216124 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AB compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
Sub-classes:Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region
#2MULTI-WAVELENGTH LIGHT-EMITTING SEMICONDUCTOR DEVICES
#3Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures
#4Migration enhanced epitaxy fabrication of active regions having quantum wells
#5Migration enhanced epitaxy fabrication of active regions having quantum wells
#6Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
#7Optical integrated device
#8Semiconductor laser device having lower threshold current
#9Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
#10Migration enhanced epitaxy fabrication of quantum wells
#11Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
#12Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
#13System for developing a nitrogen-containing active region