215790 ⎘
Semiconductor lasers; Structural details or components not essential to laser action; Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth during growth of the semiconductor body
METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE
#2EPITAXIAL SUBSTRATE WITH 2D MATERIAL INTERPOSER, MANUFACTURING METHOD, AND MANUFACTURING ASSEMBLY
#3Gallium and nitrogen bearing dies with improved usage of substrate material
#4Method of manufacturing semiconductor device
#5Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
#6Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
#7Electron beam pumped non-c-plane UV emitters
#8REDUCTION OF WAFER BOW DURING GROWTH OF EPITAXIAL FILMS
#9Electron beam pumped non-c-plane UV emitters
#10Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
#11METHOD FOR FABRICATING SURFACE EMITTING LASER
#12METHOD FOR FABRICATING SURFACE EMITTING LASER
#13Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
#14Semiconductor laser device and method of fabricating the same
#15Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
#16Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth