208787 ⎘
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Radiation-emitting semiconductor element and method for producing the same
#602Light emitting diode structure
#603Gallium nitride-based semiconductor light-emitting device and method of fabricatiing the same
#604GaN-based light-emitting diode structure
#605Semiconductor light emitting devices including in-plane light emitting layers
#606Gallium nitride-based semiconductor light-emitting device
#607Semiconductor light-emitting device
#608Doped semiconductor nanocrystals
#609Semiconductor light generating device
#610Nitride semiconductor element
#611Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
#612Light emitting device
#613Insulating nitride layer and process for its forming, and semiconductor device and process for its production
#614Group-III-element nitride crystal semiconductor device
#615Radiation-emitting semiconducting body with confinement layer
#616Semiconductor light emitting device and its manufacturing method
#617Semiconductor light emitting device and its manufacturing method
#618Light emitting diode and method for manufacturing the same
#619Light emitting diode and method for manufacturing the same
#620Semiconductor light emitting device and method for manufacturing same
#621Methods of forming conductors and semiconductors on a substrate