209043 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
Drift mitigation for resistive memory devices
#2Crossbar memory array in front end of line
#3Contact resistance of a metal liner in a phase change memory cell
#4Back end of line embedded RRAM structure with low forming voltage
#5Storage device
#6Resistance change device and storage device
#7Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#8Display material
#9Two dimensional materials for use in ultra high density information storage and sensor devices
#10Analog nonvolatile memory cells using dopant activation
#11Horizontal programmable conducting bridges between conductive lines
#12Conductive Oxide Diffusion Barrier for Laser Crystallization
#13Cross-point memory array and related fabrication techniques
#14Phase change memory device and method of programming a phase change memory device
#15Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#16Memory device and manufacturing method thereof
#17SWITCHING DEVICE AND STORAGE UNIT, AND MEMORY SYSTEM
#18SEMICONDUCTOR MEMORY DEVICE
#19Memory cell comprising a phase-change material
#20Memory cell
#21Three-dimensional memory apparatuses and methods of use
#22Horizontal programmable conducting bridges between conductive lines
#23RRAM cell structure with laterally offset BEVA/TEVA
#24Resistive switching devices containing lithium titanate, and associated systems and methods
#25Memory cell with independently-sized elements
#26Phase change memory
#27Phase-change material (PCM) RF switch with top metal contact to heating element
#28Phase-change material (PCM) RF switch having contacts to PCM and heating element
#29Planar single-crystal phase change material device
#30Phase-change material (PCM) RF switch with contacts to PCM and heating element
#31Method for fabricating contacts in a phase-change material (PCM) RF switch having a heating element
#32Phase-change memory cell with vanadium oxide based switching layer
#33Method of manufacturing PCM RF switch
#34Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element
#35Device including PCM RF switch integrated with group III-V semiconductors
#36Methods of forming silicon-containing dielectric materials and methods of forming a semiconductor device comprising nitrogen radicals and oxygen-containing, silicon-containing, or carbon-containing precursors
#37Switch device and storage unit
#38Cross-point memory array and related fabrication techniques
#39Cross-point memory array and related fabrication techniques
#40Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
#41Semiconductor structures including liners comprising alucone and related methods
#42Threshold switching contact in a field-effect transistor as a selector
#43Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays
#44Storage device and method of manufacturing storage device
#45Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same
#46Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#47Damascene process for forming three-dimensional cross rail phase change memory devices
#48SEMICONDUCTOR DEVICE HAVING DATA STORAGE PATTERN
#49Crosspoint fill-in memory cell with etched access device
#50Variable resistance memory device and method of manufacturing the same
#51Semiconductor devices and methods of manufacturing the same
#52Methods and processes for forming devices from correlated electron material (CEM)
#53Apparatuses including memory devices and related electronic systems
#54Methods of forming a memory structure
#55Crosspoint fill-in memory cell with etched access device
#56Memory cell comprising a phase-change material
#57RRAM cell structure with laterally offset BEVA/TEVA
#58Memory cell with independently-sized elements
#59Programmable metamaterial
#60Semiconductor device structures including silicon-containing dielectric materials
#61Memory structures having reduced via resistance
#62Memory cells, memory arrays, and methods of forming memory cells and arrays
#63Self-aligned interconnection for integrated circuits
#64Methods of forming an array of cross point memory cells
#65Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#66Multi-level phase change device
#67Phase change memory
#68Semiconductor device having data storage pattern
#69Memory device including a variable resistance material layer
#70Storage device having variable resistance layer
#71Methods and processes for forming devices from correlated electron material (CEM)
#72Switch device and storage unit
#73Method for fabricating a semiconductor device
#74Semiconductor device and method for fabricating the same
#75Methods of operating memory devices and electronic systems
#76Three-dimensional memory apparatus and method of manufacturing the same
#77Three-dimensional memory apparatuses and methods of use
#78Array of cross point memory cells and methods of forming an array of cross point memory cells
#79Dynamic random access memory and fabrication method thereof
#80Clamp elements for phase change memory arrays
#81Arrays of memory cells and methods of forming an array of memory cells
#82Bromine containing silicon precursors for encapsulation layers
#83Superlattice memory having GeTe layer and nitrogen-doped SbTelayer and memory device having the same
#84Method and system for providing a magnetic cell usable in spin transfer torque applications and including a switchable shunting layer
#85Methods of forming an array of cross point memory cells
#86Variable resistance memory device and method of manufacturing the same
#87Switch device and storage unit
#88Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#89Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
#90Vertical memory structure with array interconnects and method for producing the same
#91Methods of forming memory cells
#92Phase change storage device with multiple serially connected storage regions
#93Semiconductor devices and methods of manufacturing the same
#94Methods of forming memory arrays
#95Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using same
#96Memory cell with independently-sized elements
#97Semiconductor memory device
#98Memory cell structure with resistance-change material and method for forming the same
#99Electronic device including switching element and semiconductor memory
#100Multi-level phase change device
#101RRAM cell structure with laterally offset BEVA/TEVA
#102Three-dimensional memory apparatuses and methods of use
#103Methods of forming memory devices having electrodes comprising nanowires
#104Bromine containing silicon precursors for encapsulation layers
#105Arrays of memory cells and methods of forming an array of memory cells
#106VARIABLE RESISTANCE MATERIAL LAYERS AND VARIABLE RESISTANCE MEMORY DEVICES INCLUDING THE SAME
#107Clamp elements for phase change memory arrays
#108Semiconductor device and method of fabricating the same
#109Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#110Array of cross point memory cells individually comprising a select device and a programmable device
#111Memory arrays having confined phase change material structures laterally surrounded with silicon nitride
#112Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#113Method of manufacturing a semiconductor integrated circuit device including a transistor with a vertical channel
#114Semiconductor structures including liners comprising alucone and related methods
#115Method for producing a device
#116Semiconductor device
#117Switch device and storage unit having a switch layer between first and second electrodes
#118Method for producing semiconductor device
#119Semiconductor device and method for producing semiconductor device
#120Methods of forming structures
#121Array Of Memory Cells, Methods Associated With Forming Memory Cells That Comprise Programmable Material, And Methods Associated With Forming Memory Cells That Comprise Selector Device Material
#122Forming self-aligned conductive lines for resistive random access memories
#123Vertical thin film transistors in non-volatile storage systems
#124Spin electronic memory, information recording method and information reproducing method
#125Apparatuses and operation methods associated with resistive memory cell arrays with separate select lines
#126Integrated phase change switch
#127Array of cross point memory cells and methods of forming an array of cross point memory cells
#128Phase change memory
#129Memory device
#130Semiconductor device structures including silicon-containing dielectric materials
#131Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques
#132Memory system
#133HEATING PHASE CHANGE MATERIAL
#134Semiconductor device structures with improved planarization uniformity, and related methods
#135Memory arrays and methods of forming memory arrays
#136Self-aligned interconnection for integrated circuits
#137Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device
#138Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device
#139Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device
#140Vertical type semiconductor device, fabrication method thereof and operation method thereof
#141Vertical type semiconductor device, fabrication method thereof and operation method thereof
#142Field effect transistor constructions and memory arrays
#143Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
#144Vertical bit line non-volatile memory systems and methods of fabrication
#145Semiconductor device and method of fabricating the same
#146Semiconductor constructions and methods of forming memory cells
#147Voltage-controlled resistor based on phase transition materials
#148Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence
#149Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence
#150Semiconductor device and manufacturing method thereof
#151RRAM cell structure with laterally offset BEVA/TEVA
#152Method of fabricating semiconductor integrated circuit having phase-change layer
#153Memory system
#154Memory cells having heaters with angled sidewalls
#155Phase change memory cell with heat shield
#156Morphology control of ultra-thin MeOx layer
#157Semiconductor elements stacked and bonded with an anisotropic conductive adhesive
#158RRAM cell structure with laterally offset BEVA/TEVA
#159Morphology control of ultra-thin MeOx layer
#160Integrated non-volatile memory elements, design and use
#161Phase change memory and method of fabricating the phase change memory
#1623D non-volatile memory having low-current cells and methods
#163Phase change memory cell with heat shield
#164Vertical bit line non-volatile memory systems and methods of fabrication
#165Strongly correlated nonvolatile memory element
#166Interactive greeting card
#167Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#168Memory device
#169Superlattice phase change memory including Sb2Te3 layers containing Zr
#170Nonvolatile memory device having an electrode interface coupling region
#171Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
#172Work function tailoring for nonvolatile memory applications
#173Resistive memory device and method for manufacturing the same
#174Self-aligned interconnection for integrated circuits
#175Method for non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
#176Adaptive resistive device and methods thereof
#177Semiconductor phase change memory using face center cubic crystalline phase change material
#178Memories with cylindrical read/write stacks
#179Resistive switching devices and methods of formation thereof
#180Memory cells having heaters with angled sidewalls
#181Variable resistive memory device and method of fabricating the same
#182Apparatuses and operation methods associated with resistive memory cell arrays with separate select lines
#183Germanium antimony telluride materials and devices incorporating same
#184Method for forming resistive switching memory elements with improved switching behavior
#185Work function tailoring for nonvolatile memory applications
#186Nonvolatile memory device having an electrode interface coupling region
#187Semiconductor phase change memory using multiple phase change layers
#188Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof
#189Non-volatile memory having 3D array of read/write elements with low current structures and methods thereof
#190Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#191Semiconductor phast change memory using multiple phase change layers
#192Superlattice recording layer for a phase change memory
#193NONVOLATILE MEMORY DEVICE
#194Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
#195Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
#196Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
#197Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#198Phase change memory that switches between crystalline phases
#199Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
#200Nonvolatile memory device and method of fabricating the same
#201Memory device made from stacked substrates bonded with a resin containing conductive particles
#202Solid-state memory device, data processing system, and data processing device
#203Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
#204Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#205Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
#206Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
#207Multi-bit phase change memory devices
#208NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
#209SOLID MEMORY
#210Semiconductor phase change memory using multiple phase change layers
#211SOLID MEMORY
#212Solid-state memory and semiconductor device
#213Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component
#214Modulation of resistivity in carbon-based read-writeable materials
#215Integrated circuit
#216Semiconductor device and driving method of the same
#217Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#218Integrated Circuit, Memory Module, and Method of Manufacturing an Integrated Circuit
#219Memory Cell Layout
#220Carbon diode array for resistivity changing memories
#221Semiconductor phase change memory using multiple phase change layers
#222Integrated circuit having a cell with a resistivity changing layer
#223Integrated circuit including logic portion and memory portion
#224Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device
#225Method of Manufacturing a Memory Device, Memory Device, Cell, Integrated Circuit, Memory Module, and Computing System
#226Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit
#227Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
#228Carbon memory
#229Semiconductor device and driving method of the same
#230Carbon filament memory and method for fabrication
#231Carbon filament memory and fabrication method
#232Memory element using reversible switching between SP2 and SP3 hybridized carbon
#233Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive
#234Multi-functional chalcogenide electronic devices having gain
#235Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
#236Heating phase change material
#237Phase change memory that switches between crystalline phases
#238PCM RF switch fabrication with subtractively formed heater
#239Te-free AsSeGe chalcogenides for selector devices and memory devices using same
#240Phase change memory and method of fabricating same
#241Semiconductor device including data storage pattern between isolation lines
#242Phase change memory electrode with multiple thermal interfaces
#243Semiconductor devices and electronic systems having memory structures
#244Dielectric doped, Sb-rich GST phase change memory
#245Semiconductor device and method for fabricating the same
#246Resistive RAM including air gaps between word lines and between vertical bit lines
#247Vertical memory structure with array interconnects and method for producing the same