216125 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AB compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect (In)GaAs with small amount of N
DILUTE NITRIDE LONG-WAVELENGTH EMITTER WITH IMPROVED PERFORMANCE OVER TEMPERATURE
#2Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
#3Light emitting system and method of fabricating and using the same
#4Method of manufacturing vertical-cavity surface emitting laser
#5Vertical-cavity surface emitting laser
#6Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
#7Semiconductor light emitting element and manufacturing method thereof
#8Semiconductor light emitter
#9Semiconductor laser
#10Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array
#11Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
#12Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#13Semiconductor optical amplifier
#14Semiconductor light-emitting device with a surface emitting type
#15Migration enhanced epitaxy fabrication of active regions having quantum wells
#16Semiconductor optical amplifying device, semiconductor optical amplifying system and semiconductor optical integrated element
#17High-Index-Contrast Waveguide
#18Semiconductor optical device
#19Semiconductor surface emitting device
#20Quantum cascade laser
#21Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#22Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
#23Quantum well lasers with strained quantum wells and dilute nitride barriers
#24Semiconductor light emitter
#25Semiconductor optical device
#26High power semiconductor device to output light with low-absorbtive facet window
#27Buried lateral index guided lasers and lasers with lateral current blocking layers
#28POLARIZATION CONTROL IN VERTICAL CAVITY SURFACE EMITTING LASERS USING OFF-AXIS EPITAXY
#29Surface-emitting laser element and laser module using the same
#30Semiconductor optical device
#31Method of fabricating a semiconductor light-emitting device
#32Migration enhanced epitaxy fabrication of active regions having quantum wells
#33Vertical cavity surface emitting laser device having a higher optical output power
#34Vertical-cavity surface-emission type laser diode and fabrication process thereof
#35Surface-emission laser diode operable in the wavelength band of 1.1-1.7 um and optical telecommunication system using such a laser diode
#36Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
#37Multiple GaInNAs quantum wells for high power applications
#38Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells
#39Extended wavelength strained layer lasers having nitrogen disposed therein
#40Semiconductor light emitter
#41Method of forming quantum dots for extended wavelength operation
#42Harmonic generator, method for driving harmonic generator, image-displaying apparatus, image-forming apparatus, optical storage apparatus that employs harmonic generator
#43Method of growing III-V compound semiconductor layer, substrate product, and semiconductor device
#44Optical integrated device
#45Vertical cavity surface emitting semiconductor laser device
#46Laser diode device with nitrogen incorporating barrier
#47Semiconductor laser device having lower threshold current
#48Optical semiconductor device having an active layer containing N
#49Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
#50Semiconductor device having quantum well structure including dual barrier layers, semiconductor laser employing the semiconductor device, and methods of manufacturing the semiconductor device and the semiconductor laser
#51Migration enhanced epitaxy fabrication of quantum wells
#52Semiconductor surface emitting device
#53Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
#54Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
#55Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit
#56Edge emitting laser with circular beam
#57Semiconductor optical device on an indium phosphide substrate for long operating wavelengths
#58Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
#59System for developing a nitrogen-containing active region