208479 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate comprising a gate to body connection, i.e. bulk dynamic threshold voltage MOSFET
METHODS AND APPARATUS TO PROVIDE WELDING POWER
#2CIRCUIT ARRANGEMENT, SEMICONDUCTOR MODULE, ELECTRICAL SYSTEM, AND METHOD FOR OPTICALLY OUTPUTTING INFORMATION WITH THE AID OF A MOSFET
#3PCB LAND PAD FOR THREE-PIN MOSFET COMPONENT
#4CURRENT SENSING IN NON-CMOS SEMICONDUCTOR TECHNOLOGY FOR POWER CONVERSION APPLICATIONS
#5SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#6INTEGRATED CIRCUITS WITH SELF-ALIGNED TUB ARCHITECTURE
#7SEMICONDUCTOR DEVICE
#8Receiver control circuit and terminal
#9Gate contact structures and cross-coupled contact structures for transistor devices
#10SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#11Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same
#12Methods and apparatus to provide welding power
#13Vertical transistor with body contact
#14Semiconductor device
#15Semiconductor structure and manufacturing method thereof
#16Semiconductor device having conducting member for electrically coupling gate structure to underlying substrate of SOI structure
#17Vertical transistor with body contact fabrication
#18Gate contact structures and cross-coupled contact structures for transistor devices
#19Body contact in fin field effect transistor design
#20Multi-channel device to improve transistor speed
#21High speed buffer circuit
#22Semiconductor structure and manufacturing method thereof
#23Semiconductor device
#24Body contact in Fin field effect transistor design
#25Poly gate extension source to body contact
#26Wide contact structure for small footprint radio frequency (RF) switch
#27Methods of forming gate contact structures and cross-coupled contact structures for transistor devices
#28Methods and apparatus to provide welding power
#29Vertical transistor with a body contact for back-biasing
#30Electrostatic discharge (ESD) protection device and method for operating an ESD protection device
#31SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
#32Tight pitch inverter using vertical transistors
#33Poly gate extension source to body contact
#34Integrated circuit structure without gate contact and method of forming same
#35Device having an active channel region
#36Semiconductor integrated circuit device
#37Transistor having an active channel region
#38Vertical high-voltage MOS transistor
#39Dynamic threshold MOS and methods of forming the same
#40FIELD-EFFECT TRANSISTORS WITH BODY DROPDOWNS
#41Vertical high-voltage MOS transistor and method of forming the same
#42Dynamic threshold MOS and methods of forming the same
#43Semiconductor device and method of manufacturing the same
#44Silicon-on-insulator integrated circuit devices with body contact structures
#45Method and structure to reduce FET threshold voltage shift due to oxygen diffusion
#46Body-contact metal-oxide-semiconductor field effect transistor device
#47Semiconductor device
#48Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
#49Device active channel length/width greater than channel length/width
#50Semiconductor device and fabrication process thereof
#51Method and structure to reduce FET threshold voltage shift due to oxygen diffusion
#52Semiconductor integrated circuit device including SRAM cell array and a wiring layer for supplying voltage to well regions of SRAM cells provided on a region exterior of SRAM cell array
#53Semiconductor device production method and semiconductor device
#54Semiconductor integrated circuit device including SRAM memory cells having two P-channel MOS transistors and four N-channel MOS transistors and with four wiring layers serving as their gate electrodes
#55Electronic circuit having a diode-connected MOS transistor with an improved efficiency
#56Methods of forming semiconductor devices having self-aligned bodies
#57Semiconductor integrated circuit device
#58Flat panel display
#59Method of forming a transistor having gate and body in direct self-aligned contact
#60Field-effect transistor, its manufacturing method, and complementary field-effect transistor
#61Semiconductor devices having self-aligned bodies and methods of forming the same
#62Semiconductor integrated circuit device
#63Semiconductor integrated circuit device
#64Dynamic threshold voltage MOSFET on SOI
#65Semiconductor device and method for fabricating the same
#66MISFET for reducing leakage current
#67Flat panel display
#68Gate shorted to body thin film transistor, manufacturing method thereof, and display including the same
#69Method for manufacturing golf club head
#70Integrated circuit structure without gate contact and method of forming same
#71Vertical transistor with a body contact for back-biasing
#72Super junction MOSFET with integrated channel diode