209046 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory based on bulk electronic defects, e.g. trapping of electrons
SEMICONDUCTOR DEVICE
#2MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH DIELECTRIC MATERIAL
#3SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#4Three-dimensional semiconductor device having variable resistance structure
#5Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same
#6MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND RESISTIVE SWITCHING MEMORY DEVICE INCLUDING THE SAME
#7Electronic synaptic device and method for manufacturing same
#8Semiconductor laser diode integrated with memristor
#9Semiconductor structure and manufacturing method thereof
#10Resistive memory with embedded metal oxide fin for gradual switching
#11Method for controlling current path by using electric field, and electronic element
#12RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PREPARING THE SAME
#13THREE-DIMENSIONAL FERROELECTRIC MEMORY
#14Carbon-based volatile and non-volatile memristors
#15MULTIPLE GERMANIUM ATOM QUANTUM DOT AND DEVICES INCLUSIVE THEREOF
#16Resistive random access memory integrated under a vertical field effect transistor
#17DOPANT ACTIVATION ANNEAL FOR CORRELATED ELECTRON DEVICE
#18Semiconductor device and multiply-accumulate operation device
#19Resistive memory with embedded metal oxide fin for gradual switching
#20RRAM cell structure with laterally offset BEVA/TEVA
#21Semiconductor device and manufacturing method thereof
#22Selector devices with integrated barrier materials
#23Multiple silicon atom quantum dot and devices inclusive thereof
#24Forming and operating memory devices that utilize correlated electron material (CEM)
#25Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array
#26Switching device, method of fabricating the same, and non-volatile memory device having the same
#27Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array
#28ORGANIC MEMRISTOR
#29Methods and processes for forming devices from correlated electron material (CEM)
#30RRAM cell structure with laterally offset BEVA/TEVA
#31Semiconductor device and manufacturing method thereof
#32Method, system and device for testing correlated electron switch (CES) devices
#33Memory element
#34Semiconductor device and manufacturing method thereof
#35Current delivery and spike mitigation in a memory cell array
#36Memory cells and devices
#37Forming and operating memory devices that utilize correlated electron material (CEM)
#383D semiconductor device
#39NAND-TYPE FINFET DIELECTRIC RRAM
#40Method of manufacturing a memory device
#41Methods and apparatus for three-dimensional nonvolatile memory
#42Methods and processes for forming devices from correlated electron material (CEM)
#43FORMING NUCLEATION LAYERS IN CORRELATED ELECTRON MATERIAL DEVICES
#44Semiconductor random access memory and manufacturing method thereof
#45Variable resistance element and memory device
#46Threshold switching device, method for fabricating the same and electronic device including the same
#47Resistive random access memory having charge trapping layer, manufacturing method thereof, and operation thereof
#48Switching device, and resistive random access memory including the same as a selection device
#49Memory device
#50SWITCHING ELEMENT, RESISTIVE MEMORY DEVICE INCLUDING SWITCHING ELEMENT, AND METHODS OF MANUFACTURING THE SAME
#51Threshold switching device and electronic device including the same
#52Threshold switching device, method for fabricating the same and electronic device including the same
#53Method of manufacturing 3-D semiconductor device
#54Threshold switching device and electronic device including the same
#55RRAM cell structure with laterally offset BEVA/TEVA
#56METHOD FOR FORMING A METAL CAP IN A SEMICONDUCTOR MEMORY DEVICE
#57MIM/RRAM structure with improved capacitance and reduced leakage current
#58Resistive random access memory device embedding tunnel insulating layer and memory array using the same and fabrication method thereof
#59Semiconductor memory device
#60Variable resistor, non-volatile memory device using the same, and method of fabricating thereof
#61Method of forming controllably conductive oxide
#62Charge trapping memristor
#63Stacked memory chip having reduced input-output load, memory module and memory system including the same
#64Monolithic three dimensional memory arrays with staggered vertical bit lines and dual-gate bit line select transistors
#65Mechanical forming of resistive memory devices
#66RRAM cell structure with laterally offset BEVA/TEVA
#67Vertical bit line wide band gap TFT decoder
#68Non-volatile resistive-switching memories
#69Semiconductor device and method of manufacturing the same
#70Morphology control of ultra-thin MeOx layer
#71Resistive-switching memory elements having improved switching characteristics
#72Resistive-switching memory element
#73Method of forming controllably conductive oxide
#74Reduction of forming voltage in semiconductor devices
#75Semiconductor memory device
#76Non-volatile resistive-switching memories
#77RRAM cell structure with laterally offset BEVA/TEVA
#78Confined defect profiling within resistive random memory access cells
#79Nonvolatile Resistive Memory Element With an Integrated Oxygen Isolation Structure
#80Resistance change type memory device with three-dimensional structure
#81Semiconductor device
#82Structures for resistance random access memory and methods of forming the same
#83ALD processing techniques for forming non-volatile resistive switching memories
#84Surface treatment to improve resistive-switching characteristics
#85Sequential atomic layer deposition of electrodes and resistive switching components
#86Memory device having an integrated two-terminal current limiting resistor
#87Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
#88Resistive-switching memory elements having improved switching characteristics
#89Resistance changing memory with a first driver closer than a second driver
#90Semiconductor device and method of manufacturing the same
#91Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer
#92Methods for forming a semiconductor device including fine patterns
#93Method of forming a fine pattern of a semiconductor device
#94Three-dimensional semiconductor devices
#95Controlled localized defect paths for resistive memories
#96Nonvolatile memory device having an electrode interface coupling region
#97ALD processing techniques for forming non-volatile resistive switching memories
#98DEFECT ENHANCEMENT OF A SWITCHING LAYER IN A NONVOLATILE RESISTIVE MEMORY ELEMENT
#99Non-volatile resistive-switching memories
#100Resistive-switching memory element
#101Semiconductor memory device
#102Reduction of forming voltage in semiconductor devices
#103Resistive-switching memory elements having improved switching characteristics
#104Semiconductor memory device
#105Interfacial oxide used as switching layer in a nonvolatile resistive memory element
#106Memory device having an integrated two-terminal current limiting resistor
#107Memory cell having an integrated two-terminal current limiting resistor
#108Memory device having an integrated two-terminal current limiting resistor
#109Nonvolatile resistive memory element with an integrated oxygen isolation structure
#110Nonvolatile resistive memory element with a metal nitride containing switching layer
#111ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHODS OF FORMING THE SAME
#112Non-volatile memory semiconductor storage including contact plug
#113Nonvolatile memory element and method for manufacturing same
#114Memory device
#115Magnetic sensors having perpendicular anisotropy free layer
#116Non-volatile resistive switching memories formed using anodization
#117FERROELECTRIC DIODE AND PHOTOVOLTAIC DEVICES AND METHODS
#118Surface treatment to improve resistive-switching characteristics
#119Work function tailoring for nonvolatile memory applications
#120Nonvolatile memory device having an electrode interface coupling region
#121Semiconductor memory device and method of manufacturing the same
#122Non volatile semiconductor memory device and manufacturing method thereof
#123Confinement techniques for non-volatile resistive-switching memories
#124Resistive switching memory element including doped silicon electrode
#125Resistive switches
#126Method of forming non-volatile resistive-switching memories
#127Metal-insulator-metal-insulator-metal (MIMIM) memory device
#128Methods for patterning microelectronic devices using two sacrificial layers
#129Surface treatment to improve resistive-switching characteristics
#130Semiconductor memory device
#131ALD processing techniques for forming non-volatile resistive-switching memories
#132Non-volatile resistance-switching thin film devices
#133Semiconductor memory device
#134Confinement techniques for non-volatile resistive-switching memories
#135Non-volatile resistive-switching memories formed using anodization
#136NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
#137Structures for resistance random access memory and methods of forming the same
#138Resistive memory device and method for fabricating the same
#139Resistive-switching memory elements having improved switching characteristics
#140Resistive switching memory element including doped silicon electrode
#141Controlled localized defect paths for resistive memories
#142Non-volatile semiconductor storage device including contact plug
#143Method of manufacturing semiconductor memory device, and semiconductor memory device
#144NON-VOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME
#145Nonvolatile resistive memory devices
#146MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
#147ALD processing techniques for forming non-volatile resistive-switching memories
#148Resistance change memory, and data write and erase methods thereof
#149Non-volatile resistive-switching memories formed using anodization
#150Confinement techniques for non-volatile resistive-switching memories
#151Reduction of forming voltage in semiconductor devices
#152Surface treatment to improve resistive-switching characteristics
#153Non-volatile resistive-switching memories
#154Memory device including resistance-changing function body
#155Method of forming controllably conductive oxide
#156RESISTANCE-SWITCHING OXIDE THIN FILM DEVICES
#157Selection device for re-writable memory
#158Non-Volatile Polymer Bistability Memory Device
#159Method of selecting operating characteristics of a resistive memory device
#160Non-volatile resistance-switching oxide thin film devices
#161Multi-functional electronic devices
#162Multi-functional chalcogenide electronic devices having gain
#163Resistance-change nanocrystal memory
#164Resistive memory cell arrangement and a semiconductor memory including the same
#165Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator
#166Nonvolatile polymer bistability memory device using nano particles that are formed in polymer thin film and method of manufacturing the nonvolatile polymer bistability memory device
#167Memory device including resistance-changing function body
#168Memory device and method of making the same
#169Memory device electrode with a surface structure
#170Non-volatile multi-stable memory device and methods of making and using the same
#171Switching elements, resistive random access memory devices including the same, and methods of manufacturing the switching elements and the resistive random access memory devices