group of substantially undoped layers
#9Semiconductor device and method for manufacturing same
#10Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)
#11Quantum doping method and use in fabrication of nanoscale electronic devices