216126 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AB compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect In(As)N with small amount of P, or In(As)P with small amount of N
Compact, power-efficient stacked broadband optical emitters
#2Compact, power-efficient stacked broadband optical emitters
#3Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
#4Optical semiconductor device having an active layer containing N