209037 ⎘
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof for Hall-effect devices
MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE
#2SOT MRAM structure and fabricating method of the same
#3MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE AND METHOD OF FORMING THE SAME
#4Magnetic memory and manufacturing method thereof
#5MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
#6Highly textured 001 BiSb and materials for making same
#7VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES
#8MEMORY CELL, MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
#9SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#10SPIN-ORBIT-TORQUE BASED MAGNETIC SENSOR AND A MAGNETIC FIELD MEASUREMENT METHOD USING A MAGNETIC SENSOR
#11SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#12SPIN-ORBIT READOUT USING TRANSITION METAL DICHALCOGENIDES AND PROXIMITIZED GRAPHENE
#13Current sensor integrated circuit with a dual gauge lead frame
#14EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY
#15MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR MAGNETIC LAYERS AND METHOD OF MANUFACTURING SAME
#16Memory Device Including Bottom Electrode Bridges and Method of Manufacture
#17Memory structure and formation method thereof
#18MULTIFERROIC TUNNEL JUNCTION MEMORY DEVICE AND RELATED METHODS
#19Semiconductor device and method for fabricating the same
#20Doping process to refine grain size for smoother BiSb film surface
#21SYNTHETIC ANTIFERROMAGNET-BASED PROBABILISTIC COMPUTING DEVICES
#22Ferromagnetic free layer, preparation method and application thereof
#23Semiconductor device with passivated magnetic concentrator
#24Hall sensor with dielectric isolation and p-n junction isolation
#25MAGNETIZATION ROTATION ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ARRAY, HIGH FREQUENCY DEVICE, AND METHOD FOR MANUFACTURING MAGNETIZATION ROTATION ELEMENT
#26Semiconductor device and method for fabricating the same
#27Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ)
#28Semiconductor device and method for fabricating the same
#29MAGNETIC FILM, MAGNETORESISTIVE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING MAGNETIC FILM
#30MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
#31Memory device
#32Spin-orbit torque and spin-transfer torque magnetoresistive random-access memory stack
#33MATERIALS EXHIBITING TRANSPORT PROPERTIES SPECIFIC TO WEYL FERMIONS AND MAGNETRESISTANCE DEVICES BASED ON SUCH MATERIALS
#34MAGNETORESISTIVE DEVICES AND METHODS OF FABRICATING MAGNETORESISTIVE DEVICES
#35Spin-orbit-torque magnetoresistive random-access memory with integrated diode
#36Insulated current sensor
#37Spin-orbit-torque magnetoresistive random-access memory
#38Stacked spin-orbit-torque magnetoresistive random-access memory
#39Magnetic memory device
#40MEMORY DEVICE AND FORMATION METHOD THEREOF
#41Semiconductor device and manufacturing method thereof
#42DOMAIN WALL MOTION TYPE MAGNETIC RECORDING ELEMENT
#43High-temperature three-dimensional hall sensor with real-time working temperature monitoring function and manufacturing method therefor
#44Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line
#45THREE-DIMENSIONAL (3D) MAGNETIC MEMORY DEVICES COMPRISING A MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A METALLIC BUFFER LAYER
#46MAGNETIC STRUCTURE CAPABLE OF FIELD-FREE SPIN-ORBIT TORQUE SWITCHING AND PRODUCTION METHOD AND USE THEREOF
#47Controlling a quantum point junction on the surface of an antiferromagnetic topological insulator
#48Semiconductor device with CMOS process based hall sensor and manufacturing method
#49Weyl semimetal material for magnetic tunnel junction
#50METHOD FOR THE PRODUCTION OF A POLYMER COATED GRAPHENE LAYER STRUCTURE AND GRAPHENE LAYER STRUCTURE
#51Memory device
#52Magnetoresistance effect element and magnetic memory
#53Memory device, method of forming the same, and memory array
#54Magnetic device
#55HALL INTEGRATED SENSOR AND CORRESPONDING MANUFACTURING PROCESS
#56Spin current magnetization rotational element
#57SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY
#58Semiconductor device and manufacturing method of semiconductor device
#59Memory device and manufacturing method thereof
#60Magnetoresistive devices and methods of fabricating magnetoresistive devices
#61SOT-MRAM with shared selector
#62MAGNETIZATION ROTATION ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING SPIN-ORBIT TORQUE WIRING
#63Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same
#64Magnetic field sensor and methods of fabricating a magnetic field sensor
#65Spin-orbit torque (SOT)-based magnetic tunnel junction and method of fabricating the same
#66Magnetic device and magnetic random access memory
#67Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
#68Magnetic sensor device
#69Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
#70Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
#71Current sensor package with continuous insulation
#72Integrated device and neuromorphic device
#73Method of providing an air- and/or moisture-barrier coating on a two-dimensional material
#74Silicon hall sensor with low offset and drift compensation coils
#75Hall-effect sensor with reduced offset voltage
#76Spin-orbit torque device, method for fabricating a spin-orbit torque device and method for switching a switchable magnetization of a spin-orbit torque device
#77STT-SOT hybrid magnetoresistive element and manufacture thereof
#78Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistance effect element, magnetic memory, and reservoir element
#79Semiconductor device and method of forming the same
#80Hall integrated circuit and corresponding method of manufacturing of a hall integrated circuit using wafer stacking
#81SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT
#82SOT differential reader and method of making same
#83Storage element, semiconductor device, magnetic recording array, and method of manufacturing storage element
#84Micro-electromechanical device having a soft magnetic material electrolessly deposited on a palladium layer coated metal beam
#85Magnetic tunneling junction with synthetic free layer for SOT-MRAM
#86Magnetic memory device
#87SOI semiconductor structure and method for manufacturing an SOI semiconductor structure
#88Strained ferromagnetic hall metal SOT layer
#89Spin-orbit torque MRAM structure and manufacture thereof
#90Reservoir element and neuromorphic element
#91Hall effect sensor devices and methods of forming hall effect sensor devices
#92Semiconductor stack for hall effect device
#93Stacked spin-orbit-torque magnetoresistive random-access memory
#94Magnetoresistive devices and methods therefor
#95Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element
#96Hall-effect sensor package with added current path
#97Nanometer scale nonvolatile memory device and method for storing binary and quantum memory states
#98Magnetic memory
#99Current transducer with integrated primary conductor
#100Hall sensors with a three-dimensional structure
#101Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method
#102SOT-MRAM with shared selector
#103Spin-orbit torque-based switching device and method of fabricating the same
#104Integration scheme for three terminal spin-orbit-torque (SOT) switching devices
#105Power device, system including the power device, method for manufacturing the power device, and method for controlling the power device
#106Spin-current magnetization rotational element and spin orbit torque type magnetoresistance effect element
#107Electrical contacts for low dimensional materials
#108MRAM device having self-aligned shunting layer
#109Current sensor and method for manufacturing current sensor
#110Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
#111Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device
#112Triaxial magnetic sensor for measuring magnetic fields, and manufacturing process thereof
#113Semiconductor device with embedded magnetic flux concentrator
#114Method of making graphene structures and devices
#115Hall-effect sensor package with added current path
#116Spin-orbit-torque type magnetoresistance effect element and magnetic memory
#117Spin orbit memory devices with dual electrodes, and methods of fabrication
#118Spin orbit memory devices with reduced magnetic moment and methods of fabrication
#119Three-dimensional (3D) magnetic memory devices comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
#120Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer
#121Hall effect sensors with tunable sensitivity and/or resistance
#122Manufacturing method for multilayer structure of magnetic body and BiSb layer, magnetoresistive memory, and pure spin injection source
#123Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
#124Hall effect sensor with low offset and high level of stability
#125In-plane spin orbit torque magnetoresistive stack/structure and methods therefor
#126Component semiconductor structure
#127Spin orbit torque memory devices and methods of fabrication
#128Perpendicular magnetoelectric spin orbit logic
#129Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory
#130Current sensor packages
#131Magnetic memory device
#132Method of manufacturing a magnetoresistive device
#133Semiconductor sensor structure
#134Magnetic sensor
#135Apparatus for spin injection enhancement and method of making the same
#136Magnetic device and magnetic random access memory
#137Insulated current sensor
#138Magnetic random access memory assisted devices and methods of making
#139Semiconductor device
#140Integrated magnetic concentrator and connection
#141Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element
#142Magnetoresistive element having a novel cap multilayer
#143Spin current magnetization rotational magnetic element, spin current magnetization rotational magnetoresistance effect element, and magnetic memory
#144Current sensor packages with through hole in semiconductor
#145Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory
#146Combined spin-orbit torque and spin-transfer torque switching for magnetoresistive devices and methods therefor
#147Current sensor package with continuous insulation
#148Monolithic integrated circuits with multiple types of embedded non-volatile memory devices
#149METHOD FOR PROVIDING A MAGNETIC ROTARY SENSOR ENABLED BY SPIN-ORBIT TORQUE AND SPIN CURRENT
#150Concept for compensating for a mechanical stress of a hall sensor circuit integrated into a semiconductor substrate
#151Magnetoelectric spin orbit logic with paramagnets
#152Spin-current magnetization rotational element and spin orbit torque type magnetoresistance effect element
#153Hall sensor with buried hall plate
#154Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
#155High blocking temperature spin orbit torque electrode
#156Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
#157Spin orbit torque magnetic random access memory structures and methods for fabrication
#158METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#159Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and spin-orbit-torque magnetization rotational element manufacturing method
#160Method for stabilizing spin element and method for manufacturing spin element
#161Hall element for 3-D sensing and method for producing the same
#162Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for dual bit operation and methods for fabricating the same
#163Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device
#164Semiconductor device, and method for manufacturing the same
#165Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
#166Spin hall effect (SHE) assisted three-dimensional spin transfer torque magnetic random access memory (STT-MRAM)
#167Three-dimensional magnetic memory devices
#168Spin-orbit torque type magnetization rotation element, spin-orbit torque magnetoresistance effect element, and method of manufacturing spin-orbit torque type magnetization rotation element
#169Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method
#170Magnetic memory
#171Phase-locked spin torque oscillator array
#172Electronic device
#173Spin-orbit torque MRAMs and method for fabricating the same
#174Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
#175Hall element for 3-D sensing and method for producing the same
#176Beta tungsten thin films with giant spin Hall effect for use in compositions and structures with perpendicular magnetic anisotropy
#177Isolated hall effect element with improved electro-magnetic isolation
#178Hall effect sensor with enhanced sensitivity and method for producing the same
#179Vertical hall-effect sensor for detecting two-dimensional in-plane magnetic fields
#180Techniques for forming logic including integrated spin-transfer torque magnetoresistive random-access memory
#181Si-BASED SPINTRONICS DEVICES
#182Semiconductor device
#183Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device
#184Signal isolator having interposer
#185Arrangements for Hall effect elements and vertical epi resistors upon a substrate
#186Hall element module
#187Well-based vertical Hall element with enhanced magnetic sensitivity
#188Hall element for 3-D sensing and method for producing the same
#189Damascene-based approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures
#190Magnetic memory devices based on 4D and 5D transition metal perovskites
#191Approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures
#192Magnetic sensor using spin hall effect
#193Gate voltage controlled perpendicular spin orbit torque MRAM memory cell
#194Electronic device, manufacturing method and operation method thereof, electronic copy system
#195Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory
#196SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT
#197Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
#198Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory
#199Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory
#200Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element
#201Magnetic structures including FePd
#202Hall element
#203Charge-carrier hall-effect sensor
#204Magnetic sensor, a magnetic detection apparatus, and a magnetic detection method
#205Hall element for 3-D sensing and method for producing the same
#206Apparatus for spin injection enhancement and method of making the same
#207Semiconductor element with hall element and sealing resin
#208Electronic device, topological insulator, fabrication method of topological insulator and memory device
#209Magnetic memory device
#210Semiconductor device having vertical hall element
#211Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
#212Well-based vertical hall element with enhanced magnetic sensitivity
#213Magnetic memory
#214Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device
#2153D magnetic memory device based on pure spin currents
#216Sensor and method for producing same
#217Durable miniature gas composition detector having fast response time
#218Hall effect sensing element
#219High-density magnetic memory device
#220Hall effect device
#221Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same
#222Magnetoelectric converting element and module utilizing the same
#223METHOD FOR MANUFACTURING A HALL SENSOR
#224Method for manufacturing semiconductor devices
#225Beta tungsten thin films with giant spin hall effect for use in compositions and structures with perpendicular magnetic anisotropy
#226Sensor module and method of manufacture
#227Component with reduced stress forces in the substrate
#228Method for doping an active hall effect region of a hall effect device
#229Hall sensor with buried hall plate
#230MAGNETIC SENSOR AND METHOD OF MANUFACTURING THE SAME
#231INTEGRATED HALL EFFECT SENSORS WITH VOLTAGE CONTROLLABLE SENSITIVITY
#232Magnetic sensor and method of manufacturing the same
#233Semiconductor device with hall elements and magnetic flux concentrator
#234Semiconductor device having hall elements formed in a semiconductor substrate and a magnetic body flux concentrator
#235Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
#236Magnetic sensor and method of manufacturing the same
#2373-contact vertical hall sensor elements connected in a ring and related devices, systems, and methods
#238Hall-effect sensor isolator
#239Carbon nanostructure device fabrication utilizing protect layers
#240Method of making a current sensor and current sensor
#241Methods for magnetic sensor having non-conductive die paddle
#242Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof
#243MAGNETIC FIELD CURRENT SENSORS
#244Construction of a hall-effect sensor in a buried isolation region
#245Spin current devices and methods of fabrication thereof
#246Vertical hall effect element with improved sensitivity
#247Hall effect device
#248MAGNETO-ELECTRIC TRANSDUCER AND METHOD FOR MANUFACTURING THE SAME
#249Semiconductor device and manufacturing method thereof
#250Semiconductor device
#251Modification of electrical properties of topological insulators
#252Method for manufacturing the magnetic field sensor module
#253Magnetic sensor and method of fabricating the same
#254Hall effect sensing element
#255Semiconductor devices having insulating substrates and methods of formation thereof
#256Method for doping an active Hall effect region of a Hall effect device and Hall effect device having a doped active Hall effect region
#257Magnetic sensor having a recessed die pad
#258Magnetic sensor and method of manufacturing the same
#259MRAM having spin hall effect writing and method of making the same
#260Vertical hall effect sensor
#261Methods and apparatus for magnetic sensor having non-conductive die paddle
#262MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME
#263Vertical hall element
#264Sensor assembly for use in sensor bearings
#265High stability spintronic memory
#266Durable miniature gas composition detector having fast response time
#267Vertical hall sensors with reduced offset error
#268Three 3-contact vertical hall sensor elements connected in a ring and related devices, systems, and methods
#269Semiconductor component comprising magnetic field sensor
#270Hall effect device
#271Packaging for an electronic device
#272Vertical hall sensor, hall sensor module and method for manufacturing the same
#273Method for manufacturing a hall sensor assembly and a hall sensor assembly
#274Integrated circuits with hall effect sensors and methods for producing such integrated circuits
#275Conductive pad structure and method of fabricating the same
#276Spin hall effect magnetic apparatus, method and applications
#277Thermoelectric conversion element and manufacturing method for the same
#278Sensor device and sensor arrangement
#279THERMOELECTRIC CONVERSION ELEMENT, USE OF THE SAME, AND METHOD OF MANUFACTURING THE SAME
#280Method for processing a carrier, a carrier, an electronic device and a lithographic mask
#281Magnetic memory cell and method of manufacturing the same
#282Thermoelectric conversion element and method for manufacturing the same
#283Manufacturable spin and spin-polaron interconnects
#284MULTI-LEVEL CELL DESIGNS FOR HIGH DENSITY LOW POWER GSHE-STT MRAM
#285High density low power GSHE-STT MRAM
#286High density low power GSHE-STT MRAM
#287Multi-purpose sensor
#288Thermoelectric conversion element and manufacturing method for same
#289Quantum well device with lateral electrodes
#290Forming magnetic microelectromechanical inductive components
#291Forming magnetic microelectromechanical inductive components
#292Hall effect sensor with graphene detection layer
#293Vertical hall effect sensor
#294Low offset and high sensitivity vertical hall effect sensor
#295Hybridized oxide capping layer for perpendicular magnetic anisotropy
#296MRAM device and fabrication method thereof
#297Magnetic sensor and method of manufacture thereof
#298SEMICONDUCTOR STRUCTURE FOR ELECTROMAGNETIC INDUCTION SENSING AND A METHOD OF MANUFACTURING THE SAME
#299METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING MAGNETIC TUNNEL JUNCTION AND RELATED DEVICE
#300Micro-electromechanical device having a soft magnetic material electrolessly deposited on a metal layer