212560 ⎘
Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Details of semiconductor or other solid state devices to be connected; Device type; Discrete devices, e.g. 3 terminal devices; Transistor; Field-effect transistor [FET] FinFET, source/drain region shapes fins on the silicon surface
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH
#2INTEGRATED CIRCUIT STRUCTURES AND METHODS OF MANUFACTURING THE SAME
#3FRONTSIDE FEEDTHROUGH CONNECTIONS
#4SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
#5SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME
#6Oscillator with Fin Field-Effect Transistor (FinFET) Resonator
#7SEMICONDUCTOR CHIP, SEMICONDUCTOR PACKAGE, AND SEMICONDUCTOR CHIP MANUFACTURING METHOD
#8SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING SECTION
#9SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF FORMING THE SAME
#10SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH
#11Oscillator with fin field-effect transistor (FinFET) resonator
#12SEMICONDUCTOR DEVICE AND EQUIPMENT
#13Semiconductor structure and forming method thereof
#14Semiconductor device structure integrating air gaps and methods of forming the same
#15Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width
#16Semiconductor device structure integrating air gaps and methods of forming the same
#17Semiconductor package including a plurality of semiconductor chips
#18Oscillator with fin field-effect transistor (FinFET) resonator
#19Semiconductor structure and forming method thereof
#20Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width
#21Semiconductor device having a shaped epitaxial region with shaping section
#223D semiconductor device and structure
#233D semiconductor device and structure
#24FinFET radiation dosimeter
#25Vertical transistor device and method for fabricating the same
#26Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width
#27Semiconductor device having a shaped epitaxial region
#28Semiconductor device
#29Semiconductor device having a shaped epitaxial region
#30Multi-phase power converter with common connections
#31Vertical transistor device and method for fabricating the same
#32Backside isolation for integrated circuit
#33Air-gap gate sidewall spacer and method
#34Graphene contacts on source/drain regions of FinFET devices
#35Air-gap gate sidewall spacer and method
#36Method of designing a layout of a semiconductor device, and a semiconductor device including a fin
#37Multi-phase power converter with common connections
#38Semiconductor device with increased source/drain area
#39Semiconductor device
#40Nonplanar device with thinned lower body portion and method of fabrication
#41Methods for microelectronics fabrication and packaging using a magnetic polymer
#42Systems and methods for microelectronics fabrication and packaging using a magnetic polymer
#43Vertical field effect transistors with protective fin liner during bottom spacer recess etch
#44Methods of forming graphene contacts on source/drain regions of FinFET devices
#45FinFET devices and methods of forming the same
#46Semiconductor structure and manufacturing method thereof
#47Methods of manufacturing semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer
#48Gate contact structure of FinFET
#49FinFETs having strained channels, and methods of fabricating finFETs having strained channels
#50Semiconductor device and method of making
#51Nonplanar device with thinned lower body portion and method of fabrication
#52DRAM with nanofin transistors
#53Semiconductor device and method of making
#54Multigate resonant channel transistor
#55Gate contact structure for FinFET
#56Nonplanar device with thinned lower body portion and method of fabrication
#57Semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer
#58DRAM with nanofin transistors
#59Nonplanar device with thinned lower body portion and method of fabrication
#60Nonplanar device with thinned lower body portion and method of fabrication
#61DRAM with nanofin transistors
#62DRAM with nanofin transistors
#63Nonplanar device with thinned lower body portion and method of fabrication
#64Nonplanar device with thinned lower body portion and method of fabrication
#65Oscillator with fin field-effect transistor (FinFET) resonator
#66Transistors having semiconductor-metal composite gate electrodes containing different thickness interfacial dielectrics and methods of making thereof
#67Semiconductor device with increased source/drain area