208784 ⎘
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof; Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR BODY
#2GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR BODY
#3METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES
#4InGaN-based led epitaxial wafer and fabrication method thereof
#5Using a compliant layer to eliminate bump bonding
#6Alumina sintered body and base substrate for optical device
#7Methods of providing semiconductor devices and semiconductor devices thereof
#8II-VI BASED LIGHT EMITTING SEMICONDUCTOR DEVICE
#9Gas phase enhancement of emission color quality in solid state LEDs
#10Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus
#11Integrated multi-color light emitting device made with hybrid crystal structure
#12Nanostructured hybrid particle, manufacturing method thereof, and device including the nanostructured hybrid particle
#13Method for producing light emitting semiconductor device
#14Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications
#15Manufacturing method of quantum dot light emitting diode
#16METHOD FOR FORMING ALIGNED OXIDE SEMICONDUCTOR WIRE PATTERN AND ELECTRONIC DEVICE USING SAME
#17II-VI based light emitting semiconductor device
#18Plasmonic graphene and method of making the same
#19Gas phase enhancement of emission color quality in solid state LEDs
#20Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same
#21Blue light-emitting diodes based on zinc selenide quantum dots
#22Deposition of semiconductor nanocrystals for light emitting devices
#23Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same
#24Light-emitter-based devices with lattice-mismatched semiconductor structures
#25Nanostructured electrodes and active polymer layers
#26METHOD FOR PRODUCING ZINC OXIDE ON GALLIUM NITRIDE AND APPLICATION THEREOF
#27Semiconductor-graphene hybrids formed using solution growth
#28Light-emitting device and method of fabricating the same
#29Thin film, method of forming the same, and semiconductor light-emitting element comprising the thin film
#30Stable P-type semiconducting behaviour in Li and Ni codoped ZnO
#31Re-emitting semiconductor construction with enhanced extraction efficiency
#32WHITE LIGHT EMITTING DIODE
#33Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
#34Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
#35Large-scale fabrication of vertically aligned ZnO nanowire arrays
#36Forming II-VI core-shell semiconductor nanowires
#37Wet etching agent for II-VI semiconductors and method
#38Zinc oxide based compound semiconductor device
#39Zinc-oxide based epitaxial layers and devices
#40Stable P-type semiconducting behaviour in Li and Ni codoped ZnO
#41Compound-type thin film, method of forming the same, and electronic device using the same
#42Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
#43Method of preparing P-type doped ZnO or ZnMgO
#44Zinc Oxide Materials and Methods for Their Preparation
#45Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide
#46Method for Fabricating a P-I-N Light Emitting Diode Using Cu-Doped P-Type Zno
#47Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates
#48DISTRIBUTED FEEDBACK LASERS FORMED VIA ASPECT RATIO TRAPPING
#49Light-emitter-based devices with lattice-mismatched semiconductor structures
#50Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers
#51Process for preparing p-n junctions having a p-type ZnO film
#52Quantum dot based optoelectronic device and method of making same
#53ZnO based compound semiconductor light emitting device and method for manufacturing the same
#54Technique to grow high quality ZnSe epitaxy layer on Si substrate
#55Zn-base semiconductor light-emitting device and method for manufacturing same