208504 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched; Diodes Charge trapping diodes
Electrostatic catalysis
#2Electrostatic catalysis
#3DENSE ARRAYS AND CHARGE STORAGE DEVICES
#4Organic EL device
#5Electrostatic catalysis
#6Dense arrays and charge storage devices
#7Dense arrays and charge storage devices
#8Detector comprising a variable capacitance diode
#9SEMICONDUCTOR DEVICE
#10Dense arrays and charge storage devices
#11Group III-V HEMT Having a Diode Controlled Substrate
#12Group III-V HEMT having a selectably floating substrate
#13Composite group III-V and group IV transistor having a switched substrate
#14Dense arrays and charge storage devices
#15Customizable nonlinear electrical devices
#16Memory cell string based on gated-diode cell and memory array using the same
#17Method for manufacturing a gate-control diode semiconductor memory device
#18FLASH MEMORY AND METHOD FOR FABRICATING THE SAME
#19Low leakage capacitor for analog floating-gate integrated circuits
#20Dense arrays and charge storage devices
#21Flash memory and fabrication method and operation method for the same
#22Semiconductor device with amorphous silicon MAS memory cell structure and manufacturing method thereof
#23TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY ELEMENT
#24Diode-based flash memory device cell string and fabricating method therefor
#25Method of fabricating a memory device having a memory array including a plurality of memory cell transistors arranged in rows and columns
#26DENSE ARRAYS AND CHARGE STORAGE DEVICES
#27Multi-Layer Reconfigurable Switches
#28Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
#29Memory cell, and method for storing data
#30Electrically isolated gated diode nonvolatile memory
#31Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereof
#32Fine particle-containing body, fine particle-containing body manufacturing method, storage element, semiconductor device and electronic equipment
#33Memory using variable tunnel barrier widths
#34Three terminal nonvolatile memory device with vertical gated diode
#35Gated diode nonvolatile memory cell array
#36Method of making memory cell with voltage modulated sidewall poly resistor
#37Nonvolatile Memory
#38Gated diode nonvolatile memory process
#39Gated diode nonvolatile memory structure with diffusion barrier structure
#40Gated diode nonvolatile memory process
#41Methods and devices for providing an amplitude estimate of a time varying signal
#42Gated diode nonvolatile memory cell array
#43Data storage nanostructures
#44Fine particle-containing body, fine-particle-containing body manufacturing method, storage element, semiconductor device and electronic equipment
#45Gated diode nonvolatile memory cell array
#46Gated diode nonvolatile memory cell
#47Gated diode nonvolatile memory process
#48Dense arrays and charge storage devices
#49Multi-level flash memory cell capable of fast programming
#50Charge trap insulator memory device
#51Memory using variable tunnel barrier widths
#52Integrated memory device having columns having multiple bit lines