208694 ⎘
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors; Devices sensitive to infra-red, visible or ultra-violet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
Sub-classes:PHOTOELECTRIC DETECTOR CHIP AND PREPARATION METHOD AND APPLICATION THEREOF
#2Electromagnetic Radiation Detector with Reduced Dark Current
#3Infrared photodetector based on van der waals heterostructure and preparation method thereof
#4Double Photodiode Electromagnetic Radiation Sensor Device
#5Semiconductor light-receiving element
#6Dual band photodiode element and method of making the same
#7Optical Cavity Devices Using Stacked Multi-Quantum Wells
#8Semiconductor light-receiving element
#9Optically switched IGBT
#10AlGaN unipolar carrier solar-blind ultraviolet detector and manufacturing method thereof
#11Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
#12Opto-electronic HEMT
#13Photosensitive device and manufacturing method thereof, detection substrate and array substrate
#14Dual band photodiode element and method of making the same
#15Method for forming image sensor device structure with doping layer in light-sensing region
#16Electrically modulated IR sensitive photodiode and its integration in CMOS
#17Infrared ray detection element and method for manufacturing infrared ray detection element
#18Image sensor device structure with doping layer in light-sensing region
#19High performance, high electron mobility transistors with graphene hole extraction contacts
#20Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
#21Method for manufacturing ultraviolet photodetector based on Ga2O3 material
#22Light detector
#23Photodetector cell and solar panel with dual metal contacts and related methods
#24Device for Sensing Radiation
#25PHOTODIODE DEVICE AND METHOD OF MANUFACTURE
#26Majority current assisted radiation detector device
#27Multiband double junction photodiode and related manufacturing process
#28Majority current assisted radiation detector device
#29Semiconductor barrier photo-detector
#30Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
#31Method and system for germanium-on-silicon photodetectors without germanium layer contacts
#32Pinned photodiode with a low dark current
#33Tetra-lateral position sensing detector
#34Phototransistor with body-strapped base
#35Photodetector on silicon-on-insulator
#36Semiconductor ultraviolet (UV) photo-detecting device
#37Overvoltage protection components in an optoelectronic circuit on SOI
#38POLARIZATION INDEPENDENT PHOTODETECTOR WITH HIGH CONTRAST GRATING AND TWO DIMENSIONAL PERIOD STRUCTURE
#39Wavelength sensitive sensor photodiodes
#40Tetra-lateral position sensing detector
#41Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
#42Ambient light sensing with stacked photodiode structure with dual PN junction
#43Solid state image pick-up device, and pixel
#44SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS
#45Mesa heterojunction phototransistor and method for making same
#46Multilayer bispectral photodiode detector
#47DETECTOR FOR DUAL BAND ULTRAVIOLET DETECTION
#48SEMICONDUCTOR DEVICE WITH CONDUCTIVE TRENCHES TO CONTROL ELECTRIC FIELD
#49Wavelength sensitive sensor photodiodes
#50Detector having a Schottky barrier portion and a barrier portion having a rectifying property
#51Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
#52Tetra-lateral position sensing detector
#53Photo interrupter
#54Mesa heterojunction phototransistor and method for making same
#55SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS
#56DETECTOR FOR DUAL BAND ULTRAVIOLET DETECTION
#57Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
#58Photodetector device
#59Display device and manufacturing method of the same
#60Semiconductor structure comprising active zones
#61AE/AF sensor device with photometry conversion element formed using plural semiconductor regions and automatic focusing photoelectric conversion element formed using plural semiconductor regions
#62Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
#63Heterojunction photodiode
#64Optically triggered wide bandgap bipolar power switching devices and circuits
#65Optically controlled electrical switching device based on wide bandgap semiconductors
#66Photodiode having three doped regions, photodetector incorporating such a photodiode and method of operating such a photodetector
#67Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
#68Photomemcapacitor and method for the production thereof
#69Compound-barrier infrared photodetector
#70Fabrication of self aligned base contacts for bipolar transistors
#71Dual-band type-II superlattice detectors based on p-B-p design