208710 ⎘
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors; Devices sensitive to infra-red, visible or ultra-violet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
Dense wavelength division multiplexing (DWDM) photonic integration platform
#2Field-effect photovoltaic elements
#3Ranging method and ranging device
#4High quantum efficiency photodetector
#5VECTOR LIGHT SENSOR AND ARRAY THEREOF
#6Field-effect photovoltaic elements
#7Optical sensor comprising a photodiode having a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region
#8Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
#9Integrated MIS photosensitive device using continuous films
#10Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
#11Integrated MIS photosensitive device using continuous films
#12Method enabling a standard CMOS fab to produce an IC to sense three-dimensional information using augmented rules creating mask patterns not otherwise expressible with existing fab rules