216133 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
Sub-classes:Epitaxial Chip Structure
#2Reducing Auger Recombination In Semiconductor Optical Devices
#3SURFACE-EMITTING LASER DEVICE, DETECTION APPARATUS, AND MOBILE OBJECT
#4SEMICONDUCTOR OPTICAL DEVICE
#5HIGH-EFFICIENCY ACTIVE LAYER AND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PREPARATION METHOD
#6RADIATION EMITTER AND METHOD OF FABRICATION A RADIATION EMITTER
#7Optical device and method of forming the same
#8BROADENED SPECTRUM LASER DIODE FOR DISPLAY DEVICE
#9Reducing Auger Recombination In Semiconductor Optical Devices
#10RIDGE TYPE SEMICONDUCTOR OPTICAL DEVICE
#11VERTICAL CAVITY SURFACE-EMITTING LASER
#12Tunable Light Source
#13STRAIN-ENGINEERED CLADDING LAYER FOR OPTIMIZED ACTIVE REGION STRAIN AND IMPROVED LASER DIODE PERFORMANCE
#14GAIN MEDIUM STRUCTURE FOR SEMICONDUCTOR OPTICAL AMPLIFIER WITH HIGH SATURATION POWER
#15Optical semiconductor device
#16BROADENED SPECTRUM LASER DIODE FOR DISPLAY DEVICE
#17Broadened spectrum laser diode for display device
#18Structure comprising a strained semiconductor layer on a heat sink
#19Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain
#20Mid-infrared vertical cavity laser
#21Nitride light emitter
#22Edge-emitting semiconductor laser and method for operating a semiconductor laser
#23Mid-infrared vertical cavity laser
#24Semiconductor laser with tensile strained InAlAs electron blocker for 1310 nanometer high temperature operation
#25Optical semiconductor device, optical subassembly, and optical module
#26Laserdiode
#27Optical logic gates
#28Edge-emitting semiconductor laser and method for operating a semiconductor laser
#29Interband cascade light emitting devices
#30Long wavelength quantum cascade lasers based on high strain composition
#31Semiconductor device and fabrication method
#32Tunable semiconductor laser based on reconstruction-equivalent chirp and series mode or series and parallel hybrid integration, and preparation thereof
#33Electro-optical component
#34Semiconductor device and fabrication method
#35Wavelength stabilized diode laser
#36Enhanced optical gain and lasing in indirect gap semiconductor thin films and nanostructures
#37Electro-optical component
#38Surface-emitting laser device, surface-emitting laser array, optical scanning apparatus and image forming apparatus
#39Semiconductor light emitting device and method for manufacturing the same
#40Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
#41Optical semiconductor device
#42Quantum cascade laser design with stepped well active region
#43Quantum cascade structures on metamorphic buffer layer structures
#44NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
#45Substrate for epitaxial growth
#46Optoelectronic device with a wide bandgap and method of making same
#47Surface-emitting laser device and surface-emitting laser array including same
#48HIGH SPEED VERTICAL-CAVITY SURFACE-EMITTING LASER
#49Laser emission systems, heterostructure and active zone having coupled quantum-wells, and use for 1.55 mm laser emission
#50Surface emitting laser diode, optical scanning apparatus and image forming apparatus
#51Layer assembly
#52GaN-based semiconductor light emitting device and the method for making the same
#53Engineering emission wavelengths in laser and light emitting devices
#54Surface-emitting laser device, surface-emitting laser array, optical scanning apparatus and image forming apparatus
#55QUANTUM DOT LASER DIODE AND METHOD OF FABRICATING THE SAME
#56Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
#57Semiconductor laser device and method for manufacturing the same
#58Optical device and method for manufacturing the same
#59Optical amplifier and method for suppressing polarization dependent gain of optical amplifier
#60Strain modulated nanostructures for optoelectronic devices and associated systems and methods
#61Semiconductor electroluminescent device with a multiple-quantum well layer formed therein
#62Quantum dot laser diode and method of fabricating the same
#63Surface-emitting laser device and surface-emitting laser array including same
#64SEMICONDUCTOR LASER DEVICE AND DISPLAY
#65TWO-WAVELENGTH SEMICONDUCTOR LASER DEVICE
#66SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME
#67Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#68SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME
#69Semiconductor light emitting device
#70SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
#71Migration enhanced epitaxy fabrication of active regions having quantum wells
#72OPTICAL SEMICONDUCTOR DEVICE
#73Optical measurement instrument for living body semiconductor laser installation for living body light measuring device
#74Semiconductor optoelectronic device and method of fabricating the same
#75Active layer of laser diode
#76Surface-emitting laser device and surface-emitting laser array including same
#77Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#78SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME
#79Semiconductor laser device
#80Migration enhanced epitaxy fabrication of active regions having quantum wells
#81Semiconductor light-emitting device
#82Method for forming quantum dots by alternate growth process
#83Vertical-cavity surface-emission type laser diode and fabrication process thereof
#84Optical semiconductor device
#85Semiconductor quantum well devices and methods of making the same
#86Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
#87Extended wavelength strained layer lasers having nitrogen disposed therein
#88Method of forming quantum dots for extended wavelength operation
#89Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
#90Semiconductor laser element having tensile-strained quantum-well active layer
#91Process for manufacturing semiconductor devices and related semiconductor device
#92Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
#93Migration enhanced epitaxy fabrication of quantum wells
#94Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
#95Semiconductor optical devices and optical modules
#96Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
#97Twin waveguide based design for photonic integrated circuits
#98Semiconductor optical device on an indium phosphide substrate for long operating wavelengths
#99System for developing a nitrogen-containing active region
#100Semiconductor laser device and optical disk recording and reproducing apparatus
#101Semiconductor light emitting element and method for fabricating the same
#102Strained and strain control regions in optical devices
#103Strained and strain control regions in optical devices
#104Strained and strain control regions in optical devices
#105Method of strain engineering and related optical device using a gallium and nitrogen containing active region
#106Wavelength stabilized diode laser
#107Method and structure for laser devices using optical blocking regions