208702 ⎘
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors; Devices sensitive to infra-red, visible or ultra-violet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor; Devices with Schottky gate the device being a photo MESFET
GaAs Based Photodetectors Using Dilute Nitride for Operation in O-band and C-bands
#2Gallium nitride based ultra-violet sensor with intrinsic amplification and method of operating same
#3Semiconductor photodetector assembly
#4Surface MESFET
#5MSM ultraviolet ray receiving element, MSM ultraviolet ray receiving device
#6Light-effect transistor (LET)
#7Semiconductor device and method for manufacturing the same
#8Light receiving element with offset absorbing layer
#9Light receiving element with offset absorbing layer
#10Photo-field effect transistor and its production method
#11Schottky diode with silver layer contacting the ZnO and MgZnO films
#12Low noise hybridized detector using charge transfer