ClassID:

208804

H01L33/285 - CPC Classification

Classification description:

Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies; Materials of the light emitting region containing only elements of group II and group VI of the periodic system characterised by the doping materials

Recent Application in this class:
#1
20240355967
2024-10-24

Light Emission Device And Method Of Forming The Same

#2
20230090617
2023-03-23

Dielectric elastomer precursor fluid, preparation method therefor and use thereof, dielectric elastomer composite material, flexible device, and light-emitting device

#3
20220238755
2022-07-28

MICRON-SIZED LIGHT EMITTING DIODE DESIGNS

#4
20220223758
2022-07-14

Light-emitting diode

#5
20210091266
2021-03-25

Compositions of metal oxide semiconductor nanomaterials and hemostatic polymers

#6
20210036184
2021-02-04

Micron-sized light emitting diode designs

#7
20200287083
2020-09-10

Light-emitting diode

#8
20200127159
2020-04-23

Micron-sized light emiting diode designs

#9
20190341521
2019-11-07

Micron-sized light emitting diode designs

#10
20190312175
2019-10-10

Method for production of quantum rods with precisely controllable wavelength of emission

#11
20180122983
2018-05-03

Light-emitting diode and method of fabricating the same

#12
20170256676
2017-09-07

II-VI BASED LIGHT EMITTING SEMICONDUCTOR DEVICE

#13
20170104127
2017-04-13

ZnO-containing semiconductor structure and manufacturing thereof

#14
20160319461
2016-11-03

Composition comprising an engineered defect concentration

#15
20160293799
2016-10-06

Method for producing light emitting semiconductor device

#16
20160118440
2016-04-28

Photo-induced MSM stack

#17
20160087047
2016-03-24

Quantum rod and method of fabricating the same

#18
20150372191
2015-12-24

Surface light-emission element using zinc oxide substrate

#19
20150340559
2015-11-26

II-VI based light emitting semiconductor device

#20
20150228850
2015-08-13

Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode

#21
20150034884
2015-02-05

Method for producing semiconductor microparticles and the microparticles

#22
20140145144
2014-05-29

Quantum rod and method of fabricating the same

#23
20130119381
2013-05-16

Ultraviolet light emitting material

#24
20130082216
2013-04-04

Single-source precursor for semiconductor nanocrystals

#25
20120199828
2012-08-09

Stable P-type semiconducting behaviour in Li and Ni codoped ZnO

#26
20120192787
2012-08-02

Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS

#27
20120055528
2012-03-08

Thermoelectric materials

#28
20110114937
2011-05-19

p-Type MgZnO-based thin film and semiconductor light emitting device

#29
20110089418
2011-04-21

Zinc oxide based compound semiconductor device

#30
20110084275
2011-04-14

ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device

#31
20110049506
2011-03-03

Stable P-type semiconducting behaviour in Li and Ni codoped ZnO

#32
20110042626
2011-02-24

Method for producing semiconductor microparticles and the microparticles

#33
20110001122
2011-01-06

Compound semiconductors

#34
20100209686
2010-08-19

Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS

#35
20100090214
2010-04-15

OXIDE THIN FILM AND OXIDE THIN FILM DEVICE

#36
20100032008
2010-02-11

ZINC OXIDE MULTI-JUNCTION PHOTOVOLTAIC CELLS AND OPTOELECTRONIC DEVICES

#37
20090294758
2009-12-03

ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device

#38
20090267063
2009-10-29

Semiconductor light-emitting device and method of manufacturing the same

#39
20090236598
2009-09-24

ZnO layer and semiconductor light emitting device

#40
20090218550
2009-09-03

Single-source precursor for semiconductor nanocrystals

#41
20090134427
2009-05-28

Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide

#42
20090008660
2009-01-08

ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device

#43
20080247434
2008-10-09

SEMICONDUCTOR LIGHT-EMITTING DEVICE

#44
20080233670
2008-09-25

Method for Fabricating a P-I-N Light Emitting Diode Using Cu-Doped P-Type Zno

#45
20080090390
2008-04-17

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

#46
20080090386
2008-04-17

Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal

#47
20080090328
2008-04-17

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

#48
20080090327
2008-04-17

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

#49
20080089831
2008-04-17

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

#50
20070181904
2007-08-09

P-type ZnS based semiconductor material having a low resistance due to its high copper content

#51
20070138477
2007-06-21

Semiconductor device and its manufacturing method, and display device and electronic appliance

#52
20070102709
2007-05-10

P-type group II-VI semiconductor compounds

#53
20070022947
2007-02-01

Process for preparing p-n junctions having a p-type ZnO film

#54
20050287817
2005-12-29

Low dielectric constant group II-VI insulator

#55
20050285138
2005-12-29

Persistent p-type group II-IV semiconductors

#56
20050285119
2005-12-29

Dynamic p-n junction growth

#57
20050110034
2005-05-26

White color light emitting device