208507 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched; Diodes Transit-time diodes, e.g. IMPATT, TRAPATT diodes
High-voltage fast-avalanche diode
#2Diode devices and methods of forming a diode device
#3Transient voltage suppression diodes with reduced harmonics, and methods of making and using
#4TRANSIENT SUPPRESSING CIRCUIT ARRANGEMENTS
#5Silicon IMPATT diode
#6Integration of the silicon IMPATT diode in an analog technology
#7High resistivity silicon wafer and method for manufacturing the same
#8DEVICE FOR CONTROLLING PHYSIOLOGICAL PROCESSES IN A BIOLOGICAL OBJECT
#9SEMICONDUCTOR DEVICE FOR GENERATING AN OSCILLATING VOLTAGE
#10High frequency diode and method for producing same
#11High frequency diode and method for producing same
#12Solid state energy converter
#13Intergrated semiconductor component for high-frequency measurement and use thereof
#14Integration of a baritt diode