208475 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
#2NITRIDE SEMICONDUCTOR DEVICE
#3NITRIDE SEMICONDUCTOR DEVICE
#4Semiconductor layer structure
#5Driving circuit, driving IC, and driving system
#6Semiconductor layer structure
#7Manufacturing method for semiconductor device
#8Nitride semiconductor device
#9Three dimensional vertically structured electronic devices
#10Three dimensional vertically structured electronic devices
#11Semiconductor device and manufacturing method thereof
#12Field-effect transistors with channel regions that include a two-dimensional material on a mandrel
#13High electron mobility transistor (HEMT) devices and methods
#14Nitride semiconductor device
#15Semiconductor structure for improving thermal stability and Schottky behavior
#16GaN lateral vertical HJFET with source-P block contact
#17Lateral high electron mobility transistor with integrated clamp diode
#18Semiconductor device and method of manufacturing semiconductor device
#19Gallium nitride transistor
#20Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
#21Semiconductor device
#22Semiconductor device
#23Device comprising 2D material
#24Method of fabricating device including two-dimensional material
#25Method of fabricating device including two-dimensional material
#26MUTILAYER STRUCTURE CONTAINING A CRYSTAL MATCHING LAYER FOR INCREASED SEMICONDUCTOR DEVICE PERFORMANCE
#27Semiconductor device and method for manufacturing the same
#28Semiconductor device
#29Forming of a MOS transistor based on a two-dimensional semiconductor material
#30Nitride semiconductor device
#31Semiconductor device and manufacturing method of semiconductor device
#32Lateral high electron mobility transistor with integrated clamp diode
#33FinFETs with strained well regions
#34Nitride semiconductor device
#35FinFETs with strained well regions
#36FinFETs with strained well regions
#37Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
#38Three dimensional vertically structured electronic devices
#39Three dimensional vertically structured MISFET/MESFET
#40Three dimensional vertically structured electronic devices
#41Method for producing trench high electron mobility devices
#42Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
#43Non-volatile memory devices and manufacturing methods thereof
#44FIELD EFFECT DIODE AND METHOD OF MANUFACTURING THE SAME
#45Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
#46FinFETs with strained well regions
#47Method of fabricating transient semiconductor based on single-wall nanotube
#48Method of making a three-dimensional memory device having a heterostructure quantum well channel
#49High electron mobility transistor (HEMT) and method of fabrication
#50Nitride semiconductor device
#51III-nitride transistor with trench gate
#52Method of manufacturing enhanced device and enhanced device
#53FinFETs with strained well regions
#54Compound semiconductor device and manufacturing method of the same
#55Group III nitride semiconductor device which can be used as a power transistor
#563D UTB transistor using 2D-material channels
#57Process for integrated circuit fabrication including a liner silicide with low contact resistance
#58Non-planar normally off compound semiconductor device
#59METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM WELLS
#60METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM WELLS
#61FinFETs with strained well regions
#62High electron mobility semiconductor device and method therefor
#63Compound semiconductor device and method for fabricating the same
#64Field effect transistor
#65FinFETs with strained well regions
#66Thin film transistor and method for producing same
#67Area efficient field effect device
#68Non-volatile memory devices and manufacturing methods thereof
#69FinFETs with strained well regions
#70Semiconductor device including a trench with a corner having plural tapered portions
#71Semiconductor device and fabrication method thereof
#72Semiconductor device and fabrication method thereof
#73Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
#74Semiconductor device having carrier extraction in electric field alleviating layer
#75Two-dimensional material containing electronic components
#76High electron mobility semiconductor device and method therefor
#77FinFETs with strained well regions
#78High mobility, thin film transistors using semiconductor/insulator transition-metal dichalcogenide based interfaces
#79FinFETs with strained well regions
#80Semiconductor device
#81Three-dimensional quantum well transistor and fabrication method
#82High electron mobility transistor and manufacturing method thereof
#83SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
#84Nitride semiconductor device and method for manufacturing same
#85Vertical microelectronic component and corresponding production method
#86GaN dual field plate device with single field plate metal
#87Semiconductor stacked body, method for manufacturing same, and semiconductor element
#88Gallium nitride devices having low ohmic contact resistance
#89Compound semiconductor device and method for manufacturing the same
#90Non-planar III-N transistor
#91Semiconductor device and method for producing the same
#92Nitride semiconductor device
#93Semiconductor device and method for producing the same
#94Semiconductor device and method for producing same
#95Semiconductor device and method for producing the same
#96Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same
#97Rotated channel semiconductor field effect transistor
#98Vertical GaN-based semiconductor device
#99Compound semiconductor device and manufacturing method of the same
#100Compound semiconductor device and method for fabricating
#101High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same
#102Vertical field effect transistor on oxide semiconductor substrate
#103Lateral trench MESFET
#104Lateral trench MESFET
#105Semiconductor device and method for manufacturing same
#106Nanowire and larger GaN based HEMTs
#107Semiconductor device and method for manufacturing same
#108NANOSTRUCTURE ARRAY TRANSISTOR
#109Semiconductor device and method for manufacturing same
#110SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
#111Nanowire and larger GaN based HEMTS
#112Semiconductor device and method for producing the same
#113Field effect transistor with access region recharge
#114Method for fabricating semiconductor device
#115Semiconductor device having hetero junction
#116All around gate type semiconductor device and method of manufacturing the same
#117Normally-off field-effect semiconductor device
#118Field effect transistor having semiconductor operating layer formed with an inclined side wall
#119Nitride semiconductor device with a vertical channel and method for producing the nitride semiconductor device
#120Method of fabrication of normally-off field-effect semiconductor device
#121III-nitride semiconductor device with trench structure
#122Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
#123III-nitride power semiconductor device
#124HEMT including MIS structure
#125Group III nitride based semiconductor device having trench structure or mesa structure and production method therefor
#126Semiconductor device
#127Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
#128Trench type MOSgated device with strained layer on trench sidewall
#129Integrated III-nitride devices
#130Heterostructure field effect transistor and associated method
#131Low leakage heterojunction vertical transistors and high performance devices thereof
#132Vertical heterostructure field effect transistor and associated method
#133Semiconductor device and manufacturing method thereof
#134Semiconductor device and fabrication method of the same
#135Non-planar III-nitride power device having a lateral conduction path
#136HEMT device and method of making
#137III-nitride semiconductor device with trench structure
#138Trench type mosgated device with strained layer on trench sidewall
#139GaN-based field effect transistor of a normally-off type
#140Semiconductor device with multiple carrier channels
#141Integrated circuit including a liner silicide with low contact resistance
#142Double heterojunction group III-nitride structures