H01L47/02 - CPC Classification Index

ClassID:

209086 ⎘

H01L47/02 - CPC Classification

Classification description:

Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Gunn-effect devices or transferred electron devices

Sub-classes:

H01L47/023 » {controlled by electromagnetic radiation} 2
H01L47/026 » {Gunn diodes } 14

Recent Application in this class:

20210288110

2021-09-16

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

20200135809

2020-04-30

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

20200119274

2020-04-16

Electrical-current control of structural and physical properties via strong spin-orbit interactions in canted antiferromagnetic Mott insulators

20200111840

2020-04-09

Scalable, stackable, and BEOL-process compatible integrated neuron circuit

20190103441

2019-04-04

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

20180226453

2018-08-09

Scalable, stackable, and BEOL-process compatible integrated neuron circuit

20130207069

2013-08-15

METAL-INSULATOR TRANSITION SWITCHING DEVICES