208777 ⎘
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof; Processes for devices with an active region comprising only group IV elements comprising amorphous semiconductors
METHODS FOR THE GROWTH OF A GRAPHENE LAYER STRUCTURE ON A SUBSTRATE AND AN OPTO-ELECTRONIC DEVICE
#2Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
#3LIGHT-EMITTING DEVICES HAVING AN ANTI REFLECTIVE SILICON CARBIDE OR SAPPHIRE SUBSTRATE AND METHODS OF FORMING THE SAME
#4Light emitting device and method for manufacturing light emitting device
#5INDIRECT BAND GAP LIGHT EMITTING DEVICE
#6Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
#7Flexible silicon infrared emitter
#8Non-crystalline materials having complete photonic, electronic or phononic band gaps
#9Quantum-dot photoactive-layer and method for manufacture thereof
#10Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
#11Non-crystalline materials having complete photonic, electronic or phononic bandgaps
#12PRINTABLE MEDIUM THAT CONTAINS METAL PARTICLES AND EFFECTS ETCHING, MORE PARTICULARLY FOR MAKING CONTACT WITH SILICON DURING THE PRODUCTION OF A SOLAR CELL
#13Nitride semiconductor light emitting element having light emitting layer including INxGa1-xN well layer and LED system
#14Method for manufacturing a light emitting diode
#15Methods for manufacturing thin film transistor and display device
#16Non-crystalline materials having complete photonic, electronic, or phononic band gaps
#17Methods for manufacturing thin film transistor and display device
#18Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufactured by thereof and image input and/or output apparatus having the same