208795 ⎘
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Gallium-nitride based light emitting diode structure
#902Gallium-nitride based light emitting diode structure with enhanced light illuminance
#903Light-emitting diode and its manufacturing method
#904Gallium nitride based light emitting device and the fabricating method for the same
#905Light extraction from a semiconductor light emitting device via chip shaping
#906Nitride semiconductor device and method of manufacturing the same
#907Epitaxial wafer for semiconductor light-emitting devices, and semiconductor light-emitting device
#908Light emitting diode structure
#909Gallium nitride based light emitting device and the fabricating method for the same
#910Semiconductor light emitting device and method of making the same
#911High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
#912High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof
#913Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same
#914Nitride semiconductor device
#915Semiconductor device and method using nanotube contacts
#916Group III-nitride based led having a transparent current spreading layer
#917Nitride-based semiconductor device and method of fabricating the same
#918Structure and manufacturing of gallium nitride light emitting diode
#919Light-emitting semiconductor device
#920Group III-nitride based LED having a transparent current spreading layer
#921Semiconductor light emitting devices including current spreading layers
#922Nitride semiconductor element
#923Method of manufacturing gallium nitride based semiconductor light emitting device
#924Light-emitting semiconductor device
#925Structure and manufacturing method for GaN light emitting diodes
#926Light emitting device
#927Ohmic contact structure and method for the production of the same
#928Nitride-based semiconductor device and method of fabricating the same
#929Light emitting diode and method for manufacturing the same
#930Light emitting diode and method for manufacturing the same
#931Forming conformable layer with flap on semiconductor devices
#932Reflectors having overall mesa shapes
#933Micro light-emitting diode
#934Micro light-emitting diode display device and micro light-emitting diode driving circuit
#935Forming conformable layer with flap on semiconductor devices
#936Heterogeneous tunneling junctions for hole injection in nitride based light-emitting devices
#937Aluminum nitride-aluminum oxide layers for enhancing the efficiency of group III-nitride light-emitting devices
#938Oxy-bromide phosphors and uses thereof
#939Light-emitting diode display and manufacturing method thereof
#940Light-emitting device
#941Light emitter with a conductive transparent p-type layer structure
#942Strain-balanced extended-wavelength barrier detector
#943Semiconductor device and a method of making a semiconductor device