ClassID:

209037

H01L43/14 - CPC Classification

Classification description:

Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof for Hall-effect devices

Recent Application in this class:
#1
20240107896
2024-03-28

MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE

#2
20240107777
2024-03-28

SOT MRAM structure and fabricating method of the same

#3
20240032441
2024-01-25

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE AND METHOD OF FORMING THE SAME

#4
20240016067
2024-01-11

Magnetic memory and manufacturing method thereof

#5
20240016066
2024-01-11

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

#6
20240006109
2024-01-04

Highly textured 001 BiSb and materials for making same

#7
20230413684
2023-12-21

VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES

#8
20230371400
2023-11-16

MEMORY CELL, MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

#9
20230337551
2023-10-19

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

#10
20230320233
2023-10-05

SPIN-ORBIT-TORQUE BASED MAGNETIC SENSOR AND A MAGNETIC FIELD MEASUREMENT METHOD USING A MAGNETIC SENSOR

#11
20230320232
2023-10-05

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

#12
20230320230
2023-10-05

SPIN-ORBIT READOUT USING TRANSITION METAL DICHALCOGENIDES AND PROXIMITIZED GRAPHENE

#13
20230314483
2023-10-05

Current sensor integrated circuit with a dual gauge lead frame

#14
20230309320
2023-09-28

EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY

#15
20230284538
2023-09-07

MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR MAGNETIC LAYERS AND METHOD OF MANUFACTURING SAME

#16
20230263074
2023-08-17

Memory Device Including Bottom Electrode Bridges and Method of Manufacture

#17
20230255122
2023-08-10

Memory structure and formation method thereof

#18
20230240152
2023-07-27

MULTIFERROIC TUNNEL JUNCTION MEMORY DEVICE AND RELATED METHODS

#19
20230200258
2023-06-22

Semiconductor device and method for fabricating the same

#20
20230197132
2023-06-22

Doping process to refine grain size for smoother BiSb film surface

#21
20230189659
2023-06-15

SYNTHETIC ANTIFERROMAGNET-BASED PROBABILISTIC COMPUTING DEVICES

#22
20230145391
2023-05-11

Ferromagnetic free layer, preparation method and application thereof

#23
20230135922
2023-05-04

Semiconductor device with passivated magnetic concentrator

#24
20230129179
2023-04-27

Hall sensor with dielectric isolation and p-n junction isolation

#25
20230107965
2023-04-06

MAGNETIZATION ROTATION ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ARRAY, HIGH FREQUENCY DEVICE, AND METHOD FOR MANUFACTURING MAGNETIZATION ROTATION ELEMENT

#26
20230097481
2023-03-30

Semiconductor device and method for fabricating the same

#27
20230086181
2023-03-23

Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ)

#28
20230084241
2023-03-16

Semiconductor device and method for fabricating the same

#29
20230077612
2023-03-16

MAGNETIC FILM, MAGNETORESISTIVE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING MAGNETIC FILM

#30
20230076145
2023-03-09

MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER

#31
20230071950
2023-03-09

Memory device

#32
20230064289
2023-03-02

Spin-orbit torque and spin-transfer torque magnetoresistive random-access memory stack

#33
20230060680
2023-03-02

MATERIALS EXHIBITING TRANSPORT PROPERTIES SPECIFIC TO WEYL FERMIONS AND MAGNETRESISTANCE DEVICES BASED ON SUCH MATERIALS

#34
20230053632
2023-02-23

MAGNETORESISTIVE DEVICES AND METHODS OF FABRICATING MAGNETORESISTIVE DEVICES

#35
20230050152
2023-02-16

Spin-orbit-torque magnetoresistive random-access memory with integrated diode

#36
20230049864
2023-02-16

Insulated current sensor

#37
20230046923
2023-02-16

Spin-orbit-torque magnetoresistive random-access memory

#38
20230040768
2023-02-09

Stacked spin-orbit-torque magnetoresistive random-access memory

#39
20230040502
2023-02-09

Magnetic memory device

#40
20230027792
2023-01-26

MEMORY DEVICE AND FORMATION METHOD THEREOF

#41
20230026157
2023-01-26

Semiconductor device and manufacturing method thereof

#42
20220416155
2022-12-29

DOMAIN WALL MOTION TYPE MAGNETIC RECORDING ELEMENT

#43
20220413068
2022-12-29

High-temperature three-dimensional hall sensor with real-time working temperature monitoring function and manufacturing method therefor

#44
20220383922
2022-12-01

Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line

#45
20220376171
2022-11-24

THREE-DIMENSIONAL (3D) MAGNETIC MEMORY DEVICES COMPRISING A MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A METALLIC BUFFER LAYER

#46
20220376170
2022-11-24

MAGNETIC STRUCTURE CAPABLE OF FIELD-FREE SPIN-ORBIT TORQUE SWITCHING AND PRODUCTION METHOD AND USE THEREOF

#47
20220367090
2022-11-17

Controlling a quantum point junction on the surface of an antiferromagnetic topological insulator

#48
20220344581
2022-10-27

Semiconductor device with CMOS process based hall sensor and manufacturing method

#49
20220328757
2022-10-13

Weyl semimetal material for magnetic tunnel junction

#50
20220290296
2022-09-15

METHOD FOR THE PRODUCTION OF A POLYMER COATED GRAPHENE LAYER STRUCTURE AND GRAPHENE LAYER STRUCTURE

#51
20220285609
2022-09-08

Memory device

#52
20220285608
2022-09-08

Magnetoresistance effect element and magnetic memory

#53
20220285435
2022-09-08

Memory device, method of forming the same, and memory array

#54
20220254992
2022-08-11

Magnetic device

#55
20220246840
2022-08-04

HALL INTEGRATED SENSOR AND CORRESPONDING MANUFACTURING PROCESS

#56
20220231221
2022-07-21

Spin current magnetization rotational element

#57
20220223786
2022-07-14

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

#58
20220223785
2022-07-14

Semiconductor device and manufacturing method of semiconductor device

#59
20220216396
2022-07-07

Memory device and manufacturing method thereof

#60
20220209104
2022-06-30

Magnetoresistive devices and methods of fabricating magnetoresistive devices

#61
20220208244
2022-06-30

SOT-MRAM with shared selector

#62
20220190234
2022-06-16

MAGNETIZATION ROTATION ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING SPIN-ORBIT TORQUE WIRING

#63
20220173307
2022-06-02

Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same

#64
20220171001
2022-06-02

Magnetic field sensor and methods of fabricating a magnetic field sensor

#65
20220165943
2022-05-26

Spin-orbit torque (SOT)-based magnetic tunnel junction and method of fabricating the same

#66
20220158083
2022-05-19

Magnetic device and magnetic random access memory

#67
20220149272
2022-05-12

Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio

#68
20220137161
2022-05-05

Magnetic sensor device

#69
20220131068
2022-04-28

Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

#70
20220131067
2022-04-28

Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

#71
20220115585
2022-04-14

Current sensor package with continuous insulation

#72
20220109101
2022-04-07

Integrated device and neuromorphic device

#73
20220093852
2022-03-24

Method of providing an air- and/or moisture-barrier coating on a two-dimensional material

#74
20220075009
2022-03-10

Silicon hall sensor with low offset and drift compensation coils

#75
20220075007
2022-03-10

Hall-effect sensor with reduced offset voltage

#76
20220052109
2022-02-17

Spin-orbit torque device, method for fabricating a spin-orbit torque device and method for switching a switchable magnetization of a spin-orbit torque device

#77
20220044718
2022-02-10

STT-SOT hybrid magnetoresistive element and manufacture thereof

#78
20220029089
2022-01-27

Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistance effect element, magnetic memory, and reservoir element

#79
20220020919
2022-01-20

Semiconductor device and method of forming the same

#80
20220020814
2022-01-20

Hall integrated circuit and corresponding method of manufacturing of a hall integrated circuit using wafer stacking

#81
20220006006
2022-01-06

SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT

#82
20220005498
2022-01-06

SOT differential reader and method of making same

#83
20210399211
2021-12-23

Storage element, semiconductor device, magnetic recording array, and method of manufacturing storage element

#84
20210395080
2021-12-23

Micro-electromechanical device having a soft magnetic material electrolessly deposited on a palladium layer coated metal beam

#85
20210367143
2021-11-25

Magnetic tunneling junction with synthetic free layer for SOT-MRAM

#86
20210367142
2021-11-25

Magnetic memory device

#87
20210366984
2021-11-25

SOI semiconductor structure and method for manufacturing an SOI semiconductor structure

#88
20210359199
2021-11-18

Strained ferromagnetic hall metal SOT layer

#89
20210351342
2021-11-11

Spin-orbit torque MRAM structure and manufacture thereof

#90
20210303981
2021-09-30

Reservoir element and neuromorphic element

#91
20210286025
2021-09-16

Hall effect sensor devices and methods of forming hall effect sensor devices

#92
20210257544
2021-08-19

Semiconductor stack for hall effect device

#93
20210257543
2021-08-19

Stacked spin-orbit-torque magnetoresistive random-access memory

#94
20210234090
2021-07-29

Magnetoresistive devices and methods therefor

#95
20210184106
2021-06-17

Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element

#96
20210159403
2021-05-27

Hall-effect sensor package with added current path

#97
20210159398
2021-05-27

Nanometer scale nonvolatile memory device and method for storing binary and quantum memory states

#98
20210159397
2021-05-27

Magnetic memory

#99
20210141004
2021-05-13

Current transducer with integrated primary conductor

#100
20210135095
2021-05-06

Hall sensors with a three-dimensional structure

#101
20210134503
2021-05-06

Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method

#102
20210134339
2021-05-06

SOT-MRAM with shared selector

#103
20210119117
2021-04-22

Spin-orbit torque-based switching device and method of fabricating the same

#104
20210104663
2021-04-08

Integration scheme for three terminal spin-orbit-torque (SOT) switching devices

#105
20210104626
2021-04-08

Power device, system including the power device, method for manufacturing the power device, and method for controlling the power device

#106
20210043831
2021-02-11

Spin-current magnetization rotational element and spin orbit torque type magnetoresistance effect element

#107
20210043830
2021-02-11

Electrical contacts for low dimensional materials

#108
20210036054
2021-02-04

MRAM device having self-aligned shunting layer

#109
20210011058
2021-01-14

Current sensor and method for manufacturing current sensor

#110
20200403149
2020-12-24

Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio

#111
20200403148
2020-12-24

Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device

#112
20200371169
2020-11-26

Triaxial magnetic sensor for measuring magnetic fields, and manufacturing process thereof

#113
20200371168
2020-11-26

Semiconductor device with embedded magnetic flux concentrator

#114
20200361775
2020-11-19

Method of making graphene structures and devices

#115
20200357987
2020-11-12

Hall-effect sensor package with added current path

#116
20200350490
2020-11-05

Spin-orbit-torque type magnetoresistance effect element and magnetic memory

#117
20200343301
2020-10-29

Spin orbit memory devices with dual electrodes, and methods of fabrication

#118
20200312908
2020-10-01

Spin orbit memory devices with reduced magnetic moment and methods of fabrication

#119
20200303631
2020-09-24

Three-dimensional (3D) magnetic memory devices comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer

#120
20200303630
2020-09-24

Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer

#121
20200292631
2020-09-17

Hall effect sensors with tunable sensitivity and/or resistance

#122
20200279992
2020-09-03

Manufacturing method for multilayer structure of magnetic body and BiSb layer, magnetoresistive memory, and pure spin injection source

#123
20200259078
2020-08-13

Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy

#124
20200259073
2020-08-13

Hall effect sensor with low offset and high level of stability

#125
20200235288
2020-07-23

In-plane spin orbit torque magnetoresistive stack/structure and methods therefor

#126
20200227627
2020-07-16

Component semiconductor structure

#127
20200227474
2020-07-16

Spin orbit torque memory devices and methods of fabrication

#128
20200211608
2020-07-02

Perpendicular magnetoelectric spin orbit logic

#129
20200194666
2020-06-18

Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory

#130
20200185600
2020-06-11

Current sensor packages

#131
20200185598
2020-06-11

Magnetic memory device

#132
20200176672
2020-06-04

Method of manufacturing a magnetoresistive device

#133
20200166588
2020-05-28

Semiconductor sensor structure

#134
20200166587
2020-05-28

Magnetic sensor

#135
20200136024
2020-04-30

Apparatus for spin injection enhancement and method of making the same

#136
20200136022
2020-04-30

Magnetic device and magnetic random access memory

#137
20200132728
2020-04-30

Insulated current sensor

#138
20200106002
2020-04-02

Magnetic random access memory assisted devices and methods of making

#139
20200091416
2020-03-19

Semiconductor device

#140
20200091415
2020-03-19

Integrated magnetic concentrator and connection

#141
20200083439
2020-03-12

Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element

#142
20200083437
2020-03-12

Magnetoresistive element having a novel cap multilayer

#143
20200075073
2020-03-05

Spin current magnetization rotational magnetic element, spin current magnetization rotational magnetoresistance effect element, and magnetic memory

#144
20200066970
2020-02-27

Current sensor packages with through hole in semiconductor

#145
20200035911
2020-01-30

Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory

#146
20200035909
2020-01-30

Combined spin-orbit torque and spin-transfer torque switching for magnetoresistive devices and methods therefor

#147
20190386206
2019-12-19

Current sensor package with continuous insulation

#148
20190386062
2019-12-19

Monolithic integrated circuits with multiple types of embedded non-volatile memory devices

#149
20190377037
2019-12-12

METHOD FOR PROVIDING A MAGNETIC ROTARY SENSOR ENABLED BY SPIN-ORBIT TORQUE AND SPIN CURRENT

#150
20190353717
2019-11-21

Concept for compensating for a mechanical stress of a hall sensor circuit integrated into a semiconductor substrate

#151
20190325932
2019-10-24

Magnetoelectric spin orbit logic with paramagnets

#152
20190319183
2019-10-17

Spin-current magnetization rotational element and spin orbit torque type magnetoresistance effect element

#153
20190319068
2019-10-17

Hall sensor with buried hall plate

#154
20190305217
2019-10-03

Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy

#155
20190305216
2019-10-03

High blocking temperature spin orbit torque electrode

#156
20190305212
2019-10-03

Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory

#157
20190305042
2019-10-03

Spin orbit torque magnetic random access memory structures and methods for fabrication

#158
20190280190
2019-09-12

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

#159
20190267542
2019-08-29

Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and spin-orbit-torque magnetization rotational element manufacturing method

#160
20190267541
2019-08-29

Method for stabilizing spin element and method for manufacturing spin element

#161
20190259936
2019-08-22

Hall element for 3-D sensing and method for producing the same

#162
20190259809
2019-08-22

Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for dual bit operation and methods for fabricating the same

#163
20190221733
2019-07-18

Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device

#164
20190214555
2019-07-11

Semiconductor device, and method for manufacturing the same

#165
20190207094
2019-07-04

Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer

#166
20190207084
2019-07-04

Spin hall effect (SHE) assisted three-dimensional spin transfer torque magnetic random access memory (STT-MRAM)

#167
20190206931
2019-07-04

Three-dimensional magnetic memory devices

#168
20190206603
2019-07-04

Spin-orbit torque type magnetization rotation element, spin-orbit torque magnetoresistance effect element, and method of manufacturing spin-orbit torque type magnetization rotation element

#169
20190206602
2019-07-04

Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method

#170
20190189909
2019-06-20

Magnetic memory

#171
20190173428
2019-06-06

Phase-locked spin torque oscillator array

#172
20190173001
2019-06-06

Electronic device

#173
20190164586
2019-05-30

Spin-orbit torque MRAMs and method for fabricating the same

#174
20190157342
2019-05-23

Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors

#175
20190148624
2019-05-16

Hall element for 3-D sensing and method for producing the same

#176
20190139568
2019-05-09

Beta tungsten thin films with giant spin Hall effect for use in compositions and structures with perpendicular magnetic anisotropy

#177
20190103551
2019-04-04

Isolated hall effect element with improved electro-magnetic isolation

#178
20190097126
2019-03-28

Hall effect sensor with enhanced sensitivity and method for producing the same

#179
20190086484
2019-03-21

Vertical hall-effect sensor for detecting two-dimensional in-plane magnetic fields

#180
20190081233
2019-03-14

Techniques for forming logic including integrated spin-transfer torque magnetoresistive random-access memory

#181
20190074432
2019-03-07

Si-BASED SPINTRONICS DEVICES

#182
20190074431
2019-03-07

Semiconductor device

#183
20190074043
2019-03-07

Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device

#184
20190067562
2019-02-28

Signal isolator having interposer

#185
20190049529
2019-02-14

Arrangements for Hall effect elements and vertical epi resistors upon a substrate

#186
20190044057
2019-02-07

Hall element module

#187
20190036012
2019-01-31

Well-based vertical Hall element with enhanced magnetic sensitivity

#188
20190036011
2019-01-31

Hall element for 3-D sensing and method for producing the same

#189
20190013354
2019-01-10

Damascene-based approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures

#190
20190006581
2019-01-03

Magnetic memory devices based on 4D and 5D transition metal perovskites

#191
20190006416
2019-01-03

Approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures

#192
20180358543
2018-12-13

Magnetic sensor using spin hall effect

#193
20180358542
2018-12-13

Gate voltage controlled perpendicular spin orbit torque MRAM memory cell

#194
20180356920
2018-12-13

Electronic device, manufacturing method and operation method thereof, electronic copy system

#195
20180351085
2018-12-06

Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory

#196
20180351084
2018-12-06

SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT

#197
20180351083
2018-12-06

Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory

#198
20180351082
2018-12-06

Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory

#199
20180350417
2018-12-06

Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory

#200
20180337326
2018-11-22

Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element

#201
20180287052
2018-10-04

Magnetic structures including FePd

#202
20180277747
2018-09-27

Hall element

#203
20180231620
2018-08-16

Charge-carrier hall-effect sensor

#204
20180217212
2018-08-02

Magnetic sensor, a magnetic detection apparatus, and a magnetic detection method

#205
20180198061
2018-07-12

Hall element for 3-D sensing and method for producing the same

#206
20180182954
2018-06-28

Apparatus for spin injection enhancement and method of making the same

#207
20180182953
2018-06-28

Semiconductor element with hall element and sealing resin

#208
20180175285
2018-06-21

Electronic device, topological insulator, fabrication method of topological insulator and memory device

#209
20180174634
2018-06-21

Magnetic memory device

#210
20180159025
2018-06-07

Semiconductor device having vertical hall element

#211
20180130849
2018-05-10

Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors

#212
20180123023
2018-05-03

Well-based vertical hall element with enhanced magnetic sensitivity

#213
20180123022
2018-05-03

Magnetic memory

#214
20180123021
2018-05-03

Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device

#215
20180122460
2018-05-03

3D magnetic memory device based on pure spin currents

#216
20180102473
2018-04-12

Sensor and method for producing same

#217
20180090678
2018-03-29

Durable miniature gas composition detector having fast response time

#218
20180074137
2018-03-15

Hall effect sensing element

#219
20180061482
2018-03-01

High-density magnetic memory device

#220
20180047893
2018-02-15

Hall effect device

#221
20180040810
2018-02-08

Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same

#222
20180013058
2018-01-11

Magnetoelectric converting element and module utilizing the same

#223
20170358736
2017-12-14

METHOD FOR MANUFACTURING A HALL SENSOR

#224
20170345998
2017-11-30

Method for manufacturing semiconductor devices

#225
20170338021
2017-11-23

Beta tungsten thin films with giant spin hall effect for use in compositions and structures with perpendicular magnetic anisotropy

#226
20170328964
2017-11-16

Sensor module and method of manufacture

#227
20170324028
2017-11-09

Component with reduced stress forces in the substrate

#228
20170317271
2017-11-02

Method for doping an active hall effect region of a hall effect device

#229
20170301726
2017-10-19

Hall sensor with buried hall plate

#230
20170294577
2017-10-12

MAGNETIC SENSOR AND METHOD OF MANUFACTURING THE SAME

#231
20170288131
2017-10-05

INTEGRATED HALL EFFECT SENSORS WITH VOLTAGE CONTROLLABLE SENSITIVITY

#232
20170271575
2017-09-21

Magnetic sensor and method of manufacturing the same

#233
20170271401
2017-09-21

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