209033 ⎘
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Hall-effect devices Semiconductor Hall-effect devices
HALL EFFECT DEVICE WITH TRENCH ABOUT A MICRON OR GREATER IN DEPTH
#2VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES
#3HALL EFFECT DEVICES INTEGRATED WITH JUNCTION TRANSISTORS
#4MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MAGNETIC MEMORY
#5SPIN-ORBIT READOUT USING TRANSITION METAL DICHALCOGENIDES AND PROXIMITIZED GRAPHENE
#6Current sensor integrated circuit with a dual gauge lead frame
#7STRESS REDUCTION LAYER BASED ON COATING TECHNIQUE
#8Semiconductor device with passivated magnetic concentrator
#9Hall sensor with dielectric isolation and p-n junction isolation
#10Hall Effect Prism Sensor
#11Hall Effect Prism Sensor
#12FERROELECTRICALLY MODULATED SPIN ORBIT LOGIC DEVICE
#13Spin element and magnetic memory
#14MATERIALS EXHIBITING TRANSPORT PROPERTIES SPECIFIC TO WEYL FERMIONS AND MAGNETRESISTANCE DEVICES BASED ON SUCH MATERIALS
#15Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element
#16Insulated current sensor
#17Hall Effect Sensor with Reduced JFET Effect
#18Stacked spin-orbit-torque magnetoresistive random-access memory
#19MEMORY DEVICE AND FORMATION METHOD THEREOF
#20Semiconductor device and manufacturing method thereof
#21SIGNAL COMPENSATION SYSTEM CONFIGURED TO MEASURE AND COUNTERACT ASYMMETRY IN HALL SENSORS
#22High-temperature three-dimensional hall sensor with real-time working temperature monitoring function and manufacturing method therefor
#23MAGNETIC FIELD SENSOR
#24Semiconductor device with CMOS process based hall sensor and manufacturing method
#25Nanoscale strain engineering of graphene devices with tuneable electronic correlation for quantum valleytronics and spintronics
#26HALL INTEGRATED SENSOR AND CORRESPONDING MANUFACTURING PROCESS
#27Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same
#28Magnetic field sensor and methods of fabricating a magnetic field sensor
#29Semiconductor device with integrated magnetic flux concentrator, and method for producing same
#30Spin-orbit torque device
#31Valley spin hall effect based non-volatile memory
#32Data storage devices including a first top electrode and a different second top electrode thereon
#33Magnetic sensor device
#34Method of providing an air- and/or moisture-barrier coating on a two-dimensional material
#35Silicon hall sensor with low offset and drift compensation coils
#36Hall-effect sensor with reduced offset voltage
#37SEMICONDUCTOR DIE WITH SENSOR SECTION LOCATED AT THE EDGE
#38Spin-orbit torque device, method for fabricating a spin-orbit torque device and method for switching a switchable magnetization of a spin-orbit torque device
#39Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistance effect element, magnetic memory, and reservoir element
#40Semiconductor device and method of forming the same
#41Hall integrated circuit and corresponding method of manufacturing of a hall integrated circuit using wafer stacking
#42Current sensor integrated circuits
#43Hall element and electronic component
#44Magnetic tunneling junction with synthetic free layer for SOT-MRAM
#45SOI semiconductor structure and method for manufacturing an SOI semiconductor structure
#46Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields
#47Hall element
#48Semiconductor device
#49Hall effect sensor devices and methods of forming hall effect sensor devices
#50Magnetic sensor and magnetic detection method
#51Semiconductor stack for hall effect device
#52Magnetoresistive devices and methods therefor
#53Current sensor integrated circuits
#54Spin-orbit torque magnetoresistance effect element and magnetic memory
#55Hall-effect sensor package with added current path
#56Device for electric field induced local magnetization
#57Current transducer with integrated primary conductor
#58Hall sensors with a three-dimensional structure
#59Hall device
#60Stacked die assembly
#61Power device, system including the power device, method for manufacturing the power device, and method for controlling the power device
#62Thermoelectric Cooling and Power Generation based on the Quantum Hall Effect
#63Electrical contacts for low dimensional materials
#64Multi-die integrated current sensor
#65Sensor defect diagnostic circuit
#66Current sensor and method for manufacturing current sensor
#67Vertical hall sensor structure
#68Valley spin hall effect based non-volatile memory
#69Spin-orbit torque type magnetization rotating element, spin-orbit torque type magnetoresistance effect element, and magnetic memory
#70Isolated hall sensor structure
#71HIGH VOLTAGE DEVICES WITH MULTIPLE POLYIMIDE LAYERS
#72Triaxial magnetic sensor for measuring magnetic fields, and manufacturing process thereof
#73Semiconductor device with embedded magnetic flux concentrator
#74Hall sensor structure
#75Hall-effect sensor package with added current path
#76Signal compenstation system configured to measure and counteract asymmetry in hall sensors
#77Semiconductor device
#78Semiconductor device
#79Semiconductor device
#80Hall sensor with performance control
#81Magneto-resistive effect element
#82Hall effect sensors with tunable sensitivity and/or resistance
#83Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields
#84Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
#85Hall effect sensor with low offset and high level of stability
#86Semiconductor device
#87Spin element and magnetic memory
#88Magnetic tunnel junction device with spin-filter structure
#89Component semiconductor structure
#90Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory
#91Ferromagnetic multilayer film, magnetoresistance effect element, and method for manufacturing ferromagnetic multilayer film
#92Current sensor packages
#93Hall sensor device and Hall sensing method
#94Amplification using ambipolar hall effect in graphene
#95Semiconductor sensor structure
#96Magnetic sensor
#97SOI semiconductor structure and method for manufacturing an SOI semiconductor structure
#98Semiconductor device having a vertical hall element with a buried layer
#99Gateless P-N junction metrolog
#100Key-based multi-qubit memory
#101Insulated current sensor
#102Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields
#103Spin-orbit-torque magnetoresistance effect element and magnetic memory
#104Fast-switching driver circuit for an inductive load
#105Semiconductor device
#106Integrated magnetic concentrator and connection
#107Magnetoelectric spin orbit logic based full adder
#108Content addressable memory with spin-orbit torque devices
#109Current sensor packages with through hole in semiconductor
#110Combined spin-orbit torque and spin-transfer torque switching for magnetoresistive devices and methods therefor
#111Dual metal nitride landing pad for MRAM devices
#112Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element
#113Monolithic integrated circuits with multiple types of embedded non-volatile memory devices
#114SEMICONDUCTOR DEVICE
#115Concept for compensating for a mechanical stress of a hall sensor circuit integrated into a semiconductor substrate
#116Semiconductor device
#117Magnetoelectric spin orbit logic with paramagnets
#118Hall sensor with buried hall plate
#119Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
#120Semiconductor device
#121Semiconductor device and method of adjusting the same
#122Current sensor isolation
#123Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and spin-orbit-torque magnetization rotational element manufacturing method
#124Hall effect sensors with a metal layer comprising an interconnect and a trace
#125Hall element for 3-D sensing and method for producing the same
#126Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for dual bit operation and methods for fabricating the same
#127Quantum spin hall-based charging energy-protected quantum computation
#128Semiconductor device, and method for manufacturing the same
#129Electronic device
#130Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
#131Hall element for 3-D sensing and method for producing the same
#132Methods and structures for altering charge carrier density or bandgap of a topological Dirac semimetal layer
#133INTEGRATED MAGNETIC FIELD SENSOR-CONTROLLED SWITCH DEVICES
#134Redundant sensor fault detection
#135Sensor defect diagnostic circuit
#136Magnetoresistive effect element and magnetic memory
#137Isolated hall effect element with improved electro-magnetic isolation
#138Hall effect sensor with enhanced sensitivity and method for producing the same
#139Omnipolar schmitt trigger
#140Spin current magnetization rotational element, spin-orbit torque magnetoresistance effect element, and magnetic memory
#141Magnetic sensor and detection device using same
#142Si-BASED SPINTRONICS DEVICES
#143Semiconductor device
#144Signal isolator having interposer
#145Semiconductor device and mounting structure of semiconductor device
#146Spin orbit materials for efficient spin current generation
#147Hall element module
#148Three terminal spin hall MRAM
#149Well-based vertical Hall element with enhanced magnetic sensitivity
#150Hall element for 3-D sensing and method for producing the same
#151Magnetic field sensor with magnetic field shield structure and systems incorporating same
#152Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress
#153Approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures
#154Temperature compensation circuit, corresponding device and method
#155Electronic device, manufacturing method and operation method thereof, electronic copy system
#156Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields
#157Metal-oxide semiconductor (MOS) device structure based on a poly-filled trench isolation region
#158Integrated semiconductor device having isolation structure for reducing noise
#159Magnetic field compensation device
#160SEMICONDUCTOR DEVICE
#161Circuits and devices based on enhanced spin Hall effect for efficient spin transfer torque
#162Current transducer with integrated primary conductor
#163Magneto-resistive effect element
#164Hall element
#165Semiconductor device
#166Magnetic sensor circuit
#167Semiconductor device
#168Semiconductor device
#169Current sensing system and current sensing method
#170Semiconductor device having circuitry positioned above a buried magnetic sensor
#171Spin logic with magnetic insulators switched by spin orbit coupling
#172Sensor component with cap over trench and sensor elements
#173Charge-carrier hall-effect sensor
#174Magnetic sensor, a magnetic detection apparatus, and a magnetic detection method
#175Semiconductor device
#176Hall element for 3-D sensing and method for producing the same
#177Magnetic tunnel junction device with spin-filter structure
#178Semiconductor device
#179Semiconductor element with hall element and sealing resin
#180Hall element module
#181Semiconductor device having vertical hall element
#182Systems and methods for sensing a voltage transient in a magnetic field sensor integrated circuit
#183Hall sensor
#184Three terminal SOT memory cell with anomalous hall effect
#185Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
#186Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element
#187Sensor and method for producing same
#188Durable miniature gas composition detector having fast response time
#189Semiconductor package and method of making the same
#190Hall effect sensing element
#191Semiconductor device and mounting structure of semiconductor device
#192Hall effect device
#193Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same
#194SPIN CURRENT-ELECTRIC CURRENT CONVERSION STRUCTURE, THERMOELECTRIC CONVERSION ELEMENT USING THE SAME, AND METHOD FOR MAKING THE SAME
#195Magnetoelectric converting element and module utilizing the same
#196SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME
#197SOT MRAM cell with perpendicular free layer and its cross-point array realization
#198METHOD FOR MANUFACTURING A HALL SENSOR
#199Method for manufacturing semiconductor devices
#200Hall sensor device and hall sensing method
#201Sensor module and method of manufacture
#202Component with reduced stress forces in the substrate
#203Spin hall effect MRAM with self-reference read
#204Method for doping an active hall effect region of a hall effect device
#205Hall sensor with buried hall plate
#206MAGNETIC SENSOR AND METHOD OF MANUFACTURING THE SAME
#207SPIN TRANSPORT ELECTRONIC DEVICE
#208INTEGRATED HALL EFFECT SENSORS WITH VOLTAGE CONTROLLABLE SENSITIVITY
#209Semiconductor device for sensing a magnetic field including an encapsulation material defining a through-hole
#210Magnetic sensor and method of manufacturing the same
#211Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
#212Magnetic sensor and method of manufacturing the same
#213SEMICONDUCTOR DEVICE AND MAGNETIC SENSOR
#214Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress
#2153-contact vertical hall sensor elements connected in a ring and related devices, systems, and methods
#216Adapter for receiving an integrated circuit
#217Carbon nanostructure device fabrication utilizing protect layers
#218Methods for magnetic sensor having non-conductive die paddle
#219Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque
#220Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof
#221Two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer and method of fabricating the same
#222Construction of a hall-effect sensor in a buried isolation region
#223Three terminal SOT memory cell with anomalous Hall effect
#224Transistor that employs collective magnetic effects thereby providing improved energy efficiency
#225Spin current devices and methods of fabrication thereof
#226Vertical hall effect element with improved sensitivity
#227Spin logic device and electronic equipment including same
#228Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applications
#229Hall effect device
#230MAGNETO-ELECTRIC TRANSDUCER AND METHOD FOR MANUFACTURING THE SAME
#231Semiconductor device and manufacturing method thereof
#232Magnetic memory device
#233Semiconductor device and manufacturing method thereof
#234Semiconductor device
#235Semiconductor package with integrated magnetic field sensor
#236Magnetic field measuring device
#237Magnetic sensor and method of fabricating the same
#238Hall effect sensing element
#239Low noise graphene hall sensors, systems and methods of making and using same
#240Semiconductor devices having insulating substrates and methods of formation thereof
#241Current sensor isolation
#242Semiconductor device
#243Method for doping an active Hall effect region of a Hall effect device and Hall effect device having a doped active Hall effect region
#244Magnetic sensor having a recessed die pad
#245Magnetic sensor and method of manufacturing the same
#246MRAM having spin hall effect writing and method of making the same
#247Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applications
#248Vertical hall effect sensor
#249Methods and apparatus for magnetic sensor having non-conductive die paddle
#250Electronic devices
#251Vertical hall element
#252High stability spintronic memory
#253Integrated magnetic field sensor-controlled switch devices
#254Durable miniature gas composition detector having fast response time
#255Vertical hall sensors with reduced offset error
#256Three 3-contact vertical hall sensor elements connected in a ring and related devices, systems, and methods
#257Vertical hall device comprising a slot in the hall effect region
#258Magnetic memory device
#259Electronic device including an isolation structure
#260Hall effect device
#261COMPOUND SEMICONDUCTOR STACK AND SEMICONDUCTOR DEVICE
#262Packaging for an electronic device
#263Vertical hall sensor, hall sensor module and method for manufacturing the same
#264Vertical hall device
#265Hall effect sensor
#266Low offset vertical hall device and current spinning method
#267High-mobility semiconductor heterostructures
#268Method for manufacturing a hall sensor assembly and a hall sensor assembly
#269Integrated circuits with hall effect sensors and methods for producing such integrated circuits
#270Conductive pad structure and method of fabricating the same
#271Hall effect sensor arrangement
#272Vertical hall effect device
#273Vertical hall effect-device
#274Method for processing a carrier, a carrier, an electronic device and a lithographic mask
#275Sensing device
#276Semiconductor device having circuitry positioned above a buried magnetic sensor
#277Integrated circuit having first and second magnetic field sensing elements
#278Electronic device with ring-connected hall effect regions
#279Thermoelectric conversion element and manufacturing method for same
#280Low offset spinning current hall plate and method to operate it
#281Quantum well device with lateral electrodes
#282Vertical hall sensor with high electrical symmetry
#283Vertical hall sensor with series-connected hall effect regions
#284Hybrid domain wall-hall cross device
#285Hall effect sensor with graphene detection layer
#286Vertical hall effect sensor
#287Magnetic field sensing element combining a circular vertical hall magnetic field sensing element with a planar hall element
#288Electronic device comprising hall effect region with three contacts
#289Low offset and high sensitivity vertical hall effect sensor
#290Integrated hall effect sensor with a biased buried electrode
#291Magnetic field sensor device
#292SEMICONDUCTOR STRUCTURE FOR ELECTROMAGNETIC INDUCTION SENSING AND A METHOD OF MANUFACTURING THE SAME
#293Vertical hall effect sensor with offset reduction using depletion regions
#294Packaging for an electronic device
#295Vertical hall effect element with structures to improve sensitivity
#296Spin hall effect assisted spin transfer torque magnetic random access memory
#297Magnetic sensor and method of fabricating the same
#298Method for processing a carrier, a carrier, an electronic device and a lithographic mask
#299METHOD OF IMPROVING SENSITIVITY OF TERRESTRIAL MAGNETISM SENSOR AND APPARATUS USING THE SAME
#300Vertical hall device with highly conductive opposite face node for electrically connecting first and second hall effect regions