209049 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Details Radiation or particle beam assisted switching devices, e.g. optically controlled devices
ReRAM analog PUF using filament location
#2SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC DEVICE, AND RESERVOIR COMPUTING METHOD USING THE COMPUTING DEVICE
#3Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature
#4Optical switchable system and device
#5Antenna assisted ReRAM formation
#6Two dimensional materials for use in ultra high density information storage and sensor devices
#7RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR INITIALIZING THE SAME
#8Van der Waals heterostructure memory device and switching method
#9Optically switchable memory
#10Electrically rotatable antennas formed from an optically tunable material
#11Tunable hyperbolic metamaterials
#12System on chip (Soc) based on neural processor or microprocessor
#13System on chip (SoC) based on neural processor or microprocessor
#14RRAM cell structure with laterally offset BEVA/TEVA
#15Light-activated switching resistor, an optical sensor incorporating a light-activated switching resistor, and methods of using such devices
#16Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties
#17Non-equilibrium polaronic quantum phase-condensate based electrical devices
#18Electronic circuit and data storage system
#19RRAM cell structure with laterally offset BEVA/TEVA
#20Device for switchably influencing electromagnetic radiation, and method for obtaining such a device
#21RRAM cell structure with laterally offset BEVA/TEVA
#22System on chip (SoC) based on neural processor or microprocessor
#23Voltage regulation of device functional properties
#24Semiconductor device
#25System on chip (SoC) based on phase transition and/or phase change material
#26INORGANIC LIGHT EMITTING MEMORY AND METHOD FOR PRODUCING THE SAME
#27RRAM cell structure with laterally offset BEVA/TEVA
#28Semiconductor elements stacked and bonded with an anisotropic conductive adhesive
#29RRAM cell structure with laterally offset BEVA/TEVA
#30Phase change memory
#31Method of changing reflectance or resistance of a region in an optoelectronic memory device
#32Phase change memory devices, method for encoding, and methods for storing data
#33OPTOELECTRONIC MEMORY DEVICES
#34Method for fabricating a phase change memory
#35Phase change memory and method for fabricating the same
#36Switching element and application of the same
#37Photo-responsive memory resistor and method of operation
#38Memory device made from stacked substrates bonded with a resin containing conductive particles
#39Optoelectronic memory devices
#40Optical ovonic threshold switch
#41Device for storing data with optical addressing
#42Modulation of electromagnetic radiation with electrically controllable composite material
#43Memory device
#44Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive
#45Phase change memory device having semiconductor laser unit
#46Lateral phase change memory
#47Optoelectronic memory devices
#48Switching element, line-switching device and logic circuit
#49Non-volatile zero field splitting resonance memory
#50Lateral phase change memory
#51Re-recordable data storage medium utilizing conduction barrier
#52Light emitting diode memory
#53Memory cells having regions containing one or both of carbon and boron