208496 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
Magnetic random access memory with field compensating layer and multi-level cell
#302Magnetic tunnel junction with spacer layer for spin torque switched MRAM
#303Magnetic element with improved out-of-plane anisotropy for spintronic applications
#304Pinning field in MR devices despite higher annealing temperature
#305Semiconductor device
#306ROOM TEMPERATURE QUANTUM FIELD EFFECT TRANSISTOR COMPRISING A 2-DIMENSIONAL QUANTUM WIRE ARRAY BASED ON IDEALLY CONDUCTING MOLECULES
#307Field-effect magnetic sensor
#308Storage nodes, magnetic memory devices, and methods of manufacturing the same
#309MAGNETIC-ELECTRIC ENERGY CONVERSION DEVICE, POWER SUPPLY DEVICE, AND MAGNETIC SENSOR
#310Apparatus and method for reducing a transient signal in a magnetic field sensor
#311Spin torque transfer memory cell structures and methods
#312Magnetoresistive effect element, magnetic memory
#313Spin injection electrode structure, spin transport element, and spin transport device
#314Magnetic memory device and method of manufacturing the same
#315MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
#316Semiconductor memory and manufacturing method thereof
#317Magnetic tunnel junction device
#318Peptide nanostructures encapsulating a foreign material and method of manufacturing same
#319MR enhancing layer (MREL) for spintronic devices
#320Semiconductor devices including gate structures comprising colossal magnetocapacitive materials
#321Flux-closed STRAM with electronically reflective insulative spacer
#322Semiconductor memory device
#323Sidewall coating for non-uniform spin momentum-transfer magnetic tunnel junction current flow
#324Magnetic floating gate memory
#325Magnetic random access memory and initializing method for the same
#326Magnetic tunnel junction structure
#327InSb-based switching device
#328Sidewall coating for non-uniform spin momentum-transfer magnetic tunnel junction current flow
#329Spin transistor and method of operating the same
#330Magnetic tunnel junction transistor
#331Magnetic tunnel junction transistor
#332Bit-patterned stack with antiferromagnetic shell
#333Magnetic random access memory, write method therefor, and magnetoresistance effect element
#334Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ
#335Magnetic floating gate memory
#336Integrated electronic device with transceiving antenna and magnetic interconnection
#337Flux-closed STRAM with electronically reflective insulative spacer
#338MAGNETIC MEMORY ELEMENT, AND METHOD OF MANUFACTURING MEMORY ELEMENT
#339AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE
#340Forming a self-aligned hard mask for contact to a tunnel junction
#341Magnetic tunnel junction transistor
#342Array structural design of magnetoresistive random access memory (MRAM) bit cells
#343Hall-effect device with merged and/or non-merged complementary structure
#344Peptide nanostructures encapsulating a foreign material and method of manufacturing same
#345Spin field effect transistor using half metal and method of manufacturing the same
#346Apparatus for storing electrical energy
#347Magnetic sensor and manufacturing method therefor
#348Hermetic packaging and method of manufacture and use therefore
#349Patterned material layer, method of forming the same, microdevice, and method of manufacturing the same
#350Method of fabricating a magnetic shift register
#351Highly charged ion modified oxide device and method of making same
#352Magneto-resistance transistor and method thereof
#353SEMICONDUCTOR DEVICE
#354Thin-Film Transistors Based on Tunneling Structures and Applications
#355Method of fabricating a magnetic shift register
#356Electro-magnetic storage device and method
#357Magneto-resistance transistor and method thereof
#358High speed low power annular magnetic devices based on current induced spin-momentum transfer
#359Field-effect transistor
#360High speed electron tunneling devices
#361Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
#362Peptide nanostructures encapsulating a foreign material and method of manufacturing same
#363Magneto-resistance transistor and method thereof
#364High speed low power magnetic devices based on current induced spin-momentum transfer
#365Field-effect transistor
#366Thin-film transistors based on tunneling structures and applications
#367Magnetoresistive device and electronic device
#368Magnetic field effect transistor, latch and method
#369High speed low power magnetic devices based on current induced spin-momentum transfer
#370System and method of fabricating micro cavities
#371MRAM with voltage dependent in-plane magnetic anisotropy
#372Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors
#373Linear magnetoresistive random access memory device with a self-aligned contact above MRAM nanowire
#374Magnetic recording head with CPP-GMR spin-valve sensor and extended pinned layer