216135 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
LASER DIODES AND STRAIN COMPENSATED QUANTUM DOT LAYERS
#2WAVELENGTH-VARIABLE LASER
#3SEMICONDUCTOR LASERS
#4WAVELENGTH-VARIABLE LASER
#5Wavelength-variable laser
#6Strained Quantum Well Structure, Optical Semiconductor Device, and Semiconductor Laser
#7Monolithically integrated mid-infrared two-dimensional optical phased array
#8Quantum cascade laser
#9QUANTUM DOT LASERS AND METHODS FOR MAKING THE SAME
#10Wavelength-variable laser
#11Wavelength-variable laser
#12Semiconductor devices and methods for producing the same
#13Semiconductor laser diode
#14Quantum cascade laser with monolithically integrated passive waveguide
#15Wavelength-variable laser
#16Trenches for increasing a quantity of reliable chips produced from a wafer
#17Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same
#18Structure for reducing compound semiconductor wafer distortion
#19Structure for reducing compound semiconductor wafer distortion
#20Wavelength-variable laser
#21Semiconductor laser diode having multi-quantum well structure
#22Light emitting element
#23Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same
#24Semiconductor device and fabrication method
#25Optical semiconductor device, semiconductor laser module, and optical fiber amplifier
#26Semiconductor device and fabrication method
#27Wavelength sweepable laser source
#28Quantum cascade laser structure
#29Laser emission systems, heterostructure and active zone having coupled quantum-wells, and use for 1.55 mm laser emission
#30Optical device capable of minimizing output variation due to feedback light, optical scanning apparatus, and image forming apparatus
#31Optoelectronic Devices Including Compound Valence-Band Quantum Well Structures
#32Strain balanced laser diode
#33TERAHERTZ QUANTUM CASCADE LASERS (QCLS)
#34Surface-emitting laser comprising emission region having peripheral portion with anisotropy in two perpendicular directions, and surface-emitting laser array, optical scanning apparatus and image forming apparatus including the same
#35GaN-based laser diodes with misfit dislocations displaced from the active region
#36Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes
#37Superlattice structure and method for making the same
#38Optical semiconductor device and pumping light source for optical fiber amplifier
#39Method to form semiconductor laser diode
#40Optical semiconductor device and method of manufacturing optical semiconductor device
#41SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND OPTICAL APPARATUS
#42Quantum cascade laser
#43Semiconductor light-emitting device, optical module, transmitter, and optical communication system
#44Laser diode and method for fabricating same
#45Semiconductor light emitter
#46Semiconductor laser
#47Surface emitting laser device
#48Optical device having a quantum-dot structure
#49Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
#50Semiconductor light emitting device
#51Semiconductor laser device
#52Semiconductor light emitting device
#53Nitride-based semiconductor light-emitting device
#54Migration enhanced epitaxy fabrication of active regions having quantum wells
#55Quantum cascade laser structure
#56Semiconductor light emitting device
#57High efficiency intersubband semiconductor lasers
#58Semiconductor light-emitting element and method of producing the same
#59Semiconductor light emitting device and fabrication method for semiconductor light emitting device
#60Surface emitting laser device
#61III-nitride compound semiconductor light emitting device
#62Laser diode and method for fabricating same
#63Semiconductor optoelectronic device and method of fabricating the same
#64Quantum well lasers with strained quantum wells and dilute nitride barriers
#65High efficiency intersubband semiconductor lasers
#66Superluminescent diode and method of manufacturing the same
#67Red light laser
#68Semiconductor light emitter
#69Optically Pumped Semiconductor Devices for the Generation of Radiation, Their Production as Well as Methods for the Strain Compensation in the Layer Successions used Within
#70Semiconductor laser device
#71Semiconductor laser diode and integrated semiconductor optical waveguide device
#72Optical semiconductor device
#73High power vertical external cavity surface emitting laser
#74High-power infrared semiconductor diode light emitting device
#75Semiconductor laser device and optical fiber amplifier
#76Migration enhanced epitaxy fabrication of active regions having quantum wells
#77External cavity surface emitting laser device having a plurality of quantum wells
#78Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer
#79Semiconductor light-emitting element and method of producing the same
#80Wide tuneable laser sources
#81Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells
#82Extended wavelength strained layer lasers having nitrogen disposed therein
#83Semiconductor light emitter
#84Quantum cascade laser structure
#85Type II quantum well mid-infrared optoelectronic devices
#86Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
#87Migration enhanced epitaxy fabrication of quantum wells
#88Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
#89Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
#90Single-mode laser diode using strain-compensated multi-quantum-wells and method for manufacturing the same
#91System for developing a nitrogen-containing active region
#92Semiconductor laser device and optical fiber amplifier
#93Strained and strain control regions in optical devices
#94Strained and strain control regions in optical devices
#95Method of strain engineering and related optical device using a gallium and nitrogen containing active region
#96Method of strain engineering and related optical device using a gallium and nitrogen containing active region