209079 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Manufacturing; Modification of the switching material, e.g. post-treatment, doping by diffusion, e.g. photo-dissolution
Phase change memory with heater
#2ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME
#3Resistive random-access memory cell and manufacturing method thereof
#4MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND RESISTIVE SWITCHING MEMORY DEVICE INCLUDING THE SAME
#5Structure and method to fabricate resistive memory with vertical pre-determined filament
#6Analog nonvolatile memory cells using dopant activation
#7Structure and method to fabricate resistive memory with vertical pre-determined filament
#8Switching atomic transistor and method for operating same
#9Formation of a correlated electron material (CEM)
#10Memory element with a reactive metal layer
#11Resistive random access memory structure and manufacturing method thereof
#12RRAM cell structure with laterally offset BEVA/TEVA
#13REDUCING CELL-TO-CELL SWITCH VARIATION IN CROSSBAR ARRAY CIRCUITS
#14Scaled nanotube electrode for low power multistage atomic switch
#15Scaled nanotube electrode for low power multistage atomic switch
#16Symmetric bipolar switching in memristors for artificial intelligence hardware
#17CONTROLLING DOPANT CONCENTRATION IN CORRELATED ELECTRON MATERIALS
#18Resistive switching memory cell including switchable solid electrolyte having disclosed composition
#19Scaled nanotube electrode for low power multistage atomic switch
#20Memory element with a reactive metal layer
#21Method of fabricating semiconductor devices
#22Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elements
#23Artificial neural networks (ANN) including a resistive element based on doped semiconductor elements
#24Switching atomic transistor and method for operating same
#25Correlated electron device formed via conversion of conductive substrate to a correlated electron region
#26RRAM cell structure with laterally offset BEVA/TEVA
#27Semiconductor devices including liners, and related systems
#28Correlated electron material devices using dopant species diffused from nearby structures
#29Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making
#30Resistive random-access memory with protected switching layer
#31Sidewall insulated resistive memory devices
#32Correlated electron device formed via conversion of conductive substrate to a correlated electron region
#33Controlling dopant concentration in correlated electron materials
#34Memory element with a reactive metal layer
#35CEM switching device
#36Correlated electron material devices using dopant species diffused from nearby structures
#37Semiconductor structures including liners and related methods
#38SIDEWALL INSULATED RESISTIVE MEMORY DEVICES
#39Planar memory cell architectures in resistive memory devices
#40Method for producing a pillar-shaped phase change memory device
#41RRAM cell structure with laterally offset BEVA/TEVA
#42Method for fabricating electronic device with variable resistance material layer
#43Resistive memory devices with an oxygen-supplying layer
#44Dopant-driven phase transitions in correlated metal oxides
#45Memory device having electrically insulated reset gate
#46Method for forming a doped metal oxide for use in resistive switching memory elements
#47MEMRISTOR STRUCTURE WITH A DOPANT SOURCE
#48Shaping ReRAM conductive filaments by controlling grain-boundary density
#49Memory element with a reactive metal layer
#50RRAM cell structure with laterally offset BEVA/TEVA
#51Non-volatile resistive-switching memories
#52Creating an embedded ReRAM memory from a high-k metal gate transistor structure
#53Methods of selectively doping chalcogenide materials and methods of forming semiconductor devices
#54Method for fabricating an electronic device with anti-oxidation layers
#55Non-volatile resistive-switching memories
#56RRAM cell structure with laterally offset BEVA/TEVA
#57Methods of forming semiconductor device structures
#58Resistive random access memory and method for fabricating the same
#59Method of manufacturing resistance change layer using irradiation of electron beam and resistive random access memory device using the same
#60Nonvolatile memory elements having conductive structures with semimetals and/or semiconductors
#61Semiconductor device having a stack structure including a stoichiometric material and a non-stoichiometric material, and method for fabricating the same
#62PROGRAMMABLE IMPEDANCE MEMORY ELEMENTS AND CORRESPONDING METHODS
#63Memory element with a reactive metal layer
#64Memristor structure with a dopant source
#65Controlled localized defect paths for resistive memories
#66Nonvolatile memory device
#67Memory device
#68Semiconductor memory device and method of manufacturing the same
#69Non-volatile resistive-switching memories
#70Creating an embedded reram memory from a high-K metal gate transistor structure
#71Memory cell device and method of manufacture
#72Method of fabricating a microelectronic device with programmable memory
#73Resistive random access memory and method for fabricating the same
#74Methods of forming semiconductor device structures, and related structures
#75Resistive switching devices having alloyed electrodes and methods of formation thereof
#76Method for forming resistive switching memory elements
#77Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same
#78Processing phase change material to improve programming speed
#79Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same
#80Methods of self-aligned growth of chalcogenide memory access device
#81Method of manufacturing variable resistance memory device
#82Electrically actuated device and method of controlling the formation of dopants therein
#83Programmable metallization memory cells via selective channel forming
#84Memory cell device and method of manufacture
#85Method of forming non-volatile resistive-switching memories
#86Memristors with an electrode metal reservoir for dopants
#87Method for fabricating multi-resistive state memory devices
#88Memory element with a reactive metal layer
#89Phase-Change Memory Units and Phase-Change Memory Devices Using the Same
#90Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#91Resistive memory and methods of processing resistive memory
#92Method of fabrication of programmable memory microelectric device
#93Electrically actuated devices
#94Nonvolatile semiconductor memory device and method of manufacturing the same
#95Microelectronic programmable device and methods of forming and programming the same
#96Resistance memory devices and methods of forming the same
#97Resistive memory and methods of processing resistive memory
#98Multi-resistive state memory device with conductive oxide electrodes
#99Memristive device and methods of making and using the same
#100Processing phase change material to improve programming speed
#101Methods of self-aligned growth of chalcogenide memory access device
#102Chalcogenide nanoionic-based radio frequency switch
#103Memory device and CBRAM memory with improved reliability
#104Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#105Nonvolatile memory device with recording layer having two portions of different nitrogen amounts
#106Non-volatile multi-bit memory with programmable capacitance
#107Breakdown layer via lateral diffusion
#108Methods of forming fast ion conductors and memory devices comprising diffused metal ions
#109Controlled localized defect paths for resistive memories
#110Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
#111Programmable metallization memory cells via selective channel forming
#112Multi-resistive state memory device with conductive oxide electrodes
#113Chalcogenide nanoionic-based radio frequency switch
#114Microelectronic programmable device and methods of forming and programming the same
#115NON-VOLATILE MEMORY CELL FORMATION
#116Semiconductor memory device having variable resistance element and method for manufacturing the same
#117Planar programmable metallization memory cells
#118Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the same
#119Programmable metallization memory cells via selective channel forming
#120Resistance Changing Memory Cell
#121SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME
#122Non-volatile multi-bit memory with programmable capacitance
#123Non-volatile resistive-switching memories
#124Method of making a semiconductor device including a bridgeable material
#125Non-Volatile Memory Element with Improved Temperature Stability
#126Variable resistance element, method for producing the same, and nonvolatile semiconductor storage device
#127Resistive Memory Element
#128Method of Manufacturing a Memory Cell, Memory Cell, Integrated Circuit, and Memory Module
#129Integrated Circuits; Methods for Manufacturing an Integrated Circuit and Memory Module
#130Integrated circuits; methods for manufacturing an integrated circuit and memory module
#131Multi-resistive state memory device with conductive oxide electrodes
#132Resistively switching semiconductor memory
#133Integrated circuit having a cell with a resistivity changing layer
#134Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
#135Method for fabricating multi-resistive state memory devices
#136Microelectric programmable device and methods of forming and programming the same
#137Methods of fabricating multi-bit phase-change memory devices and devices formed thereby
#138Method of manufacturing an integrated circuit, an integrated circuit, and a memory module
#139Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell
#140Resistance variable memory devices with passivating material
#141Phase change memory devices including carbon-containing adhesive pattern
#142Differential negative resistance memory
#143Electro- and electroless plating of metal in the manufacture of PCRAM devices
#144Layer structures comprising chalcogenide materials
#145Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the Same
#146Memory cell device and method of manufacture
#147MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE
#148PMC memory with improved retention time and writing speed
#149Sputter deposition method for forming integrated circuit
#150Method of manufacturing non-volatile memory element
#151Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
#152Method for fabricating an integrated device comprising a structure with a solid electrolyte
#153Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry
#154Memory cell, memory device and method for the production thereof
#155Multi-resistive state element with reactive metal
#156Method of manufacture of a PCRAM memory cell
#157Solid electrolyte memory element and method for fabricating such a memory element
#158Programmable conductor memory cell structure and method therefor
#159Method for fabricating a resistive memory
#160Resistive memory element with shortened erase time
#161Integrated circuit including a memory apparatus and production method
#162Integration of 1T1R CBRAM memory cells
#163Microelectronic programmable device and methods of forming and programming the same
#164Method for improving the thermal characteristics of semiconductor memory cells
#165Electro- and electroless plating of metal in the manufacture of PCRAM devices
#166Semiconductor memory
#167Electro-and electroless plating of metal in the manufacture of PCRAM devices
#168Memory device, programmable resistance memory cell and memory array
#169Resistance variable memory elements based on polarized silver-selenide network growth
#170Programmable structure, an array including the structure, and methods of forming the same
#171Programmable structure, an array including the structure, and methods of forming the same
#172Graded GeSeconcentration in PCRAM
#173Resistively switching memory
#174Programmable microelectronic devices and methods of forming and programming same
#175Multi-resistive state element with reactive metal
#176Non-volatile zero field splitting resonance memory
#177Resistance variable memory elements based on polarized silver-selenide network growth
#178Method of forming resistance variable devices
#179Differential negative resistance memory
#180Chalcogenide phase-change non-volatile memory, memory device and method for fabricating the same
#181Processing phase change material to improve programming speed
#182Integrated circuit device and fabrication using metal-doped chalcogenide materials
#183Resistance variable device
#184Resistance variable memory elements and methods of formation
#185Lithium-drift based resistive processing unit for accelerating machine learning training