H01L29/8615 - CPC Classification Index

ClassID:

208503 ⎘

H01L29/8615 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched; Diodes Hi-lo semiconductor devices, e.g. memory devices

Recent Application in this class:

20230154975

2023-05-18

PIN DIODE INCLUDING A CONDUCTIVE LAYER, AND FABRICATION PROCESS

20210335994

2021-10-28

Pin diode including a conductive layer, and fabrication process

20210074825

2021-03-11

Selector devices

20210050384

2021-02-18

Crosspoint phase change memory with crystallized silicon diode access device

20200227517

2020-07-16

Pin diode including a conductive layer, and fabrication process

20180366591

2018-12-20

THRESHOLD SWITCHING DEVICE

20170162721

2017-06-08

Diode structure

20160087007

2016-03-24

Diode/superionic conductor/polymer memory structure

20150325310

2015-11-12

Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same

#10

20150302932

2015-10-22

Memory device, semiconductor unit and method of operating the same, and electronic apparatus

#11

20150255716

2015-09-10

Non-volatile resistive-switching memories

#12

20150097153

2015-04-09

Non-volatile resistive-switching memories

#13

20150048299

2015-02-19

Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the same

#14

20150028282

2015-01-29

Resistance switching device and process for producing thereof

#15

20150023082

2015-01-22

Semiconductor device and power conversion device using the same

#16

20150008387

2015-01-08

Self-selecting PCM device not requiring a dedicated selector transistor

#17

20140322887

2014-10-30

Surface treatment to improve resistive-switching characteristics

#18

20140203237

2014-07-24

Self-rectified device, method for manufacturing the same, and applications of the same

#19

20140203235

2014-07-24

Conductive bridge resistive memory device and method of manufacturing the same

#20

20140038352

2014-02-06

Non-volatile resistive-switching memories

#21

20130329499

2013-12-12

Memory cell string based on gated-diode cell and memory array using the same

#22

20120315725

2012-12-13

Surface treatment to improve resistive-switching characteristics

#23

20120305874

2012-12-06

Vertical diodes for non-volatile memory device

#24

20120280224

2012-11-08

METAL OXIDE STRUCTURES, DEVICES, AND FABRICATION METHODS

#25

20120280202

2012-11-08

Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride

#26

20120132883

2012-05-31

Resistive switching memory device

#27

20120113706

2012-05-10

Memristors based on mixed-metal-valence compounds

#28

20120088328

2012-04-12

Method of forming non-volatile resistive-switching memories

#29

20120085985

2012-04-12

Electrically actuated device

#30

20120063197

2012-03-15

Switchable junction with an intrinsic diode formed with a voltage dependent resistor

#31

20120032134

2012-02-09

Memristive junction with intrinsic rectifier

#32

20120032133

2012-02-09

Surface treatment to improve resistive-switching characteristics

#33

20110266513

2011-11-03

Semiconductor memristor devices

#34

20110260134

2011-10-27

Thermally Stable Nanoscale Switching Device

#35

20110169126

2011-07-14

In-situ passivation methods to improve performance of polysilicon diode

#36

20110155984

2011-06-30

Self-selecting PCM device not requiring a dedicated selector transistor

#37

20110149633

2011-06-23

Memory devices and methods of operating the same

#38

20110136326

2011-06-09

Pillar devices and methods of making thereof

#39

20110121359

2011-05-26

Multi-Layer Reconfigurable Switches

#40

20110114913

2011-05-19

Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride

#41

20110095287

2011-04-28

Nonvolatile memory device and nonvolatile memory array including the same

#42

20100184259

2010-07-22

Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon

#43

20100163821

2010-07-01

Vertical diode and method for manufacturing same and semiconductor memory device

#44

20090272961

2009-11-05

Surface treatment to improve resistive-switching characteristics

#45

20090272959

2009-11-05

Non-volatile resistive-switching memories

#46

20090268508

2009-10-29

Reverse leakage reduction and vertical height shrinking of diode with halo doping

#47

20090224244

2009-09-10

Patterning of submicron pillars in a memory array

#48

20090179310

2009-07-16

Pillar devices and methods of making thereof

#49

20090114896

2009-05-07

Memory device using abrupt metal-insulator transition and method of operating the same

#50

20090085025

2009-04-02

Memory device including resistance-changing function body

#51

20090072246

2009-03-19

Diode and memory device comprising the same

#52

20090067215

2009-03-12

Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage

#53