208468 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors Velocity modulation transistors, i.e. VMT
Semiconductor devices including gate spacer
#2Barrier Modulating Transistor
#3Network device having transistors employing charge-carrier mobility modulation to drive operation beyond transition frequency
#4Semiconductor devices including gate spacer
#5Dual channel/gate vertical field-effect transistor (FET) for use with a perpendicular magnetic tunnel junction (PMTJ)
#6Methods and systems for ultra-high quality gated hybrid devices and sensors
#7Solid state cloaking for electrical charge carrier mobility control
#8Negative resistance field effect device and high-frequency oscillation device