208477 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
INSULATED TRENCH GATE WITH MULTIPLE LAYERS FORM IMPROVED PERFORMANCE OF SEMICONDUCTOR DEVICES
#2Silicon carbide semiconductor device
#3EDMOS AND FABRICATING METHOD OF THE SAME
#4METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM
#5SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
#6SEMICONDUCTOR DEVICE
#7MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE
#8SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
#9SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
#10METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
#11Semiconductor structure including source/drain regions at different levels within semiconductor layer and method of manufacture
#12Semiconductor device with controllable channel length and manufacturing method thereof
#13High voltage semiconductor device and manufacturing method thereof
#14FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION
#15Power semiconductor
#16Power transistor cell and power transistor having field shielding contacting areas connecting field shielding areas to metal areas
#17Semiconductor protection circuit
#18SOURCE & DRAIN DOPANT DIFFUSION BARRIERS FOR N-TYPE GERMANIUM TRANSISTORS
#19Semiconductor device with controllable channel length and manufacturing method thereof
#20Fin field effect transistor with merged drift region
#21HIGH-POWER FIELD-EFFECT TRANSISTOR (FET)
#22Insulated trench gates with multiple layers for improved performance of semiconductor devices
#23FET device insensitive to noise from drive path
#24Semiconductor device with a passivation layer and method for producing thereof
#25Semiconductor device with low random telegraph signal noise
#26Field-effect transistor and method for designing same
#27Power semiconductor device with p-contact and doped insulation blocks defining contact holes
#28Polysilicon structure including protective layer
#29Semiconductor chip contact structure, device assembly, and method of fabrication
#30High voltage semiconductor device and manufacturing method thereof
#31Generating milled structural elements with a flat upper surface
#32Semiconductor device with controllable channel length and manufacturing method thereof
#33Wide gap semiconductor device
#34Semiconductor device
#35Power semiconductor
#36Semiconductor device and method for manufacturing same
#37Silicon carbide semiconductor device and power conversion device
#38Semiconductor device with low random telegraph signal noise
#39Integrated stacked ESD network in trench for trench DMOS
#40Power semiconductor device with reliably verifiable p-contact and method
#41Gate Contact Structure for a Semiconductor Device
#42Variable speed drive for a HVACandR system
#43Method for manufacturing semiconductor device, and power conversion device
#44Semiconductor device and method of manufacturing the same
#45Semiconductor device with low random telegraph signal noise
#46Method of producing semiconductor device
#47SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#48Semiconductor device with a passivation layer and method for producing thereof
#49Method and apparatus for power device with multiple doped regions
#50Method of manufacturing a power semiconductor device
#51Electrical drive system
#52Method of producing semiconductor device for reducing variations of device characteristics within a surface of a semiconductor wafer
#53Silicon carbide semiconductor device and method for manufacturing the same
#54Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications
#55Semiconductor devices and methods for manufacturing the same
#56Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#57Semiconductor switch device and method having at least two contacts located on either the source region or the drain region
#58Silicon carbide MOSFET device and method for manufacturing the same
#59Polysilicon structure including protective layer
#60Gate-less electrostatic discharge systems and methods for forming
#61Silicon carbide semiconductor device
#62Negative voltage tolerant IO circuitry for IO pad
#63Method for processing a semiconductor workpiece and semiconductor device
#64Semiconductor device having electro-static discharge protection structure
#65Semiconductor device including a gate contact structure
#66TUNNEL FINFET WITH SELF-ALIGNED GATE
#67Semiconductor epitaxial wafer, semiconductor device, and method of producing semiconductor device
#68Semiconductor device with dummy pattern in high-voltage region and method of forming the same
#69Method of manufacturing semiconductor device
#70Semiconductor device
#71Semiconductor device and power conversion device
#72SILICON CARBIDE SEMICONDUCTOR DEVICE
#73Power semiconductor device
#74Sensor for a semiconductor device
#75Semiconductor devices and methods for manufacturing the same
#76Method of fabricating a power semiconductor device
#77Method of manufacturing a semiconductor device comprising a support element and semiconductor device comprising a support element
#78Dimension regulation of power device to eliminate hot spot generation
#79Semiconductor device comprises two or more regions that have a same impurity concentration and differing carrier concentrations
#80Electronic component and switch circuit
#81Method and apparatus for power device with multiple doped regions
#82Power converter package with integrated output inductor
#83POWER TRANSISTOR DEVICE AND PROTECTION METHOD THEREFOR
#84High speed, efficient SiC power module
#85Power semiconductor device edge structure
#86Semiconductor to metal transition for semiconductor devices
#87Semiconductor Device and Manufacturing Method
#88Semiconductor device
#89Sensor for a semiconductor device
#90Manufacturing method of semiconductor device and semiconductor device
#91MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array
#92Ultrahigh voltage resistor, semiconductor device, and the manufacturing method thereof
#93Semiconductor to metal transition
#94High voltage double-diffused MOS (DMOS) device and method of manufacture
#95High voltage double-diffused MOS (DMOS) device and method of manufacture
#96Semiconductor device and method of manufacturing the same
#97Integrated circuit device and electronic appliance
#98Integrating Schottky diode into power MOSFET
#99Manufacturing method of semiconductor device and semiconductor device
#100Method for forming MOS device passivation layer and MOS device
#101Method of operating channel buffer block and devices including the channel buffer block
#102Semiconductor device including a phase change material
#103Semiconductor Device with a Passivation Layer and Method for Producing Thereof
#104Latch-up immunity nLDMOS
#105Circuit device and electronic apparatus
#106Semiconductor device and semiconductor device manufacturing method
#107Semiconductor device and semiconductor device manufacturing method
#108High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift region
#109Method of making protective layer over polysilicon structure
#110High voltage double-diffused MOS (DMOS) device and method of manufacture
#111Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body
#112Wide band gap semiconductor apparatus and fabrication method thereof
#113Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex
#114Trench gate trench field plate semi-vertical semi-lateral MOSFET
#115Semiconductor device and method of manufacturing the same
#116Semiconductor component having a passivation layer and production method
#117High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift region
#118Metal-oxide-semiconductor (MOS) devices with increased channel periphery
#119Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
#120Semiconductor device with a field plate trench having a thick bottom dielectric
#121Semiconductor device with a field plate double trench having a thick bottom dielectric
#122High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#123Process of forming an electronic device including a vertical conductive structure
#124Semiconductor device and manufacturing method of semiconductor device
#125Methods for producing near zero channel length field drift LDMOS
#126Semiconductor device and semiconductor device manufacturing method
#127SEMICONDUCTOR DEVICE HAVING ESD PROTECTION STRUCTURE AND ASSOCIATED METHOD FOR MANUFACTURING
#128Latch-up immunity nLDMOS
#129Semiconductor device including a high breakdown voltage DMOS and method of manufacturing the same
#130Semiconductor device and manufacturing method of the same
#131Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor body
#132SEMICONDUCTOR DEVICE
#133Semiconductor devices including bipolar transistors, CMOS transistors and DMOS transistors, and methods of manufacturing the same
#134Semiconductor devices and methods of forming the same
#135Monolithically integrated circuit
#136High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#137Integrating Schottky diode into power MOSFET
#138Near zero channel length field drift LDMOS
#139Semiconductor component with a space saving edge structure
#140POWER SEMICONDUCTOR DEVICES
#141Insulated gate field effect transistors
#142Semiconductor device with integrated trench lateral power MOSFETs and planar devices
#143Method of manufacturing semiconductor device having improved RESURF Trench isolation and method of evaluating manufacturing method
#144Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same
#145METHOD OF DRIVING A DUAL GATED MOSFET
#146Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistor
#147Semiconductor apparatus
#148Structure for an LDMOS transistor and fabrication method thereof
#149Semiconductor device and method for manufacturing the same
#150Trench lateral power MOSFET and a method of manufacturing the same
#151Semiconductor device and method for fabricating such device
#152Method for making reduced size DMOS transistor and resulting DMOS transistor
#153Reverse-connect protection circuit with a low voltage drop
#154Graded conductive structure for use in a metal-oxide-semiconductor device
#155Semiconductor device and method of manufacture thereof
#156Method of forming a MOS-controllable power semiconductor device for use in an integrated circuit
#157Semiconductor device and method of forming a semiconductor device
#158Trench-gate semiconductor device and method of manufacturing
#159Semiconductor device and method for fabricating such device
#160Method of fabricating high voltage device using double epitaxial growth
#161Integrated semiconductor circuit having a logic and power metallization without intermetal dielectric
#162Shrunk low on-resistance DMOS structure
#163Method of driving a dual gated MOSFET
#164Semiconductor device and fabricating method thereof
#165MOS field effect transistor with reduced on-resistance
#166Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same
#167System for high-precision double-diffused MOS transistors
#168Lateral low-side and high-side high-voltage devices
#169Metal-oxide-semiconductor device having improved gate arrangement
#170Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor
#171Semiconductor device with integrated trench lateral power MOSFETs and planar devices
#172Semiconductor device
#173Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench
#174Semiconductor device having high withstand capacity and method for designing the same
#175Super junction / resurf LDMOST (SJR-LDMOST)
#176High voltage metal-oxide semiconductor device
#177Power semiconductor devices having linear transfer characteristics when regions therein are in velocity saturation modes and methods of forming and operating same
#178Method of manufacturing a semiconductor device
#179RF controlled switch box without using neutral wire and a power harvesting switch circuit thereof
#180Semiconductor device and method of making
#181Vertical semiconductor device having frontside interconnections